Продукція > CUH
Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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CUH-41-30010 | TE Connectivity Potter & Brumfield Relays | Description: RELAY TIME DELAY 10SEC 10A 277V | товар відсутній | |||||||||||||||
CUH-41-30010 | TE Connectivity / Agastat | Time Delay & Timing Relays RELAY TIME DELAY DPDT 10A 24VDC | товар відсутній | |||||||||||||||
CUH-41-30120 | TE Connectivity Potter & Brumfield Relays | Description: RELAY TIME DELAY 120SEC 10A 277V Packaging: Bulk Delay Time: 1 Sec ~ 120 Sec Mounting Type: Socketable Function: On-Delay Circuit: DPDT (2 Form C) Termination Style: Plug In Voltage - Supply: 24VDC Contact Rating @ Voltage: 10A @ 277VAC Relay Type: Mechanical Relay Timing Adjustment Method: External Resistor Timing Initiate Method: Input Voltage Part Status: Obsolete | товар відсутній | |||||||||||||||
CUH-41-30120 | TE Connectivity / Agastat | Time Delay & Timing Relays DPDT 2 FORM C 2C/O TIME DELAY | товар відсутній | |||||||||||||||
CUH-42-30010 | TE Connectivity Potter & Brumfield Relays | Description: RELAY TIME DELAY 10SEC 10A 277V | товар відсутній | |||||||||||||||
CUH-42-30010 | TE Connectivity / Agastat | Time Delay & Timing Relays RELAY TIME DELAY DPDT 10A 24VDC | товар відсутній | |||||||||||||||
CUHD005B-F01 | N/A | 08+ | на замовлення 1582 шт: термін постачання 14-28 дні (днів) | |||||||||||||||
CUHS10F60,H3F | Toshiba Semiconductor and Storage | Description: DIODE SCHOTTKY 60V 1A US2H Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 130pF @ 0V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: US2H Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 60 V Current - Reverse Leakage @ Vr: 40 µA @ 60 V | на замовлення 20800 шт: термін постачання 21-31 дні (днів) |
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CUHS10F60,H3F | Toshiba Semiconductor and Storage | Description: DIODE SCHOTTKY 60V 1A US2H Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 130pF @ 0V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: US2H Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 60 V Current - Reverse Leakage @ Vr: 40 µA @ 60 V | на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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CUHS10F60,H3F | Toshiba | Schottky Diodes & Rectifiers Sml-Signal Schottky 1A 60V 130pF | на замовлення 23680 шт: термін постачання 21-30 дні (днів) |
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CUHS10F60H3F(A | Toshiba | Schottky Barrier Diode Silicon Epitaxial | товар відсутній | |||||||||||||||
CUHS15F30,H3F | Toshiba | Schottky Diodes & Rectifiers DIODE SINGLE 30V | на замовлення 2329 шт: термін постачання 21-30 дні (днів) |
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CUHS15F30,H3F | Toshiba Semiconductor and Storage | Description: DIODE SCHOTTKY 30V 1.5A US2H Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 170pF @ 0V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: US2H Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1.5 A Current - Reverse Leakage @ Vr: 50 µA @ 30 V | на замовлення 8650 шт: термін постачання 21-31 дні (днів) |
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CUHS15F30,H3F | Toshiba Semiconductor and Storage | Description: DIODE SCHOTTKY 30V 1.5A US2H Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 170pF @ 0V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: US2H Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1.5 A Current - Reverse Leakage @ Vr: 50 µA @ 30 V | на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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CUHS15F40,H3F | Toshiba Semiconductor and Storage | Description: DIODE SCHOTTKY 40V 1.5A US2H Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 130pF @ 0V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: US2H Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 630 mV @ 1.5 A Current - Reverse Leakage @ Vr: 50 µA @ 40 V | на замовлення 10325 шт: термін постачання 21-31 дні (днів) |
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CUHS15F40,H3F | Toshiba | Schottky Diodes & Rectifiers Small-signal Schottky barrier diode Single 40V, 1.5A, in 2 pin US2H package | на замовлення 19885 шт: термін постачання 21-30 дні (днів) |
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CUHS15F40,H3F | Toshiba Semiconductor and Storage | Description: DIODE SCHOTTKY 40V 1.5A US2H Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 130pF @ 0V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: US2H Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 630 mV @ 1.5 A Current - Reverse Leakage @ Vr: 50 µA @ 40 V | на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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CUHS15F40,H3F(A | Toshiba | Schottky Barrier Diode Silicon Epitaxial | товар відсутній | |||||||||||||||
