Продукція > EPC SPACE, LLC > Всі товари виробника EPC SPACE, LLC (40) > Сторінка 1 з 1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| CDA04N30X1C | EPC Space, LLC |
Description: GANFET 40V 30A .004 OHM 4DAPT Packaging: Tray |
товар відсутній |
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| CDA10N30X1C | EPC Space, LLC |
Description: GANFET 100V 30A .009 OHM 4DAPT Packaging: Tray |
на замовлення 100 шт: термін постачання 21-31 дні (днів) |
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| EPC7001BC | EPC Space, LLC |
Description: GAN FET HEMT 40V30A COTS 4FSMD-B Packaging: Bulk |
на замовлення 150 шт: термін постачання 21-31 дні (днів) |
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| EPC7001BSH | EPC Space, LLC |
Description: GAN FET HEMT 40V 30A 4FSMD-B Packaging: Bulk |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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| EPC7002AC | EPC Space, LLC |
Description: GAN FET HEMT 40V 8A COTS 4FSMD-A Packaging: Bulk |
на замовлення 150 шт: термін постачання 21-31 дні (днів) |
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| EPC7002ASH | EPC Space, LLC |
Description: GAN FET HEMT 40V 8A 4FSMD-A Packaging: Bulk |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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| EPC7003AC | EPC Space, LLC |
 Description: GAN FET HEMT 100V 5A COTS 4UBPackaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 10A, 5V Vgs(th) (Max) @ Id: 2.5V @ 1.4mA Supplier Device Package: 4-SMD Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 168 pF @ 50 V |
на замовлення 144 шт: термін постачання 21-31 дні (днів) |
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| EPC7004BC | EPC Space, LLC |
Description: GAN FET HEMT100V30A COTS 4FSMD-B Packaging: Tray Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 30A, 5V Vgs(th) (Max) @ Id: 2.5V @ 7mA Supplier Device Package: 4-SMD Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 797 pF @ 50 V |
на замовлення 73 шт: термін постачання 21-31 дні (днів) |
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| EPC7007BC | EPC Space, LLC |
Description: GAN FET HEMT200V18A COTS 4FSMD-B Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 18A, 5V Vgs(th) (Max) @ Id: 2.5V @ 3mA Supplier Device Package: 4-SMD Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 525 pF @ 100 V |
на замовлення 105 шт: термін постачання 21-31 дні (днів) |
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| EPC7007BSH | EPC Space, LLC |
Description: GAN FET HEMT 200V 18A 4UB Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 18A, 5V Vgs(th) (Max) @ Id: 2.5V @ 3mA Supplier Device Package: 4-SMD Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 525 pF @ 100 V |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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EPC7014UBC | EPC Space, LLC |
Description: GAN FET HEMT 60V 1A COTS 4UB Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Rds On (Max) @ Id, Vgs: 580mOhm @ 1A, 5V Vgs(th) (Max) @ Id: 2.5V @ 140µA Supplier Device Package: 4-SMD Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +7V, -4V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 30 V |
на замовлення 82 шт: термін постачання 21-31 дні (днів) |
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| EPC7014UBSH | EPC Space, LLC |
Description: GAN FET HEMT 60V 1A 4UB Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Rds On (Max) @ Id, Vgs: 580mOhm @ 1A, 5V Vgs(th) (Max) @ Id: 2.5V @ 140µA Supplier Device Package: 4-SMD Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 30 V |
на замовлення 25 шт: термін постачання 21-31 дні (днів) |
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| EPC7018DC | EPC Space, LLC |
Description: GAN FET HEMT 100V 74A COTS 4UD Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 50V Rds On (Max) @ Id, Vgs: 6.5mOhm @ 70A, 5V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 5mA Supplier Device Package: 4-SMD |
на замовлення 100 шт: термін постачання 21-31 дні (днів) |
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EPC7018GC | EPC Space, LLC |
Description: GAN FET HEMT 100V 90A COTS 5UB Packaging: Bulk Package / Case: 5-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 40A, 5V Vgs(th) (Max) @ Id: 2.5V @ 12mA Supplier Device Package: 5-SMD Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 50 V |
