Продукція > NLQ
| Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| NLQ0805T-033J | TDK | 05+ | на замовлення 12010 шт: термін постачання 14-28 дні (днів) | |||||||||
| NLQ0805T-082J | на замовлення 1000 шт: термін постачання 14-28 дні (днів) | |||||||||||
| NLQ0805TL-033J | TDK | 2006 | на замовлення 20000 шт: термін постачання 14-28 дні (днів) | |||||||||
| NLQ0805TL-056J | на замовлення 1570 шт: термін постачання 14-28 дні (днів) | |||||||||||
| NLQ2003 | на замовлення 75 шт: термін постачання 14-28 дні (днів) | |||||||||||
| NLQ26PFS-6NET | Insignis Technology Corporation | Description: LPDDR4 2GB X16 3200MHZ CL22 10X1 Packaging: Tray Package / Case: 200-WFBGA Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Volatile Operating Temperature: 0°C ~ 85°C (TC) Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V Technology: SDRAM - Mobile LPDDR4 Clock Frequency: 1.6 GHz Memory Format: DRAM Supplier Device Package: 200-FBGA (10x14.5) Write Cycle Time - Word, Page: 18ns Memory Interface: LVSTL Access Time: 3.5 ns Memory Organization: 128M x 16 | товар відсутній | |||||||||
| NLQ26PFS-6NET TR | Insignis Technology Corporation | Description: LPDDR4 2GB X16 3200MHZ CL22 10X1 Packaging: Tape & Reel (TR) Package / Case: 200-WFBGA Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Volatile Operating Temperature: 0°C ~ 85°C (TC) Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V Technology: SDRAM - Mobile LPDDR4 Clock Frequency: 1.6 GHz Memory Format: DRAM Supplier Device Package: 200-FBGA (10x14.5) Write Cycle Time - Word, Page: 18ns Memory Interface: LVSTL Access Time: 3.5 ns Memory Organization: 128M x 16 | товар відсутній | |||||||||
| NLQ26PFS-6NET TR | Insignis Technology Corporation | Description: LPDDR4 2GB X16 3200MHZ CL22 10X1 Packaging: Cut Tape (CT) Package / Case: 200-WFBGA Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Volatile Operating Temperature: 0°C ~ 85°C (TC) Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V Technology: SDRAM - Mobile LPDDR4 Clock Frequency: 1.6 GHz Memory Format: DRAM Supplier Device Package: 200-FBGA (10x14.5) Write Cycle Time - Word, Page: 18ns Memory Interface: LVSTL Access Time: 3.5 ns Memory Organization: 128M x 16 | товар відсутній | |||||||||
| NLQ26PFS-8NET | Insignis Technology Corporation | Description: LPDDR4 2GB X16 2400MHZ CL16 10X1 Packaging: Tray Package / Case: 200-WFBGA Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Volatile Operating Temperature: 0°C ~ 85°C (TC) Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V Technology: SDRAM - Mobile LPDDR4 Clock Frequency: 1.2 GHz Memory Format: DRAM Supplier Device Package: 200-FBGA (10x14.5) Write Cycle Time - Word, Page: 18ns Memory Interface: LVSTL Access Time: 3.5 ns Memory Organization: 128M x 16 | товар відсутній | |||||||||
| NLQ26PFS-8NET TR | Insignis Technology Corporation | Description: LPDDR4 2GB X16 2400MHZ CL16 10X1 Packaging: Tape & Reel (TR) Package / Case: 200-WFBGA Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Volatile Operating Temperature: 0°C ~ 85°C (TC) Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V Technology: SDRAM - Mobile LPDDR4 Clock Frequency: 1.2 GHz Memory Format: DRAM Supplier Device Package: 200-FBGA (10x14.5) Write Cycle Time - Word, Page: 18ns Memory Interface: LVSTL Access Time: 3.5 ns Memory Organization: 128M x 16 | товар відсутній | |||||||||
