Продукція > ALPHA & OMEGA SEMICONDUCTOR > Всі товари виробника ALPHA & OMEGA SEMICONDUCTOR (4278) > Сторінка 28 з 72
Фото | Назва | Виробник | Інформація |
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AOK75B60D1 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 600V 150A 600000mW 3-Pin(3+Tab) TO-247 Tube |
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AOK75B60D1 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 75A; 300W; TO247; Eoff: 1.3mJ; Eon: 3.7mJ Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 75A Power dissipation: 300W Case: TO247 Gate-emitter voltage: ±20V Pulsed collector current: 290A Mounting: THT Gate charge: 118nC Kind of package: tube Turn-on time: 104ns Turn-off time: 155ns Collector-emitter saturation voltage: 1.72V Turn-off switching energy: 1.3mJ Turn-on switching energy: 3.7mJ кількість в упаковці: 1 шт |
на замовлення 145 шт: термін постачання 7-14 дні (днів) |
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AOK75B65H1 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 75A; 278W; TO247; Eoff: 2.04mJ; Eon: 3.77mJ Turn-off time: 319ns Gate-emitter voltage: ±30V Collector-emitter saturation voltage: 1.85V Collector current: 75A Turn-off switching energy: 2.04mJ Mounting: THT Turn-on switching energy: 3.77mJ Collector-emitter voltage: 650V Power dissipation: 278W Gate charge: 109nC Pulsed collector current: 225A Type of transistor: IGBT Turn-on time: 140ns Kind of package: tube Case: TO247 |
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AOK75B65H1 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 650V 150A 556W |
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AOK75B65H1 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 75A; 278W; TO247; Eoff: 2.04mJ; Eon: 3.77mJ Turn-off time: 319ns Gate-emitter voltage: ±30V Collector-emitter saturation voltage: 1.85V Collector current: 75A Turn-off switching energy: 2.04mJ Mounting: THT Turn-on switching energy: 3.77mJ Collector-emitter voltage: 650V Power dissipation: 278W Gate charge: 109nC Pulsed collector current: 225A Type of transistor: IGBT Turn-on time: 140ns Kind of package: tube Case: TO247 кількість в упаковці: 1 шт |
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AOK8N80 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 800V 7.4A 3-Pin(3+Tab) TO-247 |
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AOK8N80L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 800V 7.4A 3-Pin(3+Tab) TO-247 |
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AOK9N90 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 900V 9A 3-Pin(3+Tab) TO-247 Tube |
на замовлення 9600 шт: термін постачання 21-31 дні (днів) |
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AOKS30B60D1 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 600V 60A 208mW 3-Pin(3+Tab) TO-247 Tube |
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AOKS40B65H2AL | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 40A; 105W; TO247; Eoff: 0.54mJ; Eon: 1.17mJ Turn-off time: 151ns Gate-emitter voltage: ±30V Collector-emitter saturation voltage: 2.05V Collector current: 40A Turn-off switching energy: 0.54mJ Mounting: THT Turn-on switching energy: 1.17mJ Collector-emitter voltage: 650V Power dissipation: 105W Gate charge: 61nC Pulsed collector current: 120A Type of transistor: IGBT Turn-on time: 64ns Kind of package: tube Case: TO247 |
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AOKS40B65H2AL | Alpha & Omega Semiconductor | AOKS40B65H2AL |
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AOKS40B65H2AL | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 40A; 105W; TO247; Eoff: 0.54mJ; Eon: 1.17mJ Turn-off time: 151ns Gate-emitter voltage: ±30V Collector-emitter saturation voltage: 2.05V Collector current: 40A Turn-off switching energy: 0.54mJ Mounting: THT Turn-on switching energy: 1.17mJ Collector-emitter voltage: 650V Power dissipation: 105W Gate charge: 61nC Pulsed collector current: 120A Type of transistor: IGBT Turn-on time: 64ns Kind of package: tube Case: TO247 кількість в упаковці: 1 шт |
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AOL1240 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 40V 69A 3-Pin Ultra SO T/R |