на замовлення 73 шт: термін постачання 21-31 дні (днів) |
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| EPC7019DC | EPC Space, LLC |
Description: GAN FET HEMT 40V 80A COTS 4UD Packaging: Bulk |
на замовлення 100 шт: термін постачання 21-31 дні (днів) |
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EPC7019GC | EPC Space, LLC |
Description: GAN FET HEMT 40V 95A COTS 5UB Packaging: Bulk Package / Case: 5-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 5V Vgs(th) (Max) @ Id: 2.5V @ 18mA Supplier Device Package: 5-SMD Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 40 V Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 20 V |
на замовлення 95 шт: термін постачання 21-31 дні (днів) |
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EPC7020GC | EPC Space, LLC |
Description: GAN FET HEMT 200V 80A COTS 5UB Packaging: Bulk Package / Case: 5-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 14.5mOhm @ 30A, 5V Vgs(th) (Max) @ Id: 2.5V @ 7mA Supplier Device Package: 5-SMD Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 200 V Input Capacitance (Ciss) (Max) @ Vds: 1313 pF @ 100 V |
на замовлення 10 шт: термін постачання 21-31 дні (днів) |
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| EPC7020GSH | EPC Space, LLC |
Description: GAN FET HEMT 200V 80A 5UB Packaging: Bulk Package / Case: 5-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 14.5mOhm @ 30A, 5V Vgs(th) (Max) @ Id: 2.5V @ 7mA Supplier Device Package: 5-SMD Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 100 V Input Capacitance (Ciss) (Max) @ Vds: 1313 pF @ 100 V |
товар відсутній |
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EPC7C001 | EPC Space, LLC |
Description: BD DEMO FBG04N30/GAM01P-C-PSE Packaging: Box Function: Gate Driver Type: Power Management Utilized IC / Part: FBG04N30 Supplied Contents: Board(s) Embedded: No Part Status: Active |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
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EPC7C002 | EPC Space, LLC |
Description: BD DEMO FBG10N30/GAM01P-C-PSE Packaging: Box Function: Gate Driver Type: Power Management Utilized IC / Part: FBG10N30 Supplied Contents: Board(s) Embedded: No Part Status: Active |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
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EPC7C003 | EPC Space, LLC |
Description: BD DEMO FBG20N18/GAM01P-C-PSE Packaging: Box Function: Gate Driver Type: Power Management Utilized IC / Part: FBG20N18 Supplied Contents: Board(s) Embedded: No Part Status: Active |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
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.jpg "FBG04N08AC") |
FBG04N08AC | EPC Space, LLC |
Description: GAN FET HEMT 40V 8A 4FSMD-A Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 8A, 5V Vgs(th) (Max) @ Id: 2.5V @ 2mA Supplier Device Package: 4-SMD Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 20 V |
на замовлення 164 шт: термін постачання 21-31 дні (днів) |
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| FBG04N08ASH | EPC Space, LLC |
Description: GAN FET HEMT 40V 8A 4FSMD-A Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 8A, 5V Vgs(th) (Max) @ Id: 2.5V @ 2mA Supplier Device Package: 4-SMD Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 20 V |
товар відсутній |
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.jpg "FBG04N30BC") |
FBG04N30BC | EPC Space, LLC |
Description: GAN FET HEMT 40V30A COTS 4FSMD-B Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 5V Vgs(th) (Max) @ Id: 2.5V @ 9mA Supplier Device Package: 4-SMD Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 11.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 20 V |
на замовлення 141 шт: термін постачання 21-31 дні (днів) |
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FBG04N30BSH | EPC Space, LLC |
Description: GAN FET HEMT 40V 30A 4FSMD-B Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 5V Vgs(th) (Max) @ Id: 2.5V @ 9mA Supplier Device Package: 4-SMD Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 11.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 20 V Packaging: Bulk |
на замовлення 20 шт: термін постачання 21-31 дні (днів) |
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FBG10N05AC | EPC Space, LLC |
