| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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2N6547 | CDIL |
 Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 400V; 15A; 175W; TO3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 400V Collector current: 15A Power dissipation: 175W Case: TO3 Current gain: 6...60 Mounting: THT Kind of package: bulk Frequency: 6Hz...28MHz кількість в упаковці: 1 шт |
на замовлення 915 шт: термін постачання 7-14 дні (днів) |
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2N6740 | CDIL |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 400V; 8A; 100W; TO220 Type of transistor: NPN Case: TO220 Mounting: THT Frequency: 15...60MHz Kind of package: tube Power dissipation: 100W Collector-emitter voltage: 400V Collector current: 8A Polarisation: bipolar Current gain: 10...40 Pulsed collector current: 10A |
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2N6740 | CDIL |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 400V; 8A; 100W; TO220 Type of transistor: NPN Case: TO220 Mounting: THT Frequency: 15...60MHz Kind of package: tube Power dissipation: 100W Collector-emitter voltage: 400V Collector current: 8A Polarisation: bipolar Current gain: 10...40 Pulsed collector current: 10A кількість в упаковці: 1 шт |
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| 30KP102A | CDIL |
30KP102A-CDI Unidirectional THT transil diodes |
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| 30KP102CA | CDIL |
30KP102CA-CDI Bidirectional THT transil diodes |
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| 30KP108A | CDIL |
30KP108A-CDI Unidirectional THT transil diodes |
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| 30KP108CA | CDIL |
30KP108CA-CDI Bidirectional THT transil diodes |
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| 30KP120A | CDIL |
30KP120A-CDI Unidirectional THT transil diodes |
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| 30KP120CA | CDIL |
30KP120CA-CDI Bidirectional THT transil diodes |
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| 30KP132A | CDIL | 30KP132A-CDI Unidirectional THT transil diodes |
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| 30KP132CA | CDIL | 30KP132CA-CDI Bidirectional THT transil diodes |
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30KP144A | CDIL |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 30kW; 160.8V; 135.8A; unidirectional; R6; bulk Type of diode: TVS Peak pulse power dissipation: 30kW Max. off-state voltage: 144V Breakdown voltage: 160.8V Max. forward impulse current: 135.8A Semiconductor structure: unidirectional Case: R6 Mounting: THT Leakage current: 10µA Kind of package: bulk Features of semiconductor devices: glass passivated |
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30KP144A | CDIL |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 30kW; 160.8V; 135.8A; unidirectional; R6; bulk Type of diode: TVS Peak pulse power dissipation: 30kW Max. off-state voltage: 144V Breakdown voltage: 160.8V Max. forward impulse current: 135.8A Semiconductor structure: unidirectional Case: R6 Mounting: THT Leakage current: 10µA Kind of package: bulk Features of semiconductor devices: glass passivated кількість в упаковці: 1 шт |
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30KP144CA | CDIL |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 160.8V; 135.8A; bidirectional; R6; 30kW; bulk Type of diode: TVS Peak pulse power dissipation: 30kW Max. off-state voltage: 144V Breakdown voltage: 160.8V Max. forward impulse current: 135.8A Semiconductor structure: bidirectional Case: R6 Mounting: THT Leakage current: 10µA Kind of package: bulk Features of semiconductor devices: glass passivated |
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30KP144CA | CDIL |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 160.8V; 135.8A; bidirectional; R6; 30kW; bulk Type of diode: TVS Peak pulse power dissipation: 30kW Max. off-state voltage: 144V Breakdown voltage: 160.8V Max. forward impulse current: 135.8A Semiconductor structure: bidirectional Case: R6 Mounting: THT Leakage current: 10µA Kind of package: bulk Features of semiconductor devices: glass passivated кількість в упаковці: 1 шт |
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30KP150A | CDIL |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 30kW; 167.6V; 129.8A; unidirectional; R6; bulk Mounting: THT Max. off-state voltage: 150V Semiconductor structure: unidirectional Max. forward impulse current: 129.8A Breakdown voltage: 167.6V Leakage current: 10µA Kind of package: bulk Type of diode: TVS Features of semiconductor devices: glass passivated Peak pulse power dissipation: 30kW Case: R6 |
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30KP150A | CDIL |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 30kW; 167.6V; 129.8A; unidirectional; R6; bulk Mounting: THT Max. off-state voltage: 150V Semiconductor structure: unidirectional Max. forward impulse current: 129.8A Breakdown voltage: 167.6V Leakage current: 10µA Kind of package: bulk Type of diode: TVS Features of semiconductor devices: glass passivated Peak pulse power dissipation: 30kW Case: R6 кількість в упаковці: 1 шт |
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| 30KP150CA | CDIL |
30KP150CA-CDI Bidirectional THT transil diodes |
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| 30KP156A | CDIL |
30KP156A-CDI Unidirectional THT transil diodes |
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| 30KP156CA | CDIL | 30KP156CA-CDI Bidirectional THT transil diodes |
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| 30KP160A | CDIL |
30KP160A-CDI Unidirectional THT transil diodes |
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30KP160CA | CDIL |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 178.7V; 120A; bidirectional; R6; 30kW; bulk Type of diode: TVS Peak pulse power dissipation: 30kW Max. off-state voltage: 160V Breakdown voltage: 178.7V Max. forward impulse current: 120A Semiconductor structure: bidirectional Case: R6 Mounting: THT Leakage current: 10µA Kind of package: bulk Features of semiconductor devices: glass passivated |
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30KP160CA | CDIL |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 178.7V; 120A; bidirectional; R6; 30kW; bulk Type of diode: TVS Peak pulse power dissipation: 30kW Max. off-state voltage: 160V Breakdown voltage: 178.7V Max. forward impulse current: 120A Semiconductor structure: bidirectional Case: R6 Mounting: THT Leakage current: 10µA Kind of package: bulk Features of semiconductor devices: glass passivated кількість в упаковці: 1 шт |
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| 30KP168A | CDIL | 30KP168A-CDI Unidirectional THT transil diodes |
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30KP168CA | CDIL |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 187.7V; 111.2A; bidirectional; R6; 30kW; bulk Case: R6 Type of diode: TVS Semiconductor structure: bidirectional Mounting: THT Kind of package: bulk Features of semiconductor devices: glass passivated Max. forward impulse current: 111.2A Peak pulse power dissipation: 30kW Max. off-state voltage: 168V Breakdown voltage: 187.7V Leakage current: 10µA |