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AOL1240 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 40V 69A 3-Pin Ultra SO T/R |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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AOL1242 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 40V 69A 3-Pin Ultra SO T/R |
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AOL1242 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 40V 69A 3-Pin Ultra SO T/R |
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AOL1404 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 20V 45A 3-Pin Ultra SO T/R |
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AOL1404G | Alpha & Omega Semiconductor | Trans MOSFET N-CH 20V 46A 3-Pin Ultra SO T/R |
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AOL1404G | Alpha & Omega Semiconductor | Trans MOSFET N-CH 20V 46A 3-Pin Ultra SO T/R |
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AOL1404G | ALPHA & OMEGA SEMICONDUCTOR | AOL1404G SMD N channel transistors |
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AOL1413 | Alpha & Omega Semiconductor | Trans MOSFET P-CH 30V 38A 3-Pin Ultra SO |
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AOL1414 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 30V 85A 3-Pin Ultra SO |
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AOL1414 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 30V 85A 3-Pin Ultra SO |
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AOL1426 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 30V 10A 3-Pin Ultra SO |
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AOL1426 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 30V 10A 3-Pin Ultra SO |
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AOL1428A | Alpha & Omega Semiconductor | Trans MOSFET N-CH 30V 49A 3-Pin Ultra SO T/R |
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AOL1448 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 30V 11A 3-Pin Ultra SO |
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AOL1448 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 30V 11A 3-Pin Ultra SO |
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AOL1454 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 40V 12A 3-Pin Ultra SO T/R |
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AOL1454 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 48A; 30W; UltraSO8 Polarisation: unipolar Case: UltraSO8 Mounting: SMD Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Power dissipation: 30W Gate-source voltage: ±20V Type of transistor: N-MOSFET Drain-source voltage: 40V Drain current: 48A On-state resistance: 10mΩ Gate charge: 22nC |
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AOL1454G | Alpha & Omega Semiconductor | N-Channel MOSFET |
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AOL1454G | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 46A; 20.5W; UltraSO8 Polarisation: unipolar Case: UltraSO8 Power dissipation: 20.5W Gate charge: 20nC Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Drain-source voltage: 40V Drain current: 46A On-state resistance: 5.9mΩ Type of transistor: N-MOSFET |
на замовлення 1386 шт: термін постачання 21-30 дні (днів) |
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AOL1454G | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 46A; 20.5W; UltraSO8 Polarisation: unipolar Case: UltraSO8 Power dissipation: 20.5W Gate charge: 20nC Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Drain-source voltage: 40V Drain current: 46A On-state resistance: 5.9mΩ Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
на замовлення 1386 шт: термін постачання 7-14 дні (днів) |
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AOL1482 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 20A; 37W; UltraSO8 Mounting: SMD Kind of channel: enhanced Power dissipation: 37W Gate-source voltage: ±20V Type of transistor: N-MOSFET Drain-source voltage: 100V Drain current: 20A On-state resistance: 37mΩ Gate charge: 34nC Case: UltraSO8 Polarisation: unipolar |