Description: GAN FET HEMT 100V5A COTS 4FSMD-A Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 5A, 5V Vgs(th) (Max) @ Id: 2.5V @ 1.2mA Supplier Device Package: 4-SMD Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 233 pF @ 50 V |
на замовлення 48 шт: термін постачання 21-31 дні (днів) |
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| FBG10N05ASH | EPC Space, LLC |
Description: GAN FET HEMT 100V 5A 4FSMD-A Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 5V Vgs(th) (Max) @ Id: 2.5V @ 1.2mA Supplier Device Package: 4-SMD Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 233 pF @ 50 V Packaging: Bulk |
на замовлення 49 шт: термін постачання 21-31 дні (днів) |
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FBG10N30BC | EPC Space, LLC |
Description: GAN FET HEMT100V30A COTS 4FSMD-B Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 5V Vgs(th) (Max) @ Id: 2.5V @ 5mA Supplier Device Package: 4-SMD Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V Packaging: Bulk |
на замовлення 181 шт: термін постачання 21-31 дні (днів) |
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| FBG10N30BSH | EPC Space, LLC |
Description: GAN FET HEMT 100V 30A 4FSMD-B Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 30A, 5V Vgs(th) (Max) @ Id: 2.5V @ 5mA Supplier Device Package: 4-SMD Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V Packaging: Bulk |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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| FBG20N04AC | EPC Space, LLC |
Description: MOSFET 200V 4A 4SMD Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 100V Rds On (Max) @ Id, Vgs: 130mOhm @ 4A, 5V Gate Charge (Qg) (Max) @ Vgs: 3nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: 4-SMD Part Status: Active Packaging: Bulk |
на замовлення 330 шт: термін постачання 21-31 дні (днів) |
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| FBG20N04ASH | EPC Space, LLC |
Description: GAN FET HEMT 200V 4A 4FSMD-A Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 4A, 5V Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: 4-SMD Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 100 V Packaging: Bulk |
на замовлення 25 шт: термін постачання 21-31 дні (днів) |
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FBG20N18BC | EPC Space, LLC |
Description: GAN FET HEMT200V18A COTS 4FSMD-B Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 18A, 5V Vgs(th) (Max) @ Id: 2.5V @ 3mA Supplier Device Package: 4-SMD Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V |
на замовлення 62 шт: термін постачання 21-31 дні (днів) |
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FBG20N18BSH | EPC Space, LLC |
Description: GAN FET HEMT 200V 18A 4FSMD-B Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 18A, 5V Vgs(th) (Max) @ Id: 2.5V @ 3mA Supplier Device Package: 4-SMD Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V Packaging: Bulk |
на замовлення 51 шт: термін постачання 21-31 дні (днів) |
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.jpg "FBG30N04CC") |
FBG30N04CC | EPC Space, LLC |
Description: GAN FET HEMT 300V4A COTS 4FSMD-C Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 404mOhm @ 4A, 5V Vgs(th) (Max) @ Id: 2.8V @ 600µA Supplier Device Package: 4-SMD Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 2.6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 150 V |
на замовлення 27 шт: термін постачання 21-31 дні (днів) |
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| FBG30N04CSH | EPC Space, LLC |
Description: GANFET 2N-CH 300V 4A 4SMD Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 150V Rds On (Max) @ Id, Vgs: 404mOhm @ 4A, 5V Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 5V Vgs(th) (Max) @ Id: 2.8V @ 600µA Supplier Device Package: 4-SMD |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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.jpg "FBS-GAM02-P-C50") |
FBS-GAM02-P-C50 | EPC Space, LLC |
Description: 50V 10A HALF BRIDGE Packaging: Bulk Package / Case: 18-SMD Module Mounting Type: Surface Mount Type: MOSFET Configuration: 3 Phase Current: 10 A Voltage: 50 V |
товар відсутній |
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FBS-GAM02P-C-PSE | EPC Space, LLC |
Description: DUAL HIGH & LOW SIDE DRIVER Packaging: Bulk Package / Case: 18-SMD Module Mounting Type: Surface Mount Configuration: 3 Phase Part Status: Active Voltage: 50 V |
на замовлення 12 шт: термін постачання 21-31 дні (днів) |