CUHS15F60,H3F | Toshiba Semiconductor and Storage | Description: DIODE SCHOTTKY 60V 1.5A US2H Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 130pF @ 0V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: US2H Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 730 mV @ 1.5 A Current - Reverse Leakage @ Vr: 50 µA @ 60 V | товар відсутній | |||||||||||||||
CUHS15F60,H3F | Toshiba | Schottky Diodes & Rectifiers SCHOTKY VR:60V, IO:1.5A | на замовлення 5940 шт: термін постачання 21-30 дні (днів) |
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CUHS15F60,H3F | Toshiba Semiconductor and Storage | Description: DIODE SCHOTTKY 60V 1.5A US2H Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 130pF @ 0V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: US2H Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 730 mV @ 1.5 A Current - Reverse Leakage @ Vr: 50 µA @ 60 V | на замовлення 2990 шт: термін постачання 21-31 дні (днів) |
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CUHS15S30,H3F | Toshiba Semiconductor and Storage | Description: DIODE SCHOTTKY 30V 1.5A US2H Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 200pF @ 0V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: US2H Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 430 mV @ 1.5 A Current - Reverse Leakage @ Vr: 500 µA @ 30 V | на замовлення 48000 шт: термін постачання 21-31 дні (днів) |
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CUHS15S30,H3F | Toshiba Semiconductor and Storage | Description: DIODE SCHOTTKY 30V 1.5A US2H Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 200pF @ 0V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: US2H Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 430 mV @ 1.5 A Current - Reverse Leakage @ Vr: 500 µA @ 30 V | на замовлення 50513 шт: термін постачання 21-31 дні (днів) |
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CUHS15S30,H3F | Toshiba | Schottky Diodes & Rectifiers DIODE SINGLE 30V | на замовлення 63664 шт: термін постачання 21-30 дні (днів) |
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CUHS15S40,H3F | Toshiba Semiconductor and Storage | Description: DIODE SCHOTTKY 40V 1.5A US2H Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 170pF @ 0V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: US2H Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 510 mV @ 1.5 A Current - Reverse Leakage @ Vr: 200 µA @ 40 V | на замовлення 5776 шт: термін постачання 21-31 дні (днів) |
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CUHS15S40,H3F | Toshiba Semiconductor and Storage | Description: DIODE SCHOTTKY 40V 1.5A US2H Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 170pF @ 0V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: US2H Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 510 mV @ 1.5 A Current - Reverse Leakage @ Vr: 200 µA @ 40 V | на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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CUHS15S40,H3F | Toshiba | Schottky Diodes & Rectifiers DIODE SINGLE 40V | на замовлення 5961 шт: термін постачання 21-30 дні (днів) |
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CUHS15S60,H3F | Toshiba | Schottky Diodes & Rectifiers SCHOTKY VR:60V, IO:1.5A | на замовлення 5566 шт: термін постачання 21-30 дні (днів) |
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CUHS15S60,H3F | Toshiba Semiconductor and Storage | Description: DIODE SCHOTTKY 60V 1.5A US2H Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 130pF @ 0V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: US2H Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 670 mV @ 1.5 A Current - Reverse Leakage @ Vr: 450 µA @ 60 V | на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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CUHS15S60,H3F | Toshiba Semiconductor and Storage | Description: DIODE SCHOTTKY 60V 1.5A US2H Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 130pF @ 0V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: US2H Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 670 mV @ 1.5 A Current - Reverse Leakage @ Vr: 450 µA @ 60 V | на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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CUHS20F30,H3F | Toshiba Semiconductor and Storage | Description: DIODE SCHOTTKY 30V 2A US2H Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 380pF @ 0V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: US2H Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 470 mV @ 2 A Current - Reverse Leakage @ Vr: 60 µA @ 30 V | на замовлення 3303 шт: термін постачання 21-31 дні (днів) |