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30KP168CA | CDIL |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 187.7V; 111.2A; bidirectional; R6; 30kW; bulk Case: R6 Type of diode: TVS Semiconductor structure: bidirectional Mounting: THT Kind of package: bulk Features of semiconductor devices: glass passivated Max. forward impulse current: 111.2A Peak pulse power dissipation: 30kW Max. off-state voltage: 168V Breakdown voltage: 187.7V Leakage current: 10µA |
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| 30KP170A | CDIL |
30KP170A-CDI Unidirectional THT transil diodes |
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30KP170CA | CDIL |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 189.9V; 110.2A; bidirectional; R6; 30kW; bulk Case: R6 Mounting: THT Breakdown voltage: 189.9V Kind of package: bulk Max. forward impulse current: 110.2A Peak pulse power dissipation: 30kW Features of semiconductor devices: glass passivated Max. off-state voltage: 170V Semiconductor structure: bidirectional Leakage current: 10µA Type of diode: TVS |
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30KP170CA | CDIL |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 189.9V; 110.2A; bidirectional; R6; 30kW; bulk Case: R6 Mounting: THT Breakdown voltage: 189.9V Kind of package: bulk Max. forward impulse current: 110.2A Peak pulse power dissipation: 30kW Features of semiconductor devices: glass passivated Max. off-state voltage: 170V Semiconductor structure: bidirectional Leakage current: 10µA Type of diode: TVS кількість в упаковці: 1 шт |
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30KP180A | CDIL |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 30kW; 201.1V; 104.3A; unidirectional; R6; bulk Type of diode: TVS Peak pulse power dissipation: 30kW Max. off-state voltage: 180V Breakdown voltage: 201.1V Max. forward impulse current: 104.3A Semiconductor structure: unidirectional Case: R6 Mounting: THT Leakage current: 10µA Kind of package: bulk Features of semiconductor devices: glass passivated |
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30KP180A | CDIL |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 30kW; 201.1V; 104.3A; unidirectional; R6; bulk Type of diode: TVS Peak pulse power dissipation: 30kW Max. off-state voltage: 180V Breakdown voltage: 201.1V Max. forward impulse current: 104.3A Semiconductor structure: unidirectional Case: R6 Mounting: THT Leakage current: 10µA Kind of package: bulk Features of semiconductor devices: glass passivated кількість в упаковці: 1 шт |
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30KP180CA | CDIL |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 201.1V; 104.3A; bidirectional; R6; 30kW; bulk Type of diode: TVS Peak pulse power dissipation: 30kW Max. off-state voltage: 180V Breakdown voltage: 201.1V Max. forward impulse current: 104.3A Semiconductor structure: bidirectional Case: R6 Mounting: THT Leakage current: 10µA Kind of package: bulk Features of semiconductor devices: glass passivated |
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30KP180CA | CDIL |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 201.1V; 104.3A; bidirectional; R6; 30kW; bulk Type of diode: TVS Peak pulse power dissipation: 30kW Max. off-state voltage: 180V Breakdown voltage: 201.1V Max. forward impulse current: 104.3A Semiconductor structure: bidirectional Case: R6 Mounting: THT Leakage current: 10µA Kind of package: bulk Features of semiconductor devices: glass passivated кількість в упаковці: 1 шт |
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| 30KP198A | CDIL | 30KP198A-CDI Unidirectional THT transil diodes |
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| 30KP198CA | CDIL | 30KP198CA-CDI Bidirectional THT transil diodes |
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30KP216A | CDIL |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 30kW; 241.3V; 86.9A; unidirectional; R6; bulk Case: R6 Mounting: THT Kind of package: bulk Max. off-state voltage: 216V Semiconductor structure: unidirectional Max. forward impulse current: 86.9A Breakdown voltage: 241.3V Leakage current: 10µA Type of diode: TVS Features of semiconductor devices: glass passivated Peak pulse power dissipation: 30kW |
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30KP216A | CDIL |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 30kW; 241.3V; 86.9A; unidirectional; R6; bulk Case: R6 Mounting: THT Kind of package: bulk Max. off-state voltage: 216V Semiconductor structure: unidirectional Max. forward impulse current: 86.9A Breakdown voltage: 241.3V Leakage current: 10µA Type of diode: TVS Features of semiconductor devices: glass passivated Peak pulse power dissipation: 30kW кількість в упаковці: 1000 шт |
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30KP216CA | CDIL |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 241.3V; 86.9A; bidirectional; R6; 30kW; bulk Type of diode: TVS Peak pulse power dissipation: 30kW Max. off-state voltage: 216V Breakdown voltage: 241.3V Max. forward impulse current: 86.9A Semiconductor structure: bidirectional Case: R6 Mounting: THT Leakage current: 10µA Kind of package: bulk Features of semiconductor devices: glass passivated |
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30KP216CA | CDIL |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 241.3V; 86.9A; bidirectional; R6; 30kW; bulk Type of diode: TVS Peak pulse power dissipation: 30kW Max. off-state voltage: 216V Breakdown voltage: 241.3V Max. forward impulse current: 86.9A Semiconductor structure: bidirectional Case: R6 Mounting: THT Leakage current: 10µA Kind of package: bulk Features of semiconductor devices: glass passivated кількість в упаковці: 1 шт |
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| 30KP240A | CDIL | 30KP240A-CDI Unidirectional THT transil diodes |
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30KP240CA | CDIL |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 268.1V; 78.3A; bidirectional; R6; 30kW; bulk Mounting: THT Case: R6 Breakdown voltage: 268.1V Max. forward impulse current: 78.3A Leakage current: 10µA Kind of package: bulk Type of diode: TVS Features of semiconductor devices: glass passivated Peak pulse power dissipation: 30kW Max. off-state voltage: 240V Semiconductor structure: bidirectional |
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30KP240CA | CDIL |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 268.1V; 78.3A; bidirectional; R6; 30kW; bulk Mounting: THT Case: R6 Breakdown voltage: 268.1V Max. forward impulse current: 78.3A Leakage current: 10µA Kind of package: bulk Type of diode: TVS Features of semiconductor devices: glass passivated Peak pulse power dissipation: 30kW Max. off-state voltage: 240V Semiconductor structure: bidirectional кількість в упаковці: 1 шт |