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AOL1482 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 100V 28A 3-Pin Ultra SO |
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AOL1718 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 30V 69A 3-Pin Ultra SO T/R |
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AOM015V65X2 | Alpha & Omega Semiconductor | AOM015V65X2 |
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AOM015V75X2Q | Alpha & Omega Semiconductor | Silicon Carbide (SiC) MOSFETs |
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AOM015V75X2Q | Alpha & Omega Semiconductor | Silicon Carbide (SiC) MOSFETs Automotive AEC-Q101 |
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AOM020V120X2 | Alpha & Omega Semiconductor | AOM020V120X2 |
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AOM033V120X2 | Alpha & Omega Semiconductor | SiC Silicon Carbide Power MOSFET |
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AOM033V120X2Q | Alpha & Omega Semiconductor | SiC Silicon Carbide Power MOSFET |
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AOM065V120X2 | Alpha & Omega Semiconductor | SiC Silicon Carbide Power MOSFET |
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AOM065V120X2Q | Alpha & Omega Semiconductor | SiC Silicon Carbide Power MOSFET |
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AOM065V120X2Q | Alpha & Omega Semiconductor | SiC Silicon Carbide Power MOSFET |
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AOMU66414Q | Alpha & Omega Semiconductor | N-Channel MOSFET |
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AON1605 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -0.55A; 550mW; DFN3 Mounting: SMD Power dissipation: 0.55W Polarisation: unipolar Gate charge: 0.75nC Kind of channel: enhanced Gate-source voltage: ±8V Case: DFN3 Drain-source voltage: -20V Drain current: -0.55A Type of transistor: P-MOSFET |
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AON1605 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -0.55A; 550mW; DFN3 Mounting: SMD Power dissipation: 0.55W Polarisation: unipolar Gate charge: 0.75nC Kind of channel: enhanced Gate-source voltage: ±8V Case: DFN3 Drain-source voltage: -20V Drain current: -0.55A Type of transistor: P-MOSFET кількість в упаковці: 10000 шт |
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AON1606 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 20V 0.7A 3-Pin DFN T/R |
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AON1606 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 0.55A; 0.55W; DFN3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.55A Power dissipation: 0.55W Case: DFN3 Gate-source voltage: ±8V On-state resistance: 275mΩ Mounting: SMD Gate charge: 0.85nC Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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AON1606 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 20V 0.7A 3-Pin DFN T/R |
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AON1606 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 0.55A; 0.55W; DFN3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.55A Power dissipation: 0.55W Case: DFN3 Gate-source voltage: ±8V On-state resistance: 275mΩ Mounting: SMD Gate charge: 0.85nC Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 5 шт |
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AON1611 | Alpha & Omega Semiconductor | Trans MOSFET P-CH 20V 4A 6-Pin DFN EP |
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AON1620 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 12V 4A 6-Pin DFN EP |
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AON1634 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3A; 1.15W; DFN1,6x1,6A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 3A Power dissipation: 1.15W Case: DFN1,6x1,6A Gate-source voltage: ±12V On-state resistance: 54mΩ Mounting: SMD Gate charge: 5.7nC Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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AON1634 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3A; 1.15W; DFN1,6x1,6A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 3A Power dissipation: 1.15W Case: DFN1,6x1,6A Gate-source voltage: ±12V On-state resistance: 54mΩ Mounting: SMD Gate charge: 5.7nC Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 5 шт |