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| FBS-GAM02P-R-PSE | EPC Space, LLC |
Description: GAN DUAL HI/LO SIDE DRIVER 18SMT Packaging: Bulk Package / Case: 18-SMD Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 130°C (TJ) Voltage - Supply: 4.5V ~ 5.5V, 5V ~ 50V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 100 V Rise / Fall Time (Typ): 35ns, 22ns Channel Type: Independent Driven Configuration: High-Side and Low-Side Number of Drivers: 2 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2.9V |
на замовлення 41 шт: термін постачання 21-31 дні (днів) |
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 |
FBS-GAM04-P-C100 | EPC Space, LLC |
Description: 100V 5A DUAL LOW SIDE DRIVER Packaging: Bulk Package / Case: 18-SMD Module Mounting Type: Surface Mount Type: MOSFET Configuration: 3 Phase Current: 10 A Voltage: 100 V |
на замовлення 15 шт: термін постачання 21-31 дні (днів) |
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FBS-GAM04-P-C50 | EPC Space, LLC |
Description: 50V 10A DUAL LOW SIDE DRIVER Packaging: Bulk Package / Case: 18-SMD Module Mounting Type: Surface Mount Type: MOSFET Configuration: 3 Phase Current: 10 A Voltage: 50 V |
на замовлення 15 шт: термін постачання 21-31 дні (днів) |
|
| CDA04N30X1C |
товар відсутній
| EPC7001BC |
на замовлення 150 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 22250.7 грн |
| 10+ | 20068.76 грн |
| EPC7001BSH |
на замовлення 50 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 30931.69 грн |
| 10+ | 28666.39 грн |
| EPC7002AC |
на замовлення 150 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 22250.7 грн |
| 10+ | 20068.76 грн |
| EPC7002ASH |
на замовлення 50 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 30931.69 грн |
| 10+ | 28666.39 грн |
| EPC7003AC |
|
Виробник: EPC Space, LLC
Description: GAN FET HEMT 100V 5A COTS 4UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 10A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 1.4mA
Supplier Device Package: 4-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 168 pF @ 50 V
Description: GAN FET HEMT 100V 5A COTS 4UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 10A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 1.4mA
Supplier Device Package: 4-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 168 pF @ 50 V
на замовлення 144 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 21871.69 грн |
| 10+ | 19726.8 грн |
| EPC7004BC |
|
Виробник: EPC Space, LLC
Description: GAN FET HEMT100V30A COTS 4FSMD-B
Packaging: Tray
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: 4-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 797 pF @ 50 V
Description: GAN FET HEMT100V30A COTS 4FSMD-B
Packaging: Tray
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: 4-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 797 pF @ 50 V
на замовлення 73 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 21871.69 грн |
| 10+ | 19726.8 грн |
| 25+ | 18985.15 грн |
| EPC7007BC |
|
Виробник: EPC Space, LLC
Description: GAN FET HEMT200V18A COTS 4FSMD-B
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 18A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Supplier Device Package: 4-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 525 pF @ 100 V
Description: GAN FET HEMT200V18A COTS 4FSMD-B
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 18A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Supplier Device Package: 4-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 525 pF @ 100 V
на замовлення 105 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 21871.69 грн |
| 10+ | 19726.8 грн |
| EPC7007BSH |
|
Виробник: EPC Space, LLC
Description: GAN FET HEMT 200V 18A 4UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 18A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Supplier Device Package: 4-SMD
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 525 pF @ 100 V
Description: GAN FET HEMT 200V 18A 4UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 18A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Supplier Device Package: 4-SMD
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 525 pF @ 100 V
на замовлення 50 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 29877.26 грн |
| 10+ | 27689.14 грн |
| EPC7014UBC |
|
Виробник: EPC Space, LLC