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30KP258A | CDIL |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 30kW; 288.2V; 72.8A; unidirectional; R6; bulk Type of diode: TVS Peak pulse power dissipation: 30kW Max. off-state voltage: 258V Breakdown voltage: 288.2V Max. forward impulse current: 72.8A Semiconductor structure: unidirectional Case: R6 Mounting: THT Leakage current: 10µA Kind of package: bulk Features of semiconductor devices: glass passivated |
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30KP258A | CDIL |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 30kW; 288.2V; 72.8A; unidirectional; R6; bulk Type of diode: TVS Peak pulse power dissipation: 30kW Max. off-state voltage: 258V Breakdown voltage: 288.2V Max. forward impulse current: 72.8A Semiconductor structure: unidirectional Case: R6 Mounting: THT Leakage current: 10µA Kind of package: bulk Features of semiconductor devices: glass passivated кількість в упаковці: 1 шт |
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| 30KP258CA | CDIL | 30KP258CA-CDI Bidirectional THT transil diodes |
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30KP260A | CDIL |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 30kW; 290.4V; 72.8A; unidirectional; R6; bulk Case: R6 Mounting: THT Breakdown voltage: 290.4V Kind of package: bulk Peak pulse power dissipation: 30kW Features of semiconductor devices: glass passivated Leakage current: 10µA Type of diode: TVS Semiconductor structure: unidirectional Max. off-state voltage: 260V Max. forward impulse current: 72.8A |
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30KP260A | CDIL |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 30kW; 290.4V; 72.8A; unidirectional; R6; bulk Case: R6 Mounting: THT Breakdown voltage: 290.4V Kind of package: bulk Peak pulse power dissipation: 30kW Features of semiconductor devices: glass passivated Leakage current: 10µA Type of diode: TVS Semiconductor structure: unidirectional Max. off-state voltage: 260V Max. forward impulse current: 72.8A |
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30KP260CA | CDIL |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 290.4V; 72.8A; bidirectional; R6; 30kW; bulk Breakdown voltage: 290.4V Leakage current: 10µA Kind of package: bulk Type of diode: TVS Features of semiconductor devices: glass passivated Peak pulse power dissipation: 30kW Mounting: THT Case: R6 Max. off-state voltage: 260V Semiconductor structure: bidirectional Max. forward impulse current: 72.8A |
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30KP260CA | CDIL |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 290.4V; 72.8A; bidirectional; R6; 30kW; bulk Breakdown voltage: 290.4V Leakage current: 10µA Kind of package: bulk Type of diode: TVS Features of semiconductor devices: glass passivated Peak pulse power dissipation: 30kW Mounting: THT Case: R6 Max. off-state voltage: 260V Semiconductor structure: bidirectional Max. forward impulse current: 72.8A кількість в упаковці: 1 шт |
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| 30KP270A | CDIL | 30KP270A-CDI Unidirectional THT transil diodes |
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30KP270CA | CDIL |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 301.6V; 69.5A; bidirectional; R6; 30kW; bulk Case: R6 Mounting: THT Breakdown voltage: 301.6V Kind of package: bulk Max. forward impulse current: 69.5A Peak pulse power dissipation: 30kW Features of semiconductor devices: glass passivated Max. off-state voltage: 270V Semiconductor structure: bidirectional Leakage current: 10µA Type of diode: TVS |
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30KP270CA | CDIL |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 301.6V; 69.5A; bidirectional; R6; 30kW; bulk Case: R6 Mounting: THT Breakdown voltage: 301.6V Kind of package: bulk Max. forward impulse current: 69.5A Peak pulse power dissipation: 30kW Features of semiconductor devices: glass passivated Max. off-state voltage: 270V Semiconductor structure: bidirectional Leakage current: 10µA Type of diode: TVS кількість в упаковці: 1 шт |
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30KP280A | CDIL |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 30kW; 312.8V; 65.3A; unidirectional; R6; bulk Mounting: THT Case: R6 Max. off-state voltage: 280V Semiconductor structure: unidirectional Max. forward impulse current: 65.3A Breakdown voltage: 312.8V Leakage current: 10µA Kind of package: bulk Type of diode: TVS Features of semiconductor devices: glass passivated Peak pulse power dissipation: 30kW |
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30KP280A | CDIL |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 30kW; 312.8V; 65.3A; unidirectional; R6; bulk Mounting: THT Case: R6 Max. off-state voltage: 280V Semiconductor structure: unidirectional Max. forward impulse current: 65.3A Breakdown voltage: 312.8V Leakage current: 10µA Kind of package: bulk Type of diode: TVS Features of semiconductor devices: glass passivated Peak pulse power dissipation: 30kW кількість в упаковці: 1 шт |
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| 30KP280CA | CDIL | 30KP280CA-CDI Bidirectional THT transil diodes |
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30KP288A | CDIL |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 30kW; 321.7V; 64.5A; unidirectional; R6; bulk Mounting: THT Breakdown voltage: 321.7V Max. forward impulse current: 64.5A Semiconductor structure: unidirectional Kind of package: bulk Type of diode: TVS Max. off-state voltage: 288V Features of semiconductor devices: glass passivated Leakage current: 10µA Peak pulse power dissipation: 30kW Case: R6 |
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30KP288A | CDIL |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 30kW; 321.7V; 64.5A; unidirectional; R6; bulk Mounting: THT Breakdown voltage: 321.7V Max. forward impulse current: 64.5A Semiconductor structure: unidirectional Kind of package: bulk Type of diode: TVS Max. off-state voltage: 288V Features of semiconductor devices: glass passivated Leakage current: 10µA Peak pulse power dissipation: 30kW Case: R6 кількість в упаковці: 1 шт |
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30KP288CA | CDIL |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 321.7V; 64.5A; bidirectional; R6; 30kW; bulk Mounting: THT Breakdown voltage: 321.7V Max. forward impulse current: 64.5A Semiconductor structure: bidirectional Kind of package: bulk Type of diode: TVS Max. off-state voltage: 288V Features of semiconductor devices: glass passivated Leakage current: 10µA Peak pulse power dissipation: 30kW Case: R6 |
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30KP288CA | CDIL |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 321.7V; 64.5A; bidirectional; R6; 30kW; bulk Mounting: THT Breakdown voltage: 321.7V Max. forward impulse current: 64.5A Semiconductor structure: bidirectional Kind of package: bulk Type of diode: TVS Max. off-state voltage: 288V Features of semiconductor devices: glass passivated Leakage current: 10µA Peak pulse power dissipation: 30kW Case: R6 кількість в упаковці: 1 шт |