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AON1634 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 30V 4A 6-Pin DFN EP |
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AON2240 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 40V 8A 6-Pin DFN-B EP T/R |
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AON2240 | ALPHA & OMEGA SEMICONDUCTOR | AON2240 SMD N channel transistors |
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AON2260 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 60V 6A 6-Pin DFN-B EP T/R |
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AOK75B60D1 |
Виробник: Alpha & Omega Semiconductor
Trans IGBT Chip N-CH 600V 150A 600000mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 600V 150A 600000mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
AOK75B60D1 |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 300W; TO247; Eoff: 1.3mJ; Eon: 3.7mJ
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 300W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 290A
Mounting: THT
Gate charge: 118nC
Kind of package: tube
Turn-on time: 104ns
Turn-off time: 155ns
Collector-emitter saturation voltage: 1.72V
Turn-off switching energy: 1.3mJ
Turn-on switching energy: 3.7mJ
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 300W; TO247; Eoff: 1.3mJ; Eon: 3.7mJ
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 300W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 290A
Mounting: THT
Gate charge: 118nC
Kind of package: tube
Turn-on time: 104ns
Turn-off time: 155ns
Collector-emitter saturation voltage: 1.72V
Turn-off switching energy: 1.3mJ
Turn-on switching energy: 3.7mJ
кількість в упаковці: 1 шт
на замовлення 145 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
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1+ | 491.45 грн |
3+ | 346.69 грн |
9+ | 315.73 грн |
240+ | 314.01 грн |
AOK75B65H1 |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 278W; TO247; Eoff: 2.04mJ; Eon: 3.77mJ
Turn-off time: 319ns
Gate-emitter voltage: ±30V
Collector-emitter saturation voltage: 1.85V
Collector current: 75A
Turn-off switching energy: 2.04mJ
Mounting: THT
Turn-on switching energy: 3.77mJ
Collector-emitter voltage: 650V
Power dissipation: 278W
Gate charge: 109nC
Pulsed collector current: 225A
Type of transistor: IGBT
Turn-on time: 140ns
Kind of package: tube
Case: TO247
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 278W; TO247; Eoff: 2.04mJ; Eon: 3.77mJ
Turn-off time: 319ns
Gate-emitter voltage: ±30V
Collector-emitter saturation voltage: 1.85V
Collector current: 75A
Turn-off switching energy: 2.04mJ
Mounting: THT
Turn-on switching energy: 3.77mJ
Collector-emitter voltage: 650V
Power dissipation: 278W
Gate charge: 109nC
Pulsed collector current: 225A
Type of transistor: IGBT
Turn-on time: 140ns
Kind of package: tube
Case: TO247
товар відсутній
AOK75B65H1 |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 278W; TO247; Eoff: 2.04mJ; Eon: 3.77mJ
Turn-off time: 319ns
Gate-emitter voltage: ±30V
Collector-emitter saturation voltage: 1.85V
Collector current: 75A
Turn-off switching energy: 2.04mJ
Mounting: THT
Turn-on switching energy: 3.77mJ
Collector-emitter voltage: 650V
Power dissipation: 278W
Gate charge: 109nC
Pulsed collector current: 225A
Type of transistor: IGBT
Turn-on time: 140ns
Kind of package: tube
Case: TO247
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 278W; TO247; Eoff: 2.04mJ; Eon: 3.77mJ
Turn-off time: 319ns
Gate-emitter voltage: ±30V
Collector-emitter saturation voltage: 1.85V
Collector current: 75A
Turn-off switching energy: 2.04mJ
Mounting: THT
Turn-on switching energy: 3.77mJ
Collector-emitter voltage: 650V
Power dissipation: 278W
Gate charge: 109nC
Pulsed collector current: 225A
Type of transistor: IGBT
Turn-on time: 140ns
Kind of package: tube
Case: TO247
кількість в упаковці: 1 шт
товар відсутній
AOK8N80 |
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 800V 7.4A 3-Pin(3+Tab) TO-247