| NLQ26PFS-8NET TR | Insignis Technology Corporation | Description: LPDDR4 2GB X16 2400MHZ CL16 10X1 Packaging: Cut Tape (CT) Package / Case: 200-WFBGA Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Volatile Operating Temperature: 0°C ~ 85°C (TC) Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V Technology: SDRAM - Mobile LPDDR4 Clock Frequency: 1.2 GHz Memory Format: DRAM Supplier Device Package: 200-FBGA (10x14.5) Write Cycle Time - Word, Page: 18ns Memory Interface: LVSTL Access Time: 3.5 ns Memory Organization: 128M x 16 | товар відсутній | |||||||||
| NLQ32K100TRF | NIC Components | Inductor Power Chip Unshielded Wirewound 10uH 10% 1MHz 0.23A 1.69Ohm DCR 1206 T/R | товар відсутній | |||||||||
| NLQ32K220TRF | NIC Components | Inductor Power Chip Unshielded Wirewound 22uH 10% 1MHz 0.16A 3.9Ohm DCR 1206 T/R | товар відсутній | |||||||||
| NLQ32M1R0TRF | NIC Components | Inductor Power Chip Unshielded Wirewound 1uH 20% 1MHz 0.51A 0.364Ohm DCR 1206 T/R | товар відсутній | |||||||||
| NLQ35K100TRF | NIC Components | Inductor Power Chip Unshielded Wirewound 10uH 10% 1MHz 0.3A 0.572Ohm DCR 1210 T/R | товар відсутній | |||||||||
| NLQ35K101TRF | NIC Components | Inductor Power Chip Unshielded Wirewound 100uH 10% 1MHz 0.1A 4.55Ohm DCR 1210 T/R | товар відсутній | |||||||||
| NLQ35K220TRF | NIC Components | Inductor Power Chip Unshielded Wirewound 22uH 10% 1MHz 0.25A 0.923Ohm DCR 1210 T/R | товар відсутній | |||||||||
| NLQ35K220TRF | NIC Components | Inductor Power Chip Unshielded Wirewound 22uH 10% 1MHz 0.25A 0.923Ohm DCR 1210 T/R | товар відсутній | |||||||||
| NLQ43PFS-6NAT | Insignis Technology Corporation | Description: LPDDR4 4GB X32 3200MHZ CL22 10X1 Packaging: Tray Package / Case: 200-WFBGA Mounting Type: Surface Mount Memory Size: 4Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 105°C (TC) Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V Technology: SDRAM - Mobile LPDDR4 Clock Frequency: 1.6 GHz Memory Format: DRAM Supplier Device Package: 200-FBGA (10x14.5) Grade: Automotive Write Cycle Time - Word, Page: 18ns Memory Interface: LVSTL Access Time: 3.5 ns Memory Organization: 128M x 32 Qualification: AEC-Q100 | товар відсутній | |||||||||
| NLQ43PFS-6NAT TR | Insignis Technology Corporation | Description: LPDDR4 4GB X32 3200MHZ CL22 10X1 Packaging: Cut Tape (CT) Package / Case: 200-WFBGA Mounting Type: Surface Mount Memory Size: 4Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 105°C (TC) Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V Technology: SDRAM - Mobile LPDDR4 Clock Frequency: 1.6 GHz Memory Format: DRAM Supplier Device Package: 200-FBGA (10x14.5) Grade: Automotive Write Cycle Time - Word, Page: 18ns Memory Interface: LVSTL Access Time: 3.5 ns Memory Organization: 128M x 32 Qualification: AEC-Q100 | товар відсутній | |||||||||