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30KP28A | CDIL |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 30kW; 31.3V; 606A; unidirectional; R6; bulk Type of diode: TVS Peak pulse power dissipation: 30kW Max. off-state voltage: 28V Breakdown voltage: 31.3V Max. forward impulse current: 606A Semiconductor structure: unidirectional Case: R6 Mounting: THT Leakage current: 5mA Kind of package: bulk Features of semiconductor devices: glass passivated |
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| 2N6547 |
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Виробник: CDIL
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 15A; 175W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 15A
Power dissipation: 175W
Case: TO3
Current gain: 6...60
Mounting: THT
Kind of package: bulk
Frequency: 6Hz...28MHz
кількість в упаковці: 1 шт
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 15A; 175W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 15A
Power dissipation: 175W
Case: TO3
Current gain: 6...60
Mounting: THT
Kind of package: bulk
Frequency: 6Hz...28MHz
кількість в упаковці: 1 шт
на замовлення 915 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 234.11 грн |
| 5+ | 186.34 грн |
| 7+ | 146.65 грн |
| 20+ | 138.89 грн |
| 2N6740 |
Виробник: CDIL
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 8A; 100W; TO220
Type of transistor: NPN
Case: TO220
Mounting: THT
Frequency: 15...60MHz
Kind of package: tube
Power dissipation: 100W
Collector-emitter voltage: 400V
Collector current: 8A
Polarisation: bipolar
Current gain: 10...40
Pulsed collector current: 10A
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 8A; 100W; TO220
Type of transistor: NPN
Case: TO220
Mounting: THT
Frequency: 15...60MHz
Kind of package: tube
Power dissipation: 100W
Collector-emitter voltage: 400V
Collector current: 8A
Polarisation: bipolar
Current gain: 10...40
Pulsed collector current: 10A
товар відсутній
| 2N6740 |
Виробник: CDIL
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 8A; 100W; TO220
Type of transistor: NPN
Case: TO220
Mounting: THT
Frequency: 15...60MHz
Kind of package: tube
Power dissipation: 100W
Collector-emitter voltage: 400V
Collector current: 8A
Polarisation: bipolar
Current gain: 10...40
Pulsed collector current: 10A
кількість в упаковці: 1 шт
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 8A; 100W; TO220
Type of transistor: NPN
Case: TO220
Mounting: THT
Frequency: 15...60MHz
Kind of package: tube
Power dissipation: 100W
Collector-emitter voltage: 400V
Collector current: 8A
Polarisation: bipolar
Current gain: 10...40
Pulsed collector current: 10A
кількість в упаковці: 1 шт
товар відсутній
| 30KP144A |
|
Виробник: CDIL
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 30kW; 160.8V; 135.8A; unidirectional; R6; bulk
Type of diode: TVS
Peak pulse power dissipation: 30kW
Max. off-state voltage: 144V
Breakdown voltage: 160.8V
Max. forward impulse current: 135.8A
Semiconductor structure: unidirectional
Case: R6
Mounting: THT
Leakage current: 10µA
Kind of package: bulk
Features of semiconductor devices: glass passivated
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 30kW; 160.8V; 135.8A; unidirectional; R6; bulk
Type of diode: TVS
Peak pulse power dissipation: 30kW
Max. off-state voltage: 144V
Breakdown voltage: 160.8V
Max. forward impulse current: 135.8A
Semiconductor structure: unidirectional
Case: R6
Mounting: THT
Leakage current: 10µA
Kind of package: bulk
Features of semiconductor devices: glass passivated
товар відсутній
| 30KP144A |
|
Виробник: CDIL
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 30kW; 160.8V; 135.8A; unidirectional; R6; bulk
Type of diode: TVS
Peak pulse power dissipation: 30kW
Max. off-state voltage: 144V
Breakdown voltage: 160.8V
Max. forward impulse current: 135.8A
Semiconductor structure: unidirectional
Case: R6
Mounting: THT
Leakage current: 10µA
Kind of package: bulk
Features of semiconductor devices: glass passivated
кількість в упаковці: 1 шт
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 30kW; 160.8V; 135.8A; unidirectional; R6; bulk
Type of diode: TVS
Peak pulse power dissipation: 30kW
Max. off-state voltage: 144V
Breakdown voltage: 160.8V
Max. forward impulse current: 135.8A
Semiconductor structure: unidirectional
Case: R6
Mounting: THT
Leakage current: 10µA
Kind of package: bulk
Features of semiconductor devices: glass passivated
кількість в упаковці: 1 шт
товар відсутній
| 30KP144CA |
|
Виробник: CDIL
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 160.8V; 135.8A; bidirectional; R6; 30kW; bulk
Type of diode: TVS
Peak pulse power dissipation: 30kW
Max. off-state voltage: 144V
Breakdown voltage: 160.8V
Max. forward impulse current: 135.8A
Semiconductor structure: bidirectional
Case: R6
Mounting: THT
Leakage current: 10µA
Kind of package: bulk
Features of semiconductor devices: glass passivated
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 160.8V; 135.8A; bidirectional; R6; 30kW; bulk
Type of diode: TVS
Peak pulse power dissipation: 30kW
Max. off-state voltage: 144V
Breakdown voltage: 160.8V
Max. forward impulse current: 135.8A
Semiconductor structure: bidirectional
Case: R6
Mounting: THT
Leakage current: 10µA
Kind of package: bulk
Features of semiconductor devices: glass passivated
товар відсутній
| 30KP144CA |
|
Виробник: CDIL
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 160.8V; 135.8A; bidirectional; R6; 30kW; bulk
Type of diode: TVS
Peak pulse power dissipation: 30kW
Max. off-state voltage: 144V
Breakdown voltage: 160.8V
Max. forward impulse current: 135.8A
Semiconductor structure: bidirectional
Case: R6
Mounting: THT
Leakage current: 10µA
Kind of package: bulk
Features of semiconductor devices: glass passivated
кількість в упаковці: 1 шт
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 160.8V; 135.8A; bidirectional; R6; 30kW; bulk
Type of diode: TVS
Peak pulse power dissipation: 30kW
Max. off-state voltage: 144V
Breakdown voltage: 160.8V
Max. forward impulse current: 135.8A
Semiconductor structure: bidirectional
Case: R6
Mounting: THT
Leakage current: 10µA
Kind of package: bulk
Features of semiconductor devices: glass passivated
кількість в упаковці: 1 шт
товар відсутній
| 30KP150A |
|
Виробник: CDIL
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 30kW; 167.6V; 129.8A; unidirectional; R6; bulk
Mounting: THT
Max. off-state voltage: 150V
Semiconductor structure: unidirectional
Max. forward impulse current: 129.8A
Breakdown voltage: 167.6V
Leakage current: 10µA
Kind of package: bulk
Type of diode: TVS
Features of semiconductor devices: glass passivated
Peak pulse power dissipation: 30kW
Case: R6
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 30kW; 167.6V; 129.8A; unidirectional; R6; bulk
Mounting: THT
Max. off-state voltage: 150V
Semiconductor structure: unidirectional
Max. forward impulse current: 129.8A
Breakdown voltage: 167.6V