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CUHS20F30,H3F | Toshiba | Schottky Diodes & Rectifiers Sml-Signal Schottky 2A 30V 380pF | на замовлення 8825 шт: термін постачання 21-30 дні (днів) |
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CUHS20F30,H3F | Toshiba Semiconductor and Storage | Description: DIODE SCHOTTKY 30V 2A US2H Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 380pF @ 0V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: US2H Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 470 mV @ 2 A Current - Reverse Leakage @ Vr: 60 µA @ 30 V | товар відсутній | |||||||||||||||
CUHS20F30,H3F(A | Toshiba | Schottky Barrier Diode Silicon Epitaxial | товар відсутній | |||||||||||||||
CUHS20F40,H3F | Toshiba | Schottky Diodes & Rectifiers Sml-Signal Schottky 2A 40V 300pF | на замовлення 14786 шт: термін постачання 21-30 дні (днів) |
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CUHS20F40,H3F | Toshiba Semiconductor and Storage | Description: DIODE SCHOTTKY 40V 2A US2H Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 300pF @ 0V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: US2H Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 540 mV @ 2 A Current - Reverse Leakage @ Vr: 60 µA @ 40 V | на замовлення 27051 шт: термін постачання 21-31 дні (днів) |
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CUHS20F40,H3F | Toshiba Semiconductor and Storage | Description: DIODE SCHOTTKY 40V 2A US2H Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 300pF @ 0V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: US2H Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 540 mV @ 2 A Current - Reverse Leakage @ Vr: 60 µA @ 40 V | на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
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CUHS20F60,H3F | Toshiba Semiconductor and Storage | Description: DIODE SCHOTTKY 60V 2A US2H Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 300pF @ 0V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: US2H Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 590 mV @ 2 A Current - Reverse Leakage @ Vr: 70 µA @ 60 V | товар відсутній | |||||||||||||||
CUHS20F60,H3F | Toshiba Semiconductor and Storage | Description: DIODE SCHOTTKY 60V 2A US2H Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 300pF @ 0V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: US2H Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 590 mV @ 2 A Current - Reverse Leakage @ Vr: 70 µA @ 60 V | на замовлення 2029 шт: термін постачання 21-31 дні (днів) |
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CUHS20F60,H3F | Toshiba | Schottky Diodes & Rectifiers SCHOTKY VR=60V, IO=2A | на замовлення 16618 шт: термін постачання 21-30 дні (днів) |
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CUHS20S30,H3F | Toshiba Semiconductor and Storage | Description: DIODE SCHOTTKY 30V 2A US2H Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 390pF @ 0V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: US2H Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 410 mV @ 2 A Current - Reverse Leakage @ Vr: 500 µA @ 30 V | на замовлення 35979 шт: термін постачання 21-31 дні (днів) |
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CUHS20S30,H3F | Toshiba | Schottky Diodes & Rectifiers Sml-Signal Schottky 2A 30V 390pF | на замовлення 55191 шт: термін постачання 21-30 дні (днів) |
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CUHS20S30,H3F | Toshiba Semiconductor and Storage | Description: DIODE SCHOTTKY 30V 2A US2H Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 390pF @ 0V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: US2H Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 410 mV @ 2 A Current - Reverse Leakage @ Vr: 500 µA @ 30 V | на замовлення 38241 шт: термін постачання 21-31 дні (днів) |
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CUHS20S30,H3F(A | Toshiba | Schottky Barrier Diode Silicon Epitaxial | товар відсутній | |||||||||||||||
CUHS20S40,H3F | Toshiba | Schottky Diodes & Rectifiers Sml-Signal Schottky 2A 40V 290pF | на замовлення 26639 шт: термін постачання 21-30 дні (днів) |