Description: GAN FET HEMT 60V 1A COTS 4UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 580mOhm @ 1A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 140µA
Supplier Device Package: 4-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +7V, -4V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 30 V
Description: GAN FET HEMT 60V 1A COTS 4UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 580mOhm @ 1A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 140µA
Supplier Device Package: 4-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +7V, -4V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 30 V
на замовлення 82 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 13279.19 грн |
| 10+ | 11976.77 грн |
| EPC7014UBSH |
Виробник: EPC Space, LLC
Description: GAN FET HEMT 60V 1A 4UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 580mOhm @ 1A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 140µA
Supplier Device Package: 4-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 30 V
Description: GAN FET HEMT 60V 1A 4UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 580mOhm @ 1A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 140µA
Supplier Device Package: 4-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 30 V
на замовлення 25 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 19792.33 грн |
| 10+ | 18254.15 грн |
| EPC7018DC |
Виробник: EPC Space, LLC
Description: GAN FET HEMT 100V 74A COTS 4UD
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 50V
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 70A, 5V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 5mA
Supplier Device Package: 4-SMD
Description: GAN FET HEMT 100V 74A COTS 4UD
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 50V
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 70A, 5V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 5mA
Supplier Device Package: 4-SMD
на замовлення 100 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 22250.7 грн |
| 10+ | 20068.76 грн |
| EPC7018GC |
|
Виробник: EPC Space, LLC
Description: GAN FET HEMT 100V 90A COTS 5UB
Packaging: Bulk
Package / Case: 5-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 40A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 12mA
Supplier Device Package: 5-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 50 V
Description: GAN FET HEMT 100V 90A COTS 5UB
Packaging: Bulk
Package / Case: 5-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 40A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 12mA
Supplier Device Package: 5-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 50 V
на замовлення 73 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 21871.69 грн |
| 10+ | 19726.8 грн |
| EPC7019DC |
на замовлення 100 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 22250.7 грн |
| 10+ | 20068.76 грн |
| EPC7019GC |
|
Виробник: EPC Space, LLC
Description: GAN FET HEMT 40V 95A COTS 5UB
Packaging: Bulk
Package / Case: 5-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 18mA
Supplier Device Package: 5-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 20 V
Description: GAN FET HEMT 40V 95A COTS 5UB
Packaging: Bulk
Package / Case: 5-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 18mA
Supplier Device Package: 5-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 20 V
на замовлення 95 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 21871.69 грн |
| 10+ | 19726.8 грн |
| EPC7020GC |
|
Виробник: EPC Space, LLC
Description: GAN FET HEMT 200V 80A COTS 5UB
Packaging: Bulk
Package / Case: 5-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: 5-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 1313 pF @ 100 V
Description: GAN FET HEMT 200V 80A COTS 5UB
Packaging: Bulk
Package / Case: 5-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: 5-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 1313 pF @ 100 V
на замовлення 10 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 21871.69 грн |
| 10+ | 19726.8 грн |
| EPC7020GSH |
|
Виробник: EPC Space, LLC
Description: GAN FET HEMT 200V 80A 5UB
Packaging: Bulk
Package / Case: 5-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: 5-SMD
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 100 V
Input Capacitance (Ciss) (Max) @ Vds: 1313 pF @ 100 V
Description: GAN FET HEMT 200V 80A 5UB
Packaging: Bulk
Package / Case: 5-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: 5-SMD