Leakage current: 10µA
Kind of package: bulk
Type of diode: TVS
Features of semiconductor devices: glass passivated
Peak pulse power dissipation: 30kW
Case: R6
товар відсутній
| 30KP150A |
|
Виробник: CDIL
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 30kW; 167.6V; 129.8A; unidirectional; R6; bulk
Mounting: THT
Max. off-state voltage: 150V
Semiconductor structure: unidirectional
Max. forward impulse current: 129.8A
Breakdown voltage: 167.6V
Leakage current: 10µA
Kind of package: bulk
Type of diode: TVS
Features of semiconductor devices: glass passivated
Peak pulse power dissipation: 30kW
Case: R6
кількість в упаковці: 1 шт
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 30kW; 167.6V; 129.8A; unidirectional; R6; bulk
Mounting: THT
Max. off-state voltage: 150V
Semiconductor structure: unidirectional
Max. forward impulse current: 129.8A
Breakdown voltage: 167.6V
Leakage current: 10µA
Kind of package: bulk
Type of diode: TVS
Features of semiconductor devices: glass passivated
Peak pulse power dissipation: 30kW
Case: R6
кількість в упаковці: 1 шт
товар відсутній
| 30KP160CA |
|
Виробник: CDIL
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 178.7V; 120A; bidirectional; R6; 30kW; bulk
Type of diode: TVS
Peak pulse power dissipation: 30kW
Max. off-state voltage: 160V
Breakdown voltage: 178.7V
Max. forward impulse current: 120A
Semiconductor structure: bidirectional
Case: R6
Mounting: THT
Leakage current: 10µA
Kind of package: bulk
Features of semiconductor devices: glass passivated
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 178.7V; 120A; bidirectional; R6; 30kW; bulk
Type of diode: TVS
Peak pulse power dissipation: 30kW
Max. off-state voltage: 160V
Breakdown voltage: 178.7V
Max. forward impulse current: 120A
Semiconductor structure: bidirectional
Case: R6
Mounting: THT
Leakage current: 10µA
Kind of package: bulk
Features of semiconductor devices: glass passivated
товар відсутній
| 30KP160CA |
|
Виробник: CDIL
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 178.7V; 120A; bidirectional; R6; 30kW; bulk
Type of diode: TVS
Peak pulse power dissipation: 30kW
Max. off-state voltage: 160V
Breakdown voltage: 178.7V
Max. forward impulse current: 120A
Semiconductor structure: bidirectional
Case: R6
Mounting: THT
Leakage current: 10µA
Kind of package: bulk
Features of semiconductor devices: glass passivated
кількість в упаковці: 1 шт
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 178.7V; 120A; bidirectional; R6; 30kW; bulk
Type of diode: TVS
Peak pulse power dissipation: 30kW
Max. off-state voltage: 160V
Breakdown voltage: 178.7V
Max. forward impulse current: 120A
Semiconductor structure: bidirectional
Case: R6
Mounting: THT
Leakage current: 10µA
Kind of package: bulk
Features of semiconductor devices: glass passivated
кількість в упаковці: 1 шт
товар відсутній
| 30KP168CA |
|
Виробник: CDIL
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 187.7V; 111.2A; bidirectional; R6; 30kW; bulk
Case: R6
Type of diode: TVS
Semiconductor structure: bidirectional
Mounting: THT
Kind of package: bulk
Features of semiconductor devices: glass passivated
Max. forward impulse current: 111.2A
Peak pulse power dissipation: 30kW
Max. off-state voltage: 168V
Breakdown voltage: 187.7V
Leakage current: 10µA
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 187.7V; 111.2A; bidirectional; R6; 30kW; bulk
Case: R6
Type of diode: TVS
Semiconductor structure: bidirectional
Mounting: THT
Kind of package: bulk
Features of semiconductor devices: glass passivated
Max. forward impulse current: 111.2A
Peak pulse power dissipation: 30kW
Max. off-state voltage: 168V
Breakdown voltage: 187.7V
Leakage current: 10µA
товар відсутній
| 30KP168CA |
|
Виробник: CDIL
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 187.7V; 111.2A; bidirectional; R6; 30kW; bulk
Case: R6
Type of diode: TVS
Semiconductor structure: bidirectional
Mounting: THT
Kind of package: bulk
Features of semiconductor devices: glass passivated
Max. forward impulse current: 111.2A
Peak pulse power dissipation: 30kW
Max. off-state voltage: 168V
Breakdown voltage: 187.7V
Leakage current: 10µA
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 187.7V; 111.2A; bidirectional; R6; 30kW; bulk
Case: R6
Type of diode: TVS
Semiconductor structure: bidirectional
Mounting: THT
Kind of package: bulk
Features of semiconductor devices: glass passivated
Max. forward impulse current: 111.2A
Peak pulse power dissipation: 30kW
Max. off-state voltage: 168V
Breakdown voltage: 187.7V
Leakage current: 10µA
товар відсутній
| 30KP170CA |
|
Виробник: CDIL
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 189.9V; 110.2A; bidirectional; R6; 30kW; bulk
Case: R6
Mounting: THT
Breakdown voltage: 189.9V
Kind of package: bulk
Max. forward impulse current: 110.2A
Peak pulse power dissipation: 30kW
Features of semiconductor devices: glass passivated
Max. off-state voltage: 170V
Semiconductor structure: bidirectional
Leakage current: 10µA
Type of diode: TVS
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 189.9V; 110.2A; bidirectional; R6; 30kW; bulk
Case: R6
Mounting: THT
Breakdown voltage: 189.9V
Kind of package: bulk
Max. forward impulse current: 110.2A
Peak pulse power dissipation: 30kW
Features of semiconductor devices: glass passivated
Max. off-state voltage: 170V
Semiconductor structure: bidirectional
Leakage current: 10µA
Type of diode: TVS
товар відсутній
| 30KP170CA |
|
Виробник: CDIL
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 189.9V; 110.2A; bidirectional; R6; 30kW; bulk
Case: R6
Mounting: THT
Breakdown voltage: 189.9V
Kind of package: bulk
Max. forward impulse current: 110.2A
Peak pulse power dissipation: 30kW
Features of semiconductor devices: glass passivated
Max. off-state voltage: 170V
Semiconductor structure: bidirectional
Leakage current: 10µA
Type of diode: TVS
кількість в упаковці: 1 шт
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 189.9V; 110.2A; bidirectional; R6; 30kW; bulk
Case: R6
Mounting: THT
Breakdown voltage: 189.9V
Kind of package: bulk
Max. forward impulse current: 110.2A
Peak pulse power dissipation: 30kW
Features of semiconductor devices: glass passivated
Max. off-state voltage: 170V
Semiconductor structure: bidirectional
Leakage current: 10µA
Type of diode: TVS
кількість в упаковці: 1 шт
товар відсутній
| 30KP180A |
|
Виробник: CDIL
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 30kW; 201.1V; 104.3A; unidirectional; R6; bulk
Type of diode: TVS
Peak pulse power dissipation: 30kW
Max. off-state voltage: 180V
Breakdown voltage: 201.1V
Max. forward impulse current: 104.3A
Semiconductor structure: unidirectional
Case: R6
Mounting: THT
Leakage current: 10µA
Kind of package: bulk
Features of semiconductor devices: glass passivated
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 30kW; 201.1V; 104.3A; unidirectional; R6; bulk
Type of diode: TVS
Peak pulse power dissipation: 30kW
Max. off-state voltage: 180V
Breakdown voltage: 201.1V
Max. forward impulse current: 104.3A
Semiconductor structure: unidirectional
Case: R6
Mounting: THT
Leakage current: 10µA
Kind of package: bulk
Features of semiconductor devices: glass passivated
товар відсутній
| 30KP180A |
|
Виробник: CDIL
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 30kW; 201.1V; 104.3A; unidirectional; R6; bulk
Type of diode: TVS
Peak pulse power dissipation: 30kW
Max. off-state voltage: 180V
Breakdown voltage: 201.1V
Max. forward impulse current: 104.3A
Semiconductor structure: unidirectional
Case: R6
Mounting: THT
Leakage current: 10µA
Kind of package: bulk
Features of semiconductor devices: glass passivated
кількість в упаковці: 1 шт
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 30kW; 201.1V; 104.3A; unidirectional; R6; bulk
Type of diode: TVS
Peak pulse power dissipation: 30kW
Max. off-state voltage: 180V
Breakdown voltage: 201.1V
Max. forward impulse current: 104.3A
Semiconductor structure: unidirectional
Case: R6
Mounting: THT
Leakage current: 10µA
Kind of package: bulk
Features of semiconductor devices: glass passivated
кількість в упаковці: 1 шт
товар відсутній
| 30KP180CA |
|
Виробник: CDIL
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 201.1V; 104.3A; bidirectional; R6; 30kW; bulk
Type of diode: TVS
Peak pulse power dissipation: 30kW
Max. off-state voltage: 180V
Breakdown voltage: 201.1V
Max. forward impulse current: 104.3A
Semiconductor structure: bidirectional
Case: R6
Mounting: THT
Leakage current: 10µA
Kind of package: bulk
Features of semiconductor devices: glass passivated
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 201.1V; 104.3A; bidirectional; R6; 30kW; bulk
Type of diode: TVS
Peak pulse power dissipation: 30kW
Max. off-state voltage: 180V
Breakdown voltage: 201.1V
Max. forward impulse current: 104.3A
Semiconductor structure: bidirectional
Case: R6
Mounting: THT
Leakage current: 10µA
Kind of package: bulk
Features of semiconductor devices: glass passivated
товар відсутній
| 30KP180CA |
|
Виробник: CDIL
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 201.1V; 104.3A; bidirectional; R6; 30kW; bulk
Type of diode: TVS
Peak pulse power dissipation: 30kW
Max. off-state voltage: 180V
Breakdown voltage: 201.1V
Max. forward impulse current: 104.3A
Semiconductor structure: bidirectional
Case: R6
Mounting: THT
Leakage current: 10µA
Kind of package: bulk
Features of semiconductor devices: glass passivated
кількість в упаковці: 1 шт
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 201.1V; 104.3A; bidirectional; R6; 30kW; bulk
Type of diode: TVS
Peak pulse power dissipation: 30kW
Max. off-state voltage: 180V
Breakdown voltage: 201.1V
Max. forward impulse current: 104.3A
Semiconductor structure: bidirectional
Case: R6
Mounting: THT
Leakage current: 10µA
Kind of package: bulk
Features of semiconductor devices: glass passivated
кількість в упаковці: 1 шт
товар відсутній
| 30KP216A |
|
Виробник: CDIL
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 30kW; 241.3V; 86.9A; unidirectional; R6; bulk
Case: R6
Mounting: THT
Kind of package: bulk
Max. off-state voltage: 216V
Semiconductor structure: unidirectional
Max. forward impulse current: 86.9A
Breakdown voltage: 241.3V
Leakage current: 10µA
Type of diode: TVS
Features of semiconductor devices: glass passivated
Peak pulse power dissipation: 30kW
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 30kW; 241.3V; 86.9A; unidirectional; R6; bulk
Case: R6
Mounting: THT
Kind of package: bulk
Max. off-state voltage: 216V
Semiconductor structure: unidirectional
Max. forward impulse current: 86.9A
Breakdown voltage: 241.3V
Leakage current: 10µA
Type of diode: TVS
Features of semiconductor devices: glass passivated
Peak pulse power dissipation: 30kW
товар відсутній
| 30KP216A |
|
Виробник: CDIL
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 30kW; 241.3V; 86.9A; unidirectional; R6; bulk
Case: R6
Mounting: THT
Kind of package: bulk
Max. off-state voltage: 216V
Semiconductor structure: unidirectional
Max. forward impulse current: 86.9A
Breakdown voltage: 241.3V
Leakage current: 10µA
Type of diode: TVS
Features of semiconductor devices: glass passivated
Peak pulse power dissipation: 30kW
кількість в упаковці: 1000 шт
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 30kW; 241.3V; 86.9A; unidirectional; R6; bulk
Case: R6
Mounting: THT
Kind of package: bulk
Max. off-state voltage: 216V
Semiconductor structure: unidirectional
Max. forward impulse current: 86.9A
Breakdown voltage: 241.3V
Leakage current: 10µA
Type of diode: TVS
Features of semiconductor devices: glass passivated
Peak pulse power dissipation: 30kW
кількість в упаковці: 1000 шт
товар відсутній
| 30KP216CA |
|
Виробник: CDIL
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 241.3V; 86.9A; bidirectional; R6; 30kW; bulk
Type of diode: TVS
Peak pulse power dissipation: 30kW
Max. off-state voltage: 216V
Breakdown voltage: 241.3V
Max. forward impulse current: 86.9A
Semiconductor structure: bidirectional
Case: R6
Mounting: THT
Leakage current: 10µA
Kind of package: bulk
Features of semiconductor devices: glass passivated
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 241.3V; 86.9A; bidirectional; R6; 30kW; bulk
Type of diode: TVS
Peak pulse power dissipation: 30kW
Max. off-state voltage: 216V
Breakdown voltage: 241.3V
Max. forward impulse current: 86.9A
Semiconductor structure: bidirectional
Case: R6
Mounting: THT
Leakage current: 10µA
Kind of package: bulk
Features of semiconductor devices: glass passivated
товар відсутній
| 30KP216CA |
|
Виробник: CDIL
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 241.3V; 86.9A; bidirectional; R6; 30kW; bulk
Type of diode: TVS
Peak pulse power dissipation: 30kW
Max. off-state voltage: 216V
Breakdown voltage: 241.3V
Max. forward impulse current: 86.9A
Semiconductor structure: bidirectional
Case: R6
Mounting: THT
Leakage current: 10µA
Kind of package: bulk
Features of semiconductor devices: glass passivated
кількість в упаковці: 1 шт
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 241.3V; 86.9A; bidirectional; R6; 30kW; bulk
Type of diode: TVS
Peak pulse power dissipation: 30kW
Max. off-state voltage: 216V
Breakdown voltage: 241.3V
Max. forward impulse current: 86.9A
Semiconductor structure: bidirectional
Case: R6
Mounting: THT
Leakage current: 10µA
Kind of package: bulk
Features of semiconductor devices: glass passivated
кількість в упаковці: 1 шт
товар відсутній
| 30KP240CA |
|
Виробник: CDIL
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 268.1V; 78.3A; bidirectional; R6; 30kW; bulk
Mounting: THT
Case: R6
Breakdown voltage: 268.1V
Max. forward impulse current: 78.3A
Leakage current: 10µA
Kind of package: bulk
Type of diode: TVS
Features of semiconductor devices: glass passivated
Peak pulse power dissipation: 30kW
Max. off-state voltage: 240V
Semiconductor structure: bidirectional
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 268.1V; 78.3A; bidirectional; R6; 30kW; bulk
Mounting: THT
Case: R6
Breakdown voltage: 268.1V
Max. forward impulse current: 78.3A
Leakage current: 10µA
Kind of package: bulk
Type of diode: TVS
Features of semiconductor devices: glass passivated
Peak pulse power dissipation: 30kW