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CUHS20S40,H3F | Toshiba Semiconductor and Storage | Description: DIODE SCHOTTKY 40V 2A US2H Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 290pF @ 0V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: US2H Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 470 mV @ 2 A Current - Reverse Leakage @ Vr: 300 µA @ 40 V | на замовлення 37471 шт: термін постачання 21-31 дні (днів) |
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CUHS20S40,H3F | Toshiba Semiconductor and Storage | Description: DIODE SCHOTTKY 40V 2A US2H Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 290pF @ 0V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: US2H Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 470 mV @ 2 A Current - Reverse Leakage @ Vr: 300 µA @ 40 V | на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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CUHS20S40,H3F(A | Toshiba | Schottky Barrier Diode Silicon Epitaxial | товар відсутній | |||||||||||||||
CUHS20S60,H3F | Toshiba | Rectifier Diode Small Signal Schottky Si 2A 2-Pin US-H | товар відсутній | |||||||||||||||
CUHS20S60,H3F | Toshiba Semiconductor and Storage | Description: DIODE SCHOTTKY 60V 2A US2H Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 290pF @ 0V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: US2H Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A Current - Reverse Leakage @ Vr: 650 µA @ 60 V | на замовлення 7842 шт: термін постачання 21-31 дні (днів) |
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CUHS20S60,H3F | Toshiba | Schottky Diodes & Rectifiers SCHOTKY VR=60V, IO=2A | на замовлення 16942 шт: термін постачання 21-30 дні (днів) |
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CUHS20S60,H3F | Toshiba Semiconductor and Storage | Description: DIODE SCHOTTKY 60V 2A US2H Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 290pF @ 0V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: US2H Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A Current - Reverse Leakage @ Vr: 650 µA @ 60 V | на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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CUHS20S60,H3F(T | Toshiba | CUHS20S60,H3F(T | товар відсутній | |||||||||||||||
CUHZ12V,H3F | Toshiba | Zener Diodes 12 V Zener Diode, SOD-323HE(US2H) Pd(max):1.2V | на замовлення 4475 шт: термін постачання 21-30 дні (днів) |
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CUHZ12V,H3F | Toshiba Semiconductor and Storage | Description: 12 V ZENER DIODE, SOD-323HE Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 280pF @ 1MHz Current - Peak Pulse (10/1000µs): 60A (8/20µs) Voltage - Reverse Standoff (Typ): 12V Supplier Device Package: US2H Unidirectional Channels: 1 Voltage - Breakdown (Min): 11.4V Voltage - Clamping (Max) @ Ipp: 13.6V (Typ) Power - Peak Pulse: 2100W (2.1kW) Power Line Protection: No Part Status: Active | на замовлення 9775 шт: термін постачання 21-31 дні (днів) |
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CUHZ12V,H3F | Toshiba Semiconductor and Storage | Description: 12 V ZENER DIODE, SOD-323HE Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 280pF @ 1MHz Current - Peak Pulse (10/1000µs): 60A (8/20µs) Voltage - Reverse Standoff (Typ): 12V Supplier Device Package: US2H Unidirectional Channels: 1 Voltage - Breakdown (Min): 11.4V Voltage - Clamping (Max) @ Ipp: 13.6V (Typ) Power - Peak Pulse: 2100W (2.1kW) Power Line Protection: No Part Status: Active | на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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CUHZ16V,H3F | Toshiba Semiconductor and Storage | Description: 16 V ZENER DIODE, SOD-323HE | товар відсутній | |||||||||||||||
CUHZ16V,H3F | Toshiba Semiconductor and Storage | Description: 16 V ZENER DIODE, SOD-323HE | на замовлення 1084 шт: термін постачання 21-31 дні (днів) |
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CUHZ16V,H3F | Toshiba | Zener Diodes 16 V Zener Diode, SOD-323HE(US2H) Pd(max):1.2V | на замовлення 5648 шт: термін постачання 21-30 дні (днів) |
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CUHZ20V,H3F | Toshiba Semiconductor and Storage | Description: 20 V ZENER DIODE, SOD-323HE Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 180pF @ 1MHz Current - Peak Pulse (10/1000µs): 36A (8/20µs) Voltage - Reverse Standoff (Typ): 20V Supplier Device Package: US2H Unidirectional Channels: 1 Voltage - Breakdown (Min): 18.8V Voltage - Clamping (Max) @ Ipp: 20.6V (Typ) Power - Peak Pulse: 2100W (2.1kW) Power Line Protection: No | на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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CUHZ20V,H3F | Toshiba | Zener Diodes 20 V Zener Diode, SOD-323HE(US2H) Pd(max):1.2V | на замовлення 26723 шт: термін постачання 21-30 дні (днів) |
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CUHZ20V,H3F | Toshiba Semiconductor and Storage | Description: 20 V ZENER DIODE, SOD-323HE Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 180pF @ 1MHz Current - Peak Pulse (10/1000µs): 36A (8/20µs) Voltage - Reverse Standoff (Typ): 20V Supplier Device Package: US2H Unidirectional Channels: 1 Voltage - Breakdown (Min): 18.8V Voltage - Clamping (Max) @ Ipp: 20.6V (Typ) Power - Peak Pulse: 2100W (2.1kW) Power Line Protection: No | на замовлення 11058 шт: термін постачання 21-31 дні (днів) |
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CUHZ24V,H3F | Toshiba | Zener Diodes 24 V Zener Diode, SOD-323HE(US2H) Pd(max):1.2V | на замовлення 5768 шт: термін постачання 21-30 дні (днів) |
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CUHZ24V,H3F | Toshiba Semiconductor and Storage | Description: 24 V ZENER DIODE, SOD-323HE Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 150pF @ 1MHz Current - Peak Pulse (10/1000µs): 27A (8/20µs) Voltage - Reverse Standoff (Typ): 24V Supplier Device Package: US2H Unidirectional Channels: 1 Voltage - Breakdown (Min): 22.8V Voltage - Clamping (Max) @ Ipp: 25.5V (Typ) Power - Peak Pulse: 2100W (2.1kW) Power Line Protection: No Part Status: Active | на замовлення 2900 шт: термін постачання 21-31 дні (днів) |
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CUHZ24V,H3F | Toshiba Semiconductor and Storage | Description: 24 V ZENER DIODE, SOD-323HE Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 150pF @ 1MHz Current - Peak Pulse (10/1000µs): 27A (8/20µs) Voltage - Reverse Standoff (Typ): 24V Supplier Device Package: US2H Unidirectional Channels: 1 Voltage - Breakdown (Min): 22.8V Voltage - Clamping (Max) @ Ipp: 25.5V (Typ) Power - Peak Pulse: 2100W (2.1kW) Power Line Protection: No Part Status: Active | товар відсутній | |||||||||||||||
CUHZ30V,H3F | Toshiba Semiconductor and Storage | Description: 30 V ZENER DIODE, SOD-323HE Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 125pF @ 1MHz Current - Peak Pulse (10/1000µs): 26A (8/20µs) Voltage - Reverse Standoff (Typ): 30V Supplier Device Package: US2H Unidirectional Channels: 1 Voltage - Breakdown (Min): 28V Voltage - Clamping (Max) @ Ipp: 33.8V (Typ) Power - Peak Pulse: 2100W (2.1kW) Power Line Protection: No | на замовлення 4671 шт: термін постачання 21-31 дні (днів) |
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CUHZ30V,H3F | Toshiba | Zener Diodes 30 V Zener Diode, SOD-323HE(US2H) Pd(max):1.2V | на замовлення 6633 шт: термін постачання 21-30 дні (днів) |
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CUHZ30V,H3F | Toshiba Semiconductor and Storage | Description: 30 V ZENER DIODE, SOD-323HE Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 125pF @ 1MHz Current - Peak Pulse (10/1000µs): 26A (8/20µs) Voltage - Reverse Standoff (Typ): 30V Supplier Device Package: US2H Unidirectional Channels: 1 Voltage - Breakdown (Min): 28V Voltage - Clamping (Max) @ Ipp: 33.8V (Typ) Power - Peak Pulse: 2100W (2.1kW) Power Line Protection: No | на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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CUHZ36V,H3F | Toshiba | Zener Diodes 36 V Zener Diode, SOD-323HE(US2H) Pd(max):1.2V | на замовлення 4308 шт: термін постачання 21-30 дні (днів) |
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CUHZ36V,H3F | Toshiba Semiconductor and Storage | Description: 36 V ZENER DIODE, SOD-323HE | на замовлення 5671 шт: термін постачання 21-31 дні (днів) |
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CUHZ36V,H3F | Toshiba Semiconductor and Storage | Description: 36 V ZENER DIODE, SOD-323HE | на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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CUHZ5V6,H3F | Toshiba Semiconductor and Storage | Description: 5.6 V ZENER DIODE, SOD-323HE Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 860pF @ 1MHz Current - Peak Pulse (10/1000µs): 91A (8/20µs) Voltage - Reverse Standoff (Typ): 5.6V Supplier Device Package: US2H Unidirectional Channels: 1 Voltage - Breakdown (Min): 5.3V Voltage - Clamping (Max) @ Ipp: 5.7V (Typ) Power - Peak Pulse: 1750W (1.75kW) Power Line Protection: No | товар відсутній | |||||||||||||||