| NLQ43PFS-6NAT TR | Insignis Technology Corporation | Description: LPDDR4 4GB X32 3200MHZ CL22 10X1 Packaging: Tape & Reel (TR) Package / Case: 200-WFBGA Mounting Type: Surface Mount Memory Size: 4Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 105°C (TC) Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V Technology: SDRAM - Mobile LPDDR4 Clock Frequency: 1.6 GHz Memory Format: DRAM Supplier Device Package: 200-FBGA (10x14.5) Grade: Automotive Write Cycle Time - Word, Page: 18ns Memory Interface: LVSTL Access Time: 3.5 ns Memory Organization: 128M x 32 Qualification: AEC-Q100 | товар відсутній | |||||||||
| NLQ43PFS-6NET | Insignis Technology Corporation | Description: LPDDR4 4GB X32 3200MHZ CL22 10X1 Packaging: Tray Package / Case: 200-WFBGA Mounting Type: Surface Mount Memory Size: 4Gbit Memory Type: Volatile Operating Temperature: 0°C ~ 85°C (TC) Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V Technology: SDRAM - Mobile LPDDR4 Clock Frequency: 1.6 GHz Memory Format: DRAM Supplier Device Package: 200-FBGA (10x14.5) Write Cycle Time - Word, Page: 18ns Memory Interface: LVSTL Access Time: 3.5 ns Memory Organization: 128M x 32 | товар відсутній | |||||||||
| NLQ43PFS-6NET TR | Insignis Technology Corporation | Description: LPDDR4 4GB X32 3200MHZ CL22 10X1 Packaging: Cut Tape (CT) Package / Case: 200-WFBGA Mounting Type: Surface Mount Memory Size: 4Gbit Memory Type: Volatile Operating Temperature: 0°C ~ 85°C (TC) Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V Technology: SDRAM - Mobile LPDDR4 Clock Frequency: 1.6 GHz Memory Format: DRAM Supplier Device Package: 200-FBGA (10x14.5) Write Cycle Time - Word, Page: 18ns Memory Interface: LVSTL Access Time: 3.5 ns Memory Organization: 128M x 32 | товар відсутній | |||||||||
| NLQ43PFS-6NET TR | Insignis Technology Corporation | Description: LPDDR4 4GB X32 3200MHZ CL22 10X1 Packaging: Tape & Reel (TR) Package / Case: 200-WFBGA Mounting Type: Surface Mount Memory Size: 4Gbit Memory Type: Volatile Operating Temperature: 0°C ~ 85°C (TC) Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V Technology: SDRAM - Mobile LPDDR4 Clock Frequency: 1.6 GHz Memory Format: DRAM Supplier Device Package: 200-FBGA (10x14.5) Write Cycle Time - Word, Page: 18ns Memory Interface: LVSTL Access Time: 3.5 ns Memory Organization: 128M x 32 | товар відсутній | |||||||||
| NLQ43PFS-6NIT | Insignis Technology Corporation | Description: LPDDR4 4GB X32 3200MHZ CL22 10X1 Packaging: Tray Package / Case: 200-WFBGA Mounting Type: Surface Mount Memory Size: 4Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TC) Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V Technology: SDRAM - Mobile LPDDR4 Clock Frequency: 1.6 GHz Memory Format: DRAM Supplier Device Package: 200-FBGA (10x14.5) Write Cycle Time - Word, Page: 18ns Memory Interface: LVSTL Access Time: 3.5 ns Memory Organization: 128M x 32 | товар відсутній | |||||||||
| NLQ43PFS-6NIT TR | Insignis Technology Corporation | Description: LPDDR4 4GB X32 3200MHZ CL22 10X1 Packaging: Tape & Reel (TR) Package / Case: 200-WFBGA Mounting Type: Surface Mount Memory Size: 4Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TC) Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V Technology: SDRAM - Mobile LPDDR4 Clock Frequency: 1.6 GHz Memory Format: DRAM Supplier Device Package: 200-FBGA (10x14.5) Write Cycle Time - Word, Page: 18ns Memory Interface: LVSTL Access Time: 3.5 ns Memory Organization: 128M x 32 | товар відсутній | |||||||||