Max. off-state voltage: 240V
Semiconductor structure: bidirectional
товар відсутній
| 30KP240CA |
|
Виробник: CDIL
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 268.1V; 78.3A; bidirectional; R6; 30kW; bulk
Mounting: THT
Case: R6
Breakdown voltage: 268.1V
Max. forward impulse current: 78.3A
Leakage current: 10µA
Kind of package: bulk
Type of diode: TVS
Features of semiconductor devices: glass passivated
Peak pulse power dissipation: 30kW
Max. off-state voltage: 240V
Semiconductor structure: bidirectional
кількість в упаковці: 1 шт
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 268.1V; 78.3A; bidirectional; R6; 30kW; bulk
Mounting: THT
Case: R6
Breakdown voltage: 268.1V
Max. forward impulse current: 78.3A
Leakage current: 10µA
Kind of package: bulk
Type of diode: TVS
Features of semiconductor devices: glass passivated
Peak pulse power dissipation: 30kW
Max. off-state voltage: 240V
Semiconductor structure: bidirectional
кількість в упаковці: 1 шт
товар відсутній
| 30KP258A |
|
Виробник: CDIL
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 30kW; 288.2V; 72.8A; unidirectional; R6; bulk
Type of diode: TVS
Peak pulse power dissipation: 30kW
Max. off-state voltage: 258V
Breakdown voltage: 288.2V
Max. forward impulse current: 72.8A
Semiconductor structure: unidirectional
Case: R6
Mounting: THT
Leakage current: 10µA
Kind of package: bulk
Features of semiconductor devices: glass passivated
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 30kW; 288.2V; 72.8A; unidirectional; R6; bulk
Type of diode: TVS
Peak pulse power dissipation: 30kW
Max. off-state voltage: 258V
Breakdown voltage: 288.2V
Max. forward impulse current: 72.8A
Semiconductor structure: unidirectional
Case: R6
Mounting: THT
Leakage current: 10µA
Kind of package: bulk
Features of semiconductor devices: glass passivated
товар відсутній
| 30KP258A |
|
Виробник: CDIL
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 30kW; 288.2V; 72.8A; unidirectional; R6; bulk
Type of diode: TVS
Peak pulse power dissipation: 30kW
Max. off-state voltage: 258V
Breakdown voltage: 288.2V
Max. forward impulse current: 72.8A
Semiconductor structure: unidirectional
Case: R6
Mounting: THT
Leakage current: 10µA
Kind of package: bulk
Features of semiconductor devices: glass passivated
кількість в упаковці: 1 шт
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 30kW; 288.2V; 72.8A; unidirectional; R6; bulk
Type of diode: TVS
Peak pulse power dissipation: 30kW
Max. off-state voltage: 258V
Breakdown voltage: 288.2V
Max. forward impulse current: 72.8A
Semiconductor structure: unidirectional
Case: R6
Mounting: THT
Leakage current: 10µA
Kind of package: bulk
Features of semiconductor devices: glass passivated
кількість в упаковці: 1 шт
товар відсутній
| 30KP260A |
|
Виробник: CDIL
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 30kW; 290.4V; 72.8A; unidirectional; R6; bulk
Case: R6
Mounting: THT
Breakdown voltage: 290.4V
Kind of package: bulk
Peak pulse power dissipation: 30kW
Features of semiconductor devices: glass passivated
Leakage current: 10µA
Type of diode: TVS
Semiconductor structure: unidirectional
Max. off-state voltage: 260V
Max. forward impulse current: 72.8A
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 30kW; 290.4V; 72.8A; unidirectional; R6; bulk
Case: R6
Mounting: THT
Breakdown voltage: 290.4V
Kind of package: bulk
Peak pulse power dissipation: 30kW
Features of semiconductor devices: glass passivated
Leakage current: 10µA
Type of diode: TVS
Semiconductor structure: unidirectional
Max. off-state voltage: 260V
Max. forward impulse current: 72.8A
товар відсутній
| 30KP260A |
|
Виробник: CDIL
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 30kW; 290.4V; 72.8A; unidirectional; R6; bulk
Case: R6
Mounting: THT
Breakdown voltage: 290.4V
Kind of package: bulk
Peak pulse power dissipation: 30kW
Features of semiconductor devices: glass passivated
Leakage current: 10µA
Type of diode: TVS
Semiconductor structure: unidirectional
Max. off-state voltage: 260V
Max. forward impulse current: 72.8A
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 30kW; 290.4V; 72.8A; unidirectional; R6; bulk
Case: R6
Mounting: THT
Breakdown voltage: 290.4V
Kind of package: bulk
Peak pulse power dissipation: 30kW
Features of semiconductor devices: glass passivated
Leakage current: 10µA
Type of diode: TVS
Semiconductor structure: unidirectional
Max. off-state voltage: 260V
Max. forward impulse current: 72.8A
товар відсутній
| 30KP260CA |
|
Виробник: CDIL
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 290.4V; 72.8A; bidirectional; R6; 30kW; bulk
Breakdown voltage: 290.4V
Leakage current: 10µA
Kind of package: bulk
Type of diode: TVS
Features of semiconductor devices: glass passivated
Peak pulse power dissipation: 30kW
Mounting: THT
Case: R6
Max. off-state voltage: 260V
Semiconductor structure: bidirectional
Max. forward impulse current: 72.8A
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 290.4V; 72.8A; bidirectional; R6; 30kW; bulk
Breakdown voltage: 290.4V
Leakage current: 10µA
Kind of package: bulk
Type of diode: TVS
Features of semiconductor devices: glass passivated
Peak pulse power dissipation: 30kW
Mounting: THT
Case: R6
Max. off-state voltage: 260V
Semiconductor structure: bidirectional
Max. forward impulse current: 72.8A
товар відсутній
| 30KP260CA |
|
Виробник: CDIL
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 290.4V; 72.8A; bidirectional; R6; 30kW; bulk
Breakdown voltage: 290.4V
Leakage current: 10µA
Kind of package: bulk
Type of diode: TVS
Features of semiconductor devices: glass passivated
Peak pulse power dissipation: 30kW
Mounting: THT
Case: R6
Max. off-state voltage: 260V
Semiconductor structure: bidirectional
Max. forward impulse current: 72.8A
кількість в упаковці: 1 шт
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 290.4V; 72.8A; bidirectional; R6; 30kW; bulk
Breakdown voltage: 290.4V
Leakage current: 10µA
Kind of package: bulk
Type of diode: TVS
Features of semiconductor devices: glass passivated
Peak pulse power dissipation: 30kW
Mounting: THT
Case: R6
Max. off-state voltage: 260V
Semiconductor structure: bidirectional
Max. forward impulse current: 72.8A
кількість в упаковці: 1 шт
товар відсутній
| 30KP270CA |
|
Виробник: CDIL
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 301.6V; 69.5A; bidirectional; R6; 30kW; bulk
Case: R6
Mounting: THT
Breakdown voltage: 301.6V
Kind of package: bulk
Max. forward impulse current: 69.5A
Peak pulse power dissipation: 30kW
Features of semiconductor devices: glass passivated
Max. off-state voltage: 270V
Semiconductor structure: bidirectional
Leakage current: 10µA
Type of diode: TVS
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 301.6V; 69.5A; bidirectional; R6; 30kW; bulk
Case: R6
Mounting: THT
Breakdown voltage: 301.6V
Kind of package: bulk
Max. forward impulse current: 69.5A
Peak pulse power dissipation: 30kW
Features of semiconductor devices: glass passivated
Max. off-state voltage: 270V
Semiconductor structure: bidirectional
Leakage current: 10µA