CUHZ5V6,H3F | Toshiba Semiconductor and Storage | Description: 5.6 V ZENER DIODE, SOD-323HE Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 860pF @ 1MHz Current - Peak Pulse (10/1000µs): 91A (8/20µs) Voltage - Reverse Standoff (Typ): 5.6V Supplier Device Package: US2H Unidirectional Channels: 1 Voltage - Breakdown (Min): 5.3V Voltage - Clamping (Max) @ Ipp: 5.7V (Typ) Power - Peak Pulse: 1750W (1.75kW) Power Line Protection: No | на замовлення 448 шт: термін постачання 21-31 дні (днів) |
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CUHZ5V6,H3F | Toshiba | Zener Diodes 5.6 V Zener Diode, SOD-323HE(US2H) Pd(max):1.2V | на замовлення 8180 шт: термін постачання 21-30 дні (днів) |
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CUHZ6V2,H3F | Toshiba Semiconductor and Storage | Description: 6.2 V ZENER DIODE, SOD-323HE Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 735pF @ 1MHz Current - Peak Pulse (10/1000µs): 87A (8/20µs) Voltage - Reverse Standoff (Typ): 6.2V Supplier Device Package: US2H Unidirectional Channels: 1 Voltage - Breakdown (Min): 5.8V Voltage - Clamping (Max) @ Ipp: 6.1V (Typ) Power - Peak Pulse: 1800W (1.8kW) Power Line Protection: No Part Status: Active | на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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CUHZ6V2,H3F | Toshiba | Zener Diodes 6.2 V Zener Diode, SOD-323HE(US2H) Pd(max):1.2V | на замовлення 5084 шт: термін постачання 21-30 дні (днів) |
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CUHZ6V2,H3F | Toshiba Semiconductor and Storage | Description: 6.2 V ZENER DIODE, SOD-323HE Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 735pF @ 1MHz Current - Peak Pulse (10/1000µs): 87A (8/20µs) Voltage - Reverse Standoff (Typ): 6.2V Supplier Device Package: US2H Unidirectional Channels: 1 Voltage - Breakdown (Min): 5.8V Voltage - Clamping (Max) @ Ipp: 6.1V (Typ) Power - Peak Pulse: 1800W (1.8kW) Power Line Protection: No Part Status: Active | на замовлення 13485 шт: термін постачання 21-31 дні (днів) |
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CUHZ6V8,H3F | Toshiba Semiconductor and Storage | Description: 6.8 V ZENER DIODE, SOD-323HE Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 585pF @ 1MHz Current - Peak Pulse (10/1000µs): 73A (8/20µs) Voltage - Reverse Standoff (Typ): 6.8V Supplier Device Package: US2H Unidirectional Channels: 1 Voltage - Breakdown (Min): 6.4V Voltage - Clamping (Max) @ Ipp: 7.2V (Typ) Power - Peak Pulse: 1800W (1.8kW) Power Line Protection: No | на замовлення 4170 шт: термін постачання 21-31 дні (днів) |
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CUHZ6V8,H3F | Toshiba | Zener Diodes 6.8 V Zener Diode, SOD-323HE(US2H) Pd(max):1.2V | на замовлення 5790 шт: термін постачання 21-30 дні (днів) |
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CUHZ6V8,H3F | Toshiba Semiconductor and Storage | Description: 6.8 V ZENER DIODE, SOD-323HE Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 585pF @ 1MHz Current - Peak Pulse (10/1000µs): 73A (8/20µs) Voltage - Reverse Standoff (Typ): 6.8V Supplier Device Package: US2H Unidirectional Channels: 1 Voltage - Breakdown (Min): 6.4V Voltage - Clamping (Max) @ Ipp: 7.2V (Typ) Power - Peak Pulse: 1800W (1.8kW) Power Line Protection: No | на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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CUHZ8V2,H3F | Toshiba Semiconductor and Storage | Description: 8.2 V ZENER DIODE, SOD-323HE Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 450pF @ 1MHz Current - Peak Pulse (10/1000µs): 68A (8/20µs) Voltage - Reverse Standoff (Typ): 8.2V Supplier Device Package: US2H Unidirectional Channels: 1 Voltage - Breakdown (Min): 7.7V Voltage - Clamping (Max) @ Ipp: 8.5V (Typ) Power - Peak Pulse: 1900W (1.9kW) Power Line Protection: No | на замовлення 5368 шт: термін постачання 21-31 дні (днів) |
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CUHZ8V2,H3F | Toshiba Semiconductor and Storage | Description: 8.2 V ZENER DIODE, SOD-323HE Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 450pF @ 1MHz Current - Peak Pulse (10/1000µs): 68A (8/20µs) Voltage - Reverse Standoff (Typ): 8.2V Supplier Device Package: US2H Unidirectional Channels: 1 Voltage - Breakdown (Min): 7.7V Voltage - Clamping (Max) @ Ipp: 8.5V (Typ) Power - Peak Pulse: 1900W (1.9kW) Power Line Protection: No | на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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CUHZ8V2,H3F | Toshiba | Zener Diodes 8.2 V Zener Diode, SOD-323HE(US2H) Pd(max):1.2V | на замовлення 5955 шт: термін постачання 21-30 дні (днів) |
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