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 100 V
Input Capacitance (Ciss) (Max) @ Vds: 1313 pF @ 100 V
товар відсутній
| EPC7C001 |
Виробник: EPC Space, LLC
Description: BD DEMO FBG04N30/GAM01P-C-PSE
Packaging: Box
Function: Gate Driver
Type: Power Management
Utilized IC / Part: FBG04N30
Supplied Contents: Board(s)
Embedded: No
Part Status: Active
Description: BD DEMO FBG04N30/GAM01P-C-PSE
Packaging: Box
Function: Gate Driver
Type: Power Management
Utilized IC / Part: FBG04N30
Supplied Contents: Board(s)
Embedded: No
Part Status: Active
на замовлення 5 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 108834.95 грн |
| EPC7C002 |
Виробник: EPC Space, LLC
Description: BD DEMO FBG10N30/GAM01P-C-PSE
Packaging: Box
Function: Gate Driver
Type: Power Management
Utilized IC / Part: FBG10N30
Supplied Contents: Board(s)
Embedded: No
Part Status: Active
Description: BD DEMO FBG10N30/GAM01P-C-PSE
Packaging: Box
Function: Gate Driver
Type: Power Management
Utilized IC / Part: FBG10N30
Supplied Contents: Board(s)
Embedded: No
Part Status: Active
на замовлення 5 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 108834.95 грн |
| EPC7C003 |
|
Виробник: EPC Space, LLC
Description: BD DEMO FBG20N18/GAM01P-C-PSE
Packaging: Box
Function: Gate Driver
Type: Power Management
Utilized IC / Part: FBG20N18
Supplied Contents: Board(s)
Embedded: No
Part Status: Active
Description: BD DEMO FBG20N18/GAM01P-C-PSE
Packaging: Box
Function: Gate Driver
Type: Power Management
Utilized IC / Part: FBG20N18
Supplied Contents: Board(s)
Embedded: No
Part Status: Active
на замовлення 5 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 101902.25 грн |
| FBG04N08AC |
Виробник: EPC Space, LLC
Description: GAN FET HEMT 40V 8A 4FSMD-A
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 8A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: 4-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 20 V
Description: GAN FET HEMT 40V 8A 4FSMD-A
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 8A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: 4-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 20 V
на замовлення 164 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 19593.24 грн |
| 10+ | 17671.48 грн |
| FBG04N08ASH |
Виробник: EPC Space, LLC
Description: GAN FET HEMT 40V 8A 4FSMD-A
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 8A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: 4-SMD
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 20 V
Description: GAN FET HEMT 40V 8A 4FSMD-A
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 8A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: 4-SMD
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 20 V
товар відсутній
| FBG04N30BC |
|
Виробник: EPC Space, LLC
Description: GAN FET HEMT 40V30A COTS 4FSMD-B
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 9mA
Supplier Device Package: 4-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 11.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 20 V
Description: GAN FET HEMT 40V30A COTS 4FSMD-B
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 9mA
Supplier Device Package: 4-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 11.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 20 V
на замовлення 141 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 19593.24 грн |
| 10+ | 17671.48 грн |
| FBG04N30BSH |
Виробник: EPC Space, LLC
Description: GAN FET HEMT 40V 30A 4FSMD-B
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 9mA
Supplier Device Package: 4-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 11.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 20 V
Packaging: Bulk
Description: GAN FET HEMT 40V 30A 4FSMD-B
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 9mA
Supplier Device Package: 4-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 11.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 20 V
Packaging: Bulk
на замовлення 20 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 26492.76 грн |
| 10+ | 24552.54 грн |
| FBG10N05AC |
|
Виробник: EPC Space, LLC
Description: GAN FET HEMT 100V5A COTS 4FSMD-A
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 5A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 1.2mA
Supplier Device Package: 4-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 233 pF @ 50 V
Description: GAN FET HEMT 100V5A COTS 4FSMD-A
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 5A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 1.2mA
Supplier Device Package: 4-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 233 pF @ 50 V
на замовлення 48 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 19866.8 грн |
| 10+ | 17918.36 грн |
| FBG10N05ASH |
|
Виробник: EPC Space, LLC
Description: GAN FET HEMT 100V 5A 4FSMD-A
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 1.2mA
Supplier Device Package: 4-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 233 pF @ 50 V
Packaging: Bulk
Description: GAN FET HEMT 100V 5A 4FSMD-A
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 1.2mA
Supplier Device Package: 4-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 233 pF @ 50 V
Packaging: Bulk
на замовлення 49 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 27115.09 грн |
| 10+ | 25129.61 грн |
| FBG10N30BC |
|
Виробник: EPC Space, LLC
Description: GAN FET HEMT100V30A COTS 4FSMD-B
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5mA
Supplier Device Package: 4-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V
Packaging: Bulk
Description: GAN FET HEMT100V30A COTS 4FSMD-B
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5mA
Supplier Device Package: 4-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V
Packaging: Bulk
на замовлення 181 шт:
термін постачання 21-31 дні (днів)| FBG10N30BSH |
Виробник: EPC Space, LLC
Description: GAN FET HEMT 100V 30A 4FSMD-B
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5mA
Supplier Device Package: 4-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V
Packaging: Bulk
Description: GAN FET HEMT 100V 30A 4FSMD-B
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5mA
Supplier Device Package: 4-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V
Packaging: Bulk
на замовлення 50 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 26469.16 грн |
| 10+ | 24531.1 грн |
| FBG20N04AC |
|
Виробник: EPC Space, LLC
Description: MOSFET 200V 4A 4SMD
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 100V
Rds On (Max) @ Id, Vgs: 130mOhm @ 4A, 5V
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: 4-SMD
Part Status: Active
Packaging: Bulk
Description: MOSFET 200V 4A 4SMD
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 100V
Rds On (Max) @ Id, Vgs: 130mOhm @ 4A, 5V
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: 4-SMD
Part Status: Active
Packaging: Bulk
на замовлення 330 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 19866.8 грн |
| 10+ | 17918.36 грн |
| FBG20N04ASH |
|
Виробник: EPC Space, LLC
Description: GAN FET HEMT 200V 4A 4FSMD-A
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 4A, 5V
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: 4-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 100 V
Packaging: Bulk
Description: GAN FET HEMT 200V 4A 4FSMD-A
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 4A, 5V
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: 4-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 100 V
Packaging: Bulk
на замовлення 25 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 27115.09 грн |
| 10+ | 25129.61 грн |
| FBG20N18BC |
|
Виробник: EPC Space, LLC
Description: GAN FET HEMT200V18A COTS 4FSMD-B
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 18A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Supplier Device Package: 4-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
Description: GAN FET HEMT200V18A COTS 4FSMD-B
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 18A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Supplier Device Package: 4-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
на замовлення 62 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 19866.8 грн |
| 10+ | 17918.36 грн |
| FBG20N18BSH |
Виробник: EPC Space, LLC
Description: GAN FET HEMT 200V 18A 4FSMD-B
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 18A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Supplier Device Package: 4-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
Packaging: Bulk
Description: GAN FET HEMT 200V 18A 4FSMD-B
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 18A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Supplier Device Package: 4-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
Packaging: Bulk
на замовлення 51 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 27115.09 грн |