Type of diode: TVS
товар відсутній
| 30KP270CA |
|
Виробник: CDIL
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 301.6V; 69.5A; bidirectional; R6; 30kW; bulk
Case: R6
Mounting: THT
Breakdown voltage: 301.6V
Kind of package: bulk
Max. forward impulse current: 69.5A
Peak pulse power dissipation: 30kW
Features of semiconductor devices: glass passivated
Max. off-state voltage: 270V
Semiconductor structure: bidirectional
Leakage current: 10µA
Type of diode: TVS
кількість в упаковці: 1 шт
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 301.6V; 69.5A; bidirectional; R6; 30kW; bulk
Case: R6
Mounting: THT
Breakdown voltage: 301.6V
Kind of package: bulk
Max. forward impulse current: 69.5A
Peak pulse power dissipation: 30kW
Features of semiconductor devices: glass passivated
Max. off-state voltage: 270V
Semiconductor structure: bidirectional
Leakage current: 10µA
Type of diode: TVS
кількість в упаковці: 1 шт
товар відсутній
| 30KP280A |
|
Виробник: CDIL
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 30kW; 312.8V; 65.3A; unidirectional; R6; bulk
Mounting: THT
Case: R6
Max. off-state voltage: 280V
Semiconductor structure: unidirectional
Max. forward impulse current: 65.3A
Breakdown voltage: 312.8V
Leakage current: 10µA
Kind of package: bulk
Type of diode: TVS
Features of semiconductor devices: glass passivated
Peak pulse power dissipation: 30kW
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 30kW; 312.8V; 65.3A; unidirectional; R6; bulk
Mounting: THT
Case: R6
Max. off-state voltage: 280V
Semiconductor structure: unidirectional
Max. forward impulse current: 65.3A
Breakdown voltage: 312.8V
Leakage current: 10µA
Kind of package: bulk
Type of diode: TVS
Features of semiconductor devices: glass passivated
Peak pulse power dissipation: 30kW
товар відсутній
| 30KP280A |
|
Виробник: CDIL
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 30kW; 312.8V; 65.3A; unidirectional; R6; bulk
Mounting: THT
Case: R6
Max. off-state voltage: 280V
Semiconductor structure: unidirectional
Max. forward impulse current: 65.3A
Breakdown voltage: 312.8V
Leakage current: 10µA
Kind of package: bulk
Type of diode: TVS
Features of semiconductor devices: glass passivated
Peak pulse power dissipation: 30kW
кількість в упаковці: 1 шт
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 30kW; 312.8V; 65.3A; unidirectional; R6; bulk
Mounting: THT
Case: R6
Max. off-state voltage: 280V
Semiconductor structure: unidirectional
Max. forward impulse current: 65.3A
Breakdown voltage: 312.8V
Leakage current: 10µA
Kind of package: bulk
Type of diode: TVS
Features of semiconductor devices: glass passivated
Peak pulse power dissipation: 30kW
кількість в упаковці: 1 шт
товар відсутній
| 30KP288A |
|
Виробник: CDIL
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 30kW; 321.7V; 64.5A; unidirectional; R6; bulk
Mounting: THT
Breakdown voltage: 321.7V
Max. forward impulse current: 64.5A
Semiconductor structure: unidirectional
Kind of package: bulk
Type of diode: TVS
Max. off-state voltage: 288V
Features of semiconductor devices: glass passivated
Leakage current: 10µA
Peak pulse power dissipation: 30kW
Case: R6
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 30kW; 321.7V; 64.5A; unidirectional; R6; bulk
Mounting: THT
Breakdown voltage: 321.7V
Max. forward impulse current: 64.5A
Semiconductor structure: unidirectional
Kind of package: bulk
Type of diode: TVS
Max. off-state voltage: 288V
Features of semiconductor devices: glass passivated
Leakage current: 10µA
Peak pulse power dissipation: 30kW
Case: R6
товар відсутній
| 30KP288A |
|
Виробник: CDIL
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 30kW; 321.7V; 64.5A; unidirectional; R6; bulk
Mounting: THT
Breakdown voltage: 321.7V
Max. forward impulse current: 64.5A
Semiconductor structure: unidirectional
Kind of package: bulk
Type of diode: TVS
Max. off-state voltage: 288V
Features of semiconductor devices: glass passivated
Leakage current: 10µA
Peak pulse power dissipation: 30kW
Case: R6
кількість в упаковці: 1 шт
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 30kW; 321.7V; 64.5A; unidirectional; R6; bulk
Mounting: THT
Breakdown voltage: 321.7V
Max. forward impulse current: 64.5A
Semiconductor structure: unidirectional
Kind of package: bulk
Type of diode: TVS
Max. off-state voltage: 288V
Features of semiconductor devices: glass passivated
Leakage current: 10µA
Peak pulse power dissipation: 30kW
Case: R6
кількість в упаковці: 1 шт
товар відсутній
| 30KP288CA |
|
Виробник: CDIL
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 321.7V; 64.5A; bidirectional; R6; 30kW; bulk
Mounting: THT
Breakdown voltage: 321.7V
Max. forward impulse current: 64.5A
Semiconductor structure: bidirectional
Kind of package: bulk
Type of diode: TVS
Max. off-state voltage: 288V
Features of semiconductor devices: glass passivated
Leakage current: 10µA
Peak pulse power dissipation: 30kW
Case: R6
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 321.7V; 64.5A; bidirectional; R6; 30kW; bulk
Mounting: THT
Breakdown voltage: 321.7V
Max. forward impulse current: 64.5A
Semiconductor structure: bidirectional
Kind of package: bulk
Type of diode: TVS
Max. off-state voltage: 288V
Features of semiconductor devices: glass passivated
Leakage current: 10µA
Peak pulse power dissipation: 30kW
Case: R6
товар відсутній
| 30KP288CA |
|
Виробник: CDIL
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 321.7V; 64.5A; bidirectional; R6; 30kW; bulk
Mounting: THT
Breakdown voltage: 321.7V
Max. forward impulse current: 64.5A
Semiconductor structure: bidirectional
Kind of package: bulk
Type of diode: TVS
Max. off-state voltage: 288V
Features of semiconductor devices: glass passivated
Leakage current: 10µA
Peak pulse power dissipation: 30kW
Case: R6
кількість в упаковці: 1 шт
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 321.7V; 64.5A; bidirectional; R6; 30kW; bulk
Mounting: THT
Breakdown voltage: 321.7V
Max. forward impulse current: 64.5A
Semiconductor structure: bidirectional
Kind of package: bulk
Type of diode: TVS
Max. off-state voltage: 288V
Features of semiconductor devices: glass passivated
Leakage current: 10µA
Peak pulse power dissipation: 30kW
Case: R6
кількість в упаковці: 1 шт
товар відсутній
| 30KP28A |
|
Виробник: CDIL
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 30kW; 31.3V; 606A; unidirectional; R6; bulk
Type of diode: TVS
Peak pulse power dissipation: 30kW
Max. off-state voltage: 28V
Breakdown voltage: 31.3V
Max. forward impulse current: 606A
Semiconductor structure: unidirectional
Case: R6
Mounting: THT
Leakage current: 5mA
Kind of package: bulk
Features of semiconductor devices: glass passivated
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 30kW; 31.3V; 606A; unidirectional; R6; bulk
Type of diode: TVS
Peak pulse power dissipation: 30kW
Max. off-state voltage: 28V
Breakdown voltage: 31.3V
Max. forward impulse current: 606A
Semiconductor structure: unidirectional
Case: R6
Mounting: THT
Leakage current: 5mA
Kind of package: bulk
Features of semiconductor devices: glass passivated
товар відсутній