Trans MOSFET N-CH 800V 7.4A 3-Pin(3+Tab) TO-247
товар відсутній
AOK8N80L |
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 800V 7.4A 3-Pin(3+Tab) TO-247
Trans MOSFET N-CH 800V 7.4A 3-Pin(3+Tab) TO-247
товар відсутній
AOK9N90 |
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 900V 9A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH 900V 9A 3-Pin(3+Tab) TO-247 Tube
на замовлення 9600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
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3+ | 111.11 грн |
AOKS30B60D1 |
Виробник: Alpha & Omega Semiconductor
Trans IGBT Chip N-CH 600V 60A 208mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 600V 60A 208mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
AOKS40B65H2AL |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 105W; TO247; Eoff: 0.54mJ; Eon: 1.17mJ
Turn-off time: 151ns
Gate-emitter voltage: ±30V
Collector-emitter saturation voltage: 2.05V
Collector current: 40A
Turn-off switching energy: 0.54mJ
Mounting: THT
Turn-on switching energy: 1.17mJ
Collector-emitter voltage: 650V
Power dissipation: 105W
Gate charge: 61nC
Pulsed collector current: 120A
Type of transistor: IGBT
Turn-on time: 64ns
Kind of package: tube
Case: TO247
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 105W; TO247; Eoff: 0.54mJ; Eon: 1.17mJ
Turn-off time: 151ns
Gate-emitter voltage: ±30V
Collector-emitter saturation voltage: 2.05V
Collector current: 40A
Turn-off switching energy: 0.54mJ
Mounting: THT
Turn-on switching energy: 1.17mJ
Collector-emitter voltage: 650V
Power dissipation: 105W
Gate charge: 61nC
Pulsed collector current: 120A
Type of transistor: IGBT
Turn-on time: 64ns
Kind of package: tube
Case: TO247
товар відсутній
AOKS40B65H2AL |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 105W; TO247; Eoff: 0.54mJ; Eon: 1.17mJ
Turn-off time: 151ns
Gate-emitter voltage: ±30V
Collector-emitter saturation voltage: 2.05V
Collector current: 40A
Turn-off switching energy: 0.54mJ
Mounting: THT
Turn-on switching energy: 1.17mJ
Collector-emitter voltage: 650V
Power dissipation: 105W
Gate charge: 61nC
Pulsed collector current: 120A
Type of transistor: IGBT
Turn-on time: 64ns
Kind of package: tube
Case: TO247
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 105W; TO247; Eoff: 0.54mJ; Eon: 1.17mJ
Turn-off time: 151ns
Gate-emitter voltage: ±30V
Collector-emitter saturation voltage: 2.05V
Collector current: 40A
Turn-off switching energy: 0.54mJ
Mounting: THT
Turn-on switching energy: 1.17mJ
Collector-emitter voltage: 650V
Power dissipation: 105W
Gate charge: 61nC
Pulsed collector current: 120A
Type of transistor: IGBT
Turn-on time: 64ns
Kind of package: tube
Case: TO247
кількість в упаковці: 1 шт
товар відсутній
AOL1240 |
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 40V 69A 3-Pin Ultra SO T/R
Trans MOSFET N-CH 40V 69A 3-Pin Ultra SO T/R
товар відсутній
AOL1240 |
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 40V 69A 3-Pin Ultra SO T/R
Trans MOSFET N-CH 40V 69A 3-Pin Ultra SO T/R
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 38.08 грн |
AOL1242 |
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 40V 69A 3-Pin Ultra SO T/R
Trans MOSFET N-CH 40V 69A 3-Pin Ultra SO T/R
товар відсутній
AOL1242 |
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 40V 69A 3-Pin Ultra SO T/R
Trans MOSFET N-CH 40V 69A 3-Pin Ultra SO T/R
товар відсутній
AOL1404 |
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 20V 45A 3-Pin Ultra SO T/R
Trans MOSFET N-CH 20V 45A 3-Pin Ultra SO T/R
товар відсутній
AOL1404G |
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 20V 46A 3-Pin Ultra SO T/R
Trans MOSFET N-CH 20V 46A 3-Pin Ultra SO T/R
товар відсутній
AOL1404G |
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 20V 46A 3-Pin Ultra SO T/R
Trans MOSFET N-CH 20V 46A 3-Pin Ultra SO T/R
товар відсутній
AOL1413 |
Виробник: Alpha & Omega Semiconductor
Trans MOSFET P-CH 30V 38A 3-Pin Ultra SO
Trans MOSFET P-CH 30V 38A 3-Pin Ultra SO
товар відсутній
AOL1414 |
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 30V 85A 3-Pin Ultra SO
Trans MOSFET N-CH 30V 85A 3-Pin Ultra SO
товар відсутній
AOL1414 |
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 30V 85A 3-Pin Ultra SO
Trans MOSFET N-CH 30V 85A 3-Pin Ultra SO
товар відсутній
AOL1426 |
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 30V 10A 3-Pin Ultra SO
Trans MOSFET N-CH 30V 10A 3-Pin Ultra SO
товар відсутній
AOL1426 |
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 30V 10A 3-Pin Ultra SO
Trans MOSFET N-CH 30V 10A 3-Pin Ultra SO
товар відсутній
AOL1428A |
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 30V 49A 3-Pin Ultra SO T/R
Trans MOSFET N-CH 30V 49A 3-Pin Ultra SO T/R
товар відсутній
AOL1448 |
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 30V 11A 3-Pin Ultra SO
Trans MOSFET N-CH 30V 11A 3-Pin Ultra SO
товар відсутній
AOL1448 |
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 30V 11A 3-Pin Ultra SO
Trans MOSFET N-CH 30V 11A 3-Pin Ultra SO
товар відсутній
AOL1454 |
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 40V 12A 3-Pin Ultra SO T/R
Trans MOSFET N-CH 40V 12A 3-Pin Ultra SO T/R
товар відсутній
AOL1454 |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 48A; 30W; UltraSO8
Polarisation: unipolar
Case: UltraSO8
Mounting: SMD
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Power dissipation: 30W
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Drain current: 48A
On-state resistance: 10mΩ
Gate charge: 22nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 48A; 30W; UltraSO8
Polarisation: unipolar
Case: UltraSO8
Mounting: SMD
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Power dissipation: 30W
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Drain current: 48A
On-state resistance: 10mΩ
Gate charge: 22nC
товар відсутній
AOL1454G |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 46A; 20.5W; UltraSO8
Polarisation: unipolar
Case: UltraSO8
Power dissipation: 20.5W
Gate charge: 20nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Drain-source voltage: 40V
Drain current: 46A
On-state resistance: 5.9mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 46A; 20.5W; UltraSO8
Polarisation: unipolar
Case: UltraSO8
Power dissipation: 20.5W
Gate charge: 20nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Drain-source voltage: 40V
Drain current: 46A
On-state resistance: 5.9mΩ
Type of transistor: N-MOSFET
на замовлення 1386 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 51.1 грн |
18+ | 20.13 грн |
21+ | 17.68 грн |
52+ | 16.03 грн |
100+ | 15.82 грн |
143+ | 15.17 грн |
500+ | 14.81 грн |
AOL1454G |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 46A; 20.5W; UltraSO8
Polarisation: unipolar
Case: UltraSO8
Power dissipation: 20.5W
Gate charge: 20nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Drain-source voltage: 40V
Drain current: 46A
On-state resistance: 5.9mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 46A; 20.5W; UltraSO8
Polarisation: unipolar
Case: UltraSO8
Power dissipation: 20.5W
Gate charge: 20nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Drain-source voltage: 40V
Drain current: 46A
On-state resistance: 5.9mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
на замовлення 1386 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 61.32 грн |
11+ | 25.08 грн |
13+ | 21.22 грн |
52+ | 19.24 грн |
100+ | 18.98 грн |
143+ | 18.2 грн |
500+ | 17.77 грн |
AOL1482 |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; 37W; UltraSO8
Mounting: SMD
Kind of channel: enhanced
Power dissipation: 37W
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 20A
On-state resistance: 37mΩ
Gate charge: 34nC
Case: UltraSO8
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; 37W; UltraSO8
Mounting: SMD
Kind of channel: enhanced
Power dissipation: 37W
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 20A
On-state resistance: 37mΩ
Gate charge: 34nC
Case: UltraSO8
Polarisation: unipolar
товар відсутній
AOL1482 |
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 100V 28A 3-Pin Ultra SO
Trans MOSFET N-CH 100V 28A 3-Pin Ultra SO
товар відсутній
AOL1718 |
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 30V 69A 3-Pin Ultra SO T/R
Trans MOSFET N-CH 30V 69A 3-Pin Ultra SO T/R
товар відсутній
AOM015V75X2Q |
Виробник: Alpha & Omega Semiconductor
Silicon Carbide (SiC) MOSFETs Automotive AEC-Q101
Silicon Carbide (SiC) MOSFETs Automotive AEC-Q101
товар відсутній
AON1605 |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.55A; 550mW; DFN3
Mounting: SMD
Power dissipation: 0.55W
Polarisation: unipolar
Gate charge: 0.75nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Case: DFN3
Drain-source voltage: -20V
Drain current: -0.55A
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.55A; 550mW; DFN3
Mounting: SMD
Power dissipation: 0.55W
Polarisation: unipolar
Gate charge: 0.75nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Case: DFN3
Drain-source voltage: -20V
Drain current: -0.55A
Type of transistor: P-MOSFET
товар відсутній
AON1605 |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.55A; 550mW; DFN3
Mounting: SMD
Power dissipation: 0.55W
Polarisation: unipolar
Gate charge: 0.75nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Case: DFN3
Drain-source voltage: -20V
Drain current: -0.55A
Type of transistor: P-MOSFET
кількість в упаковці: 10000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.55A; 550mW; DFN3
Mounting: SMD
Power dissipation: 0.55W
Polarisation: unipolar
Gate charge: 0.75nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Case: DFN3
Drain-source voltage: -20V
Drain current: -0.55A
Type of transistor: P-MOSFET
кількість в упаковці: 10000 шт
товар відсутній
AON1606 |
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 20V 0.7A 3-Pin DFN T/R
Trans MOSFET N-CH 20V 0.7A 3-Pin DFN T/R
товар відсутній
AON1606 |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.55A; 0.55W; DFN3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.55A
Power dissipation: 0.55W
Case: DFN3
Gate-source voltage: ±8V
On-state resistance: 275mΩ
Mounting: SMD
Gate charge: 0.85nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.55A; 0.55W; DFN3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.55A
Power dissipation: 0.55W
Case: DFN3
Gate-source voltage: ±8V
On-state resistance: 275mΩ
Mounting: SMD
Gate charge: 0.85nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
AON1606 |
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 20V 0.7A 3-Pin DFN T/R
Trans MOSFET N-CH 20V 0.7A 3-Pin DFN T/R
товар відсутній
AON1606 |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.55A; 0.55W; DFN3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.55A
Power dissipation: 0.55W
Case: DFN3
Gate-source voltage: ±8V
On-state resistance: 275mΩ
Mounting: SMD
Gate charge: 0.85nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.55A; 0.55W; DFN3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.55A
Power dissipation: 0.55W
Case: DFN3
Gate-source voltage: ±8V
On-state resistance: 275mΩ
Mounting: SMD
Gate charge: 0.85nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5 шт
товар відсутній
AON1634 |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3A; 1.15W; DFN1,6x1,6A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3A
Power dissipation: 1.15W
Case: DFN1,6x1,6A
Gate-source voltage: ±12V
On-state resistance: 54mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3A; 1.15W; DFN1,6x1,6A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3A
Power dissipation: 1.15W
Case: DFN1,6x1,6A
Gate-source voltage: ±12V
On-state resistance: 54mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
AON1634 |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3A; 1.15W; DFN1,6x1,6A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3A
Power dissipation: 1.15W
Case: DFN1,6x1,6A
Gate-source voltage: ±12V
On-state resistance: 54mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3A; 1.15W; DFN1,6x1,6A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3A
Power dissipation: 1.15W
Case: DFN1,6x1,6A
Gate-source voltage: ±12V
On-state resistance: 54mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 5 шт
товар відсутній
AON2240 |
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 40V 8A 6-Pin DFN-B EP T/R
Trans MOSFET N-CH 40V 8A 6-Pin DFN-B EP T/R
товар відсутній
AON2260 |
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 60V 6A 6-Pin DFN-B EP T/R
Trans MOSFET N-CH 60V 6A 6-Pin DFN-B EP T/R
товар відсутній