| 10+ | 25129.61 грн |
| FBG30N04CC |
Виробник: EPC Space, LLC
Description: GAN FET HEMT 300V4A COTS 4FSMD-C
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 404mOhm @ 4A, 5V
Vgs(th) (Max) @ Id: 2.8V @ 600µA
Supplier Device Package: 4-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 2.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 150 V
Description: GAN FET HEMT 300V4A COTS 4FSMD-C
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 404mOhm @ 4A, 5V
Vgs(th) (Max) @ Id: 2.8V @ 600µA
Supplier Device Package: 4-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 2.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 150 V
на замовлення 27 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 21655.65 грн |
| 10+ | 19531.61 грн |
| FBG30N04CSH |
Виробник: EPC Space, LLC
Description: GANFET 2N-CH 300V 4A 4SMD
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 300V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 150V
Rds On (Max) @ Id, Vgs: 404mOhm @ 4A, 5V
Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 5V
Vgs(th) (Max) @ Id: 2.8V @ 600µA
Supplier Device Package: 4-SMD
Description: GANFET 2N-CH 300V 4A 4SMD
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 300V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 150V
Rds On (Max) @ Id, Vgs: 404mOhm @ 4A, 5V
Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 5V
Vgs(th) (Max) @ Id: 2.8V @ 600µA
Supplier Device Package: 4-SMD
на замовлення 50 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 28322.16 грн |
| 10+ | 26247.8 грн |
| FBS-GAM02-P-C50 |
Виробник: EPC Space, LLC
Description: 50V 10A HALF BRIDGE
Packaging: Bulk
Package / Case: 18-SMD Module
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase
Current: 10 A
Voltage: 50 V
Description: 50V 10A HALF BRIDGE
Packaging: Bulk
Package / Case: 18-SMD Module
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase
Current: 10 A
Voltage: 50 V
товар відсутній
| FBS-GAM02P-C-PSE |
Виробник: EPC Space, LLC
Description: DUAL HIGH & LOW SIDE DRIVER
Packaging: Bulk
Package / Case: 18-SMD Module
Mounting Type: Surface Mount
Configuration: 3 Phase
Part Status: Active
Voltage: 50 V
Description: DUAL HIGH & LOW SIDE DRIVER
Packaging: Bulk
Package / Case: 18-SMD Module
Mounting Type: Surface Mount
Configuration: 3 Phase
Part Status: Active
Voltage: 50 V
на замовлення 12 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 46719.39 грн |
| FBS-GAM02P-R-PSE |
Виробник: EPC Space, LLC
Description: GAN DUAL HI/LO SIDE DRIVER 18SMT
Packaging: Bulk
Package / Case: 18-SMD Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 130°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V, 5V ~ 50V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 100 V
Rise / Fall Time (Typ): 35ns, 22ns
Channel Type: Independent
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Description: GAN DUAL HI/LO SIDE DRIVER 18SMT
Packaging: Bulk
Package / Case: 18-SMD Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 130°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V, 5V ~ 50V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 100 V
Rise / Fall Time (Typ): 35ns, 22ns
Channel Type: Independent
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.9V
на замовлення 41 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 51524.06 грн |
| 10+ | 47884.93 грн |
| FBS-GAM04-P-C100 |
|
Виробник: EPC Space, LLC
Description: 100V 5A DUAL LOW SIDE DRIVER
Packaging: Bulk
Package / Case: 18-SMD Module
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase
Current: 10 A
Voltage: 100 V
Description: 100V 5A DUAL LOW SIDE DRIVER
Packaging: Bulk
Package / Case: 18-SMD Module
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase
Current: 10 A
Voltage: 100 V
на замовлення 15 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 47494.36 грн |
| 12+ | 44139.88 грн |
| FBS-GAM04-P-C50 |
|
Виробник: EPC Space, LLC
Description: 50V 10A DUAL LOW SIDE DRIVER
Packaging: Bulk
Package / Case: 18-SMD Module
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase
Current: 10 A
Voltage: 50 V
Description: 50V 10A DUAL LOW SIDE DRIVER
Packaging: Bulk
Package / Case: 18-SMD Module
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase
Current: 10 A
Voltage: 50 V
на замовлення 15 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 47494.36 грн |
| 12+ | 44139.88 грн |