| NLQ43PFS-6NIT TR | Insignis Technology Corporation | Description: LPDDR4 4GB X32 3200MHZ CL22 10X1 Packaging: Cut Tape (CT) Package / Case: 200-WFBGA Mounting Type: Surface Mount Memory Size: 4Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TC) Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V Technology: SDRAM - Mobile LPDDR4 Clock Frequency: 1.6 GHz Memory Format: DRAM Supplier Device Package: 200-FBGA (10x14.5) Write Cycle Time - Word, Page: 18ns Memory Interface: LVSTL Access Time: 3.5 ns Memory Organization: 128M x 32 | товар відсутній | |||||||||
| NLQ43PFS-8NAT | Insignis Technology Corporation | Description: LPDDR4 4GB X32 2400MHZ CL16 10X1 Packaging: Tray Package / Case: 200-WFBGA Mounting Type: Surface Mount Memory Size: 4Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 105°C (TC) Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V Technology: SDRAM - Mobile LPDDR4 Clock Frequency: 1.2 GHz Memory Format: DRAM Supplier Device Package: 200-FBGA (10x14.5) Grade: Automotive Write Cycle Time - Word, Page: 18ns Memory Interface: LVSTL Access Time: 3.5 ns Memory Organization: 128M x 32 Qualification: AEC-Q100 | товар відсутній | |||||||||
| NLQ43PFS-8NAT TR | Insignis Technology Corporation | Description: LPDDR4 4GB X32 2400MHZ CL16 10X1 Packaging: Tape & Reel (TR) Package / Case: 200-WFBGA Mounting Type: Surface Mount Memory Size: 4Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 105°C (TC) Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V Technology: SDRAM - Mobile LPDDR4 Clock Frequency: 1.2 GHz Memory Format: DRAM Supplier Device Package: 200-FBGA (10x14.5) Grade: Automotive Write Cycle Time - Word, Page: 18ns Memory Interface: LVSTL Access Time: 3.5 ns Memory Organization: 128M x 32 Qualification: AEC-Q100 | товар відсутній | |||||||||
| NLQ43PFS-8NAT TR | Insignis Technology Corporation | Description: LPDDR4 4GB X32 2400MHZ CL16 10X1 Packaging: Cut Tape (CT) Package / Case: 200-WFBGA Mounting Type: Surface Mount Memory Size: 4Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 105°C (TC) Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V Technology: SDRAM - Mobile LPDDR4 Clock Frequency: 1.2 GHz Memory Format: DRAM Supplier Device Package: 200-FBGA (10x14.5) Grade: Automotive Write Cycle Time - Word, Page: 18ns Memory Interface: LVSTL Access Time: 3.5 ns Memory Organization: 128M x 32 Qualification: AEC-Q100 | товар відсутній | |||||||||
| NLQ43PFS-8NET | Insignis Technology Corporation | Description: LPDDR4 4GB X32 2400MHZ CL16 10X1 Packaging: Tray Package / Case: 200-WFBGA Mounting Type: Surface Mount Memory Size: 4Gbit Memory Type: Volatile Operating Temperature: 0°C ~ 85°C (TC) Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V Technology: SDRAM - Mobile LPDDR4 Clock Frequency: 1.2 GHz Memory Format: DRAM Supplier Device Package: 200-FBGA (10x14.5) Write Cycle Time - Word, Page: 18ns Memory Interface: LVSTL Access Time: 3.5 ns Memory Organization: 128M x 32 | товар відсутній | |||||||||
| NLQ43PFS-8NET TR | Insignis Technology Corporation | Description: LPDDR4 4GB X32 2400MHZ CL16 10X1 Packaging: Cut Tape (CT) Package / Case: 200-WFBGA Mounting Type: Surface Mount Memory Size: 4Gbit Memory Type: Volatile Operating Temperature: 0°C ~ 85°C (TC) Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V Technology: SDRAM - