Продукція > CAMBRIDGE GAN DEVICES > Всі товари виробника CAMBRIDGE GAN DEVICES (8) > Сторінка 1 з 1
| Фото | Назва | Виробник | Інформація |
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CGD65A055S2-T07 | Cambridge GaN Devices |
 Description: 650V GAN HEMT, 55MOHM, DFN8X8. WPackaging: Tape & Reel (TR) Package / Case: 16-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Rds On (Max) @ Id, Vgs: 77mOhm @ 2.2A, 12V FET Feature: Current Sensing Vgs(th) (Max) @ Id: 4.2V @ 10mA Supplier Device Package: 16-DFN (8x8) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): +20V, -1V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 12 V |
товар відсутній |
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CGD65A055S2-T07 | Cambridge GaN Devices |
Description: 650V GAN HEMT, 55MOHM, DFN8X8. W Packaging: Cut Tape (CT) Package / Case: 16-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Rds On (Max) @ Id, Vgs: 77mOhm @ 2.2A, 12V FET Feature: Current Sensing Vgs(th) (Max) @ Id: 4.2V @ 10mA Supplier Device Package: 16-DFN (8x8) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): +20V, -1V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 12 V |
на замовлення 741 шт: термін постачання 21-31 дні (днів) |
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CGD65A130S2-T13 | Cambridge GaN Devices |
Description: 650V GAN HEMT, 130MOHM, DFN8X8. Packaging: Tape & Reel (TR) Package / Case: 16-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 182mOhm @ 900mA, 12V FET Feature: Current Sensing Vgs(th) (Max) @ Id: 4.2V @ 4.2mA Supplier Device Package: 16-DFN (8x8) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): +20V, -1V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 12 V |
товар відсутній |
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CGD65A130S2-T13 | Cambridge GaN Devices |
Description: 650V GAN HEMT, 130MOHM, DFN8X8. Packaging: Cut Tape (CT) Package / Case: 16-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 182mOhm @ 900mA, 12V FET Feature: Current Sensing Vgs(th) (Max) @ Id: 4.2V @ 4.2mA Supplier Device Package: 16-DFN (8x8) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): +20V, -1V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 12 V |
на замовлення 3352 шт: термін постачання 21-31 дні (днів) |
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CGD65B130S2-T13 | Cambridge GaN Devices |
Description: 650V GAN HEMT, 130MOHM, DFN5X6. Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 182mOhm @ 900mA, 12V FET Feature: Current Sensing Vgs(th) (Max) @ Id: 4.2V @ 4.2mA Supplier Device Package: 8-DFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 9V, 20V Vgs (Max): +20V, -1V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 12 V |
на замовлення 4885 шт: термін постачання 21-31 дні (днів) |
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CGD65B130S2-T13 | Cambridge GaN Devices |
Description: 650V GAN HEMT, 130MOHM, DFN5X6. Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 182mOhm @ 900mA, 12V FET Feature: Current Sensing Vgs(th) (Max) @ Id: 4.2V @ 4.2mA Supplier Device Package: 8-DFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 9V, 20V Vgs (Max): +20V, -1V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 12 V |
товар відсутній |
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CGD65B200S2-T13 | Cambridge GaN Devices |
Description: 650V GAN HEMT, 200MOHM, DFN5X6. Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 600mA, 12V FET Feature: Current Sensing Vgs(th) (Max) @ Id: 4.2V @ 2.75mA Supplier Device Package: 8-DFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 9V, 20V Vgs (Max): +20V, -1V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 12 V |
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CGD65B200S2-T13 | Cambridge GaN Devices |
Description: 650V GAN HEMT, 200MOHM, DFN5X6. Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 600mA, 12V FET Feature: Current Sensing Vgs(th) (Max) @ Id: 4.2V @ 2.75mA Supplier Device Package: 8-DFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 9V, 20V Vgs (Max): +20V, -1V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 12 V |
на замовлення 4255 шт: термін постачання 21-31 дні (днів) |
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| CGD65A055S2-T07 |
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Виробник: Cambridge GaN Devices
Description: 650V GAN HEMT, 55MOHM, DFN8X8. W
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 2.2A, 12V
FET Feature: Current Sensing
Vgs(th) (Max) @ Id: 4.2V @ 10mA
Supplier Device Package: 16-DFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): +20V, -1V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 12 V
Description: 650V GAN HEMT, 55MOHM, DFN8X8. W
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 2.2A, 12V
FET Feature: Current Sensing
Vgs(th) (Max) @ Id: 4.2V @ 10mA
Supplier Device Package: 16-DFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): +20V, -1V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 12 V
товар відсутній
| CGD65A055S2-T07 |
|
Виробник: Cambridge GaN Devices
Description: 650V GAN HEMT, 55MOHM, DFN8X8. W
Packaging: Cut Tape (CT)
Package / Case: 16-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 2.2A, 12V
FET Feature: Current Sensing
Vgs(th) (Max) @ Id: 4.2V @ 10mA
Supplier Device Package: 16-DFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): +20V, -1V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 12 V
Description: 650V GAN HEMT, 55MOHM, DFN8X8. W
Packaging: Cut Tape (CT)
Package / Case: 16-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 2.2A, 12V
FET Feature: Current Sensing
Vgs(th) (Max) @ Id: 4.2V @ 10mA
Supplier Device Package: 16-DFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): +20V, -1V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 12 V
на замовлення 741 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1013.15 грн |
| 10+ | 859.45 грн |
| 100+ | 743.33 грн |
| 500+ | 632.19 грн |
| CGD65A130S2-T13 |
Виробник: Cambridge GaN Devices
Description: 650V GAN HEMT, 130MOHM, DFN8X8.
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 900mA, 12V
FET Feature: Current Sensing
Vgs(th) (Max) @ Id: 4.2V @ 4.2mA
Supplier Device Package: 16-DFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): +20V, -1V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 12 V
Description: 650V GAN HEMT, 130MOHM, DFN8X8.
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 900mA, 12V
FET Feature: Current Sensing
Vgs(th) (Max) @ Id: 4.2V @ 4.2mA
Supplier Device Package: 16-DFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): +20V, -1V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 12 V
товар відсутній
| CGD65A130S2-T13 |
Виробник: Cambridge GaN Devices
Description: 650V GAN HEMT, 130MOHM, DFN8X8.
Packaging: Cut Tape (CT)
Package / Case: 16-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 900mA, 12V
FET Feature: Current Sensing
Vgs(th) (Max) @ Id: 4.2V @ 4.2mA
Supplier Device Package: 16-DFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): +20V, -1V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 12 V
Description: 650V GAN HEMT, 130MOHM, DFN8X8.
Packaging: Cut Tape (CT)
Package / Case: 16-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 900mA, 12V
FET Feature: Current Sensing
Vgs(th) (Max) @ Id: 4.2V @ 4.2mA
Supplier Device Package: 16-DFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): +20V, -1V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 12 V
на замовлення 3352 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 420.35 грн |
| 10+ | 347.07 грн |
| 100+ | 289.22 грн |
| 500+ | 239.49 грн |
| 1000+ | 215.54 грн |
| CGD65B130S2-T13 |
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Виробник: Cambridge GaN Devices
Description: 650V GAN HEMT, 130MOHM, DFN5X6.
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 900mA, 12V
FET Feature: Current Sensing
Vgs(th) (Max) @ Id: 4.2V @ 4.2mA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 9V, 20V
Vgs (Max): +20V, -1V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 12 V
Description: 650V GAN HEMT, 130MOHM, DFN5X6.
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 900mA, 12V
FET Feature: Current Sensing
Vgs(th) (Max) @ Id: 4.2V @ 4.2mA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 9V, 20V
Vgs (Max): +20V, -1V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 12 V
на замовлення 4885 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 426.1 грн |
| 10+ | 344.58 грн |
| 100+ | 278.78 грн |
| 500+ | 232.55 грн |
| 1000+ | 199.12 грн |
| 2000+ | 187.5 грн |
| CGD65B130S2-T13 |
|
Виробник: Cambridge GaN Devices
Description: 650V GAN HEMT, 130MOHM, DFN5X6.
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 900mA, 12V
FET Feature: Current Sensing
Vgs(th) (Max) @ Id: 4.2V @ 4.2mA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 9V, 20V
Vgs (Max): +20V, -1V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 12 V
Description: 650V GAN HEMT, 130MOHM, DFN5X6.
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 900mA, 12V
FET Feature: Current Sensing
Vgs(th) (Max) @ Id: 4.2V @ 4.2mA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 9V, 20V
Vgs (Max): +20V, -1V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 12 V
товар відсутній
| CGD65B200S2-T13 |
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Виробник: Cambridge GaN Devices
Description: 650V GAN HEMT, 200MOHM, DFN5X6.
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 600mA, 12V
FET Feature: Current Sensing
Vgs(th) (Max) @ Id: 4.2V @ 2.75mA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 9V, 20V
Vgs (Max): +20V, -1V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 12 V
Description: 650V GAN HEMT, 200MOHM, DFN5X6.
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 600mA, 12V
FET Feature: Current Sensing
Vgs(th) (Max) @ Id: 4.2V @ 2.75mA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 9V, 20V
Vgs (Max): +20V, -1V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 12 V
товар відсутній
| CGD65B200S2-T13 |
|
Виробник: Cambridge GaN Devices
Description: 650V GAN HEMT, 200MOHM, DFN5X6.
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 600mA, 12V
FET Feature: Current Sensing
Vgs(th) (Max) @ Id: 4.2V @ 2.75mA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 9V, 20V
Vgs (Max): +20V, -1V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 12 V
Description: 650V GAN HEMT, 200MOHM, DFN5X6.
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 600mA, 12V
FET Feature: Current Sensing
Vgs(th) (Max) @ Id: 4.2V @ 2.75mA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 9V, 20V
Vgs (Max): +20V, -1V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 12 V
на замовлення 4255 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 301.79 грн |
| 10+ | 244.05 грн |
| 100+ | 197.47 грн |
| 500+ | 164.73 грн |
| 1000+ | 141.05 грн |
| 2000+ | 132.81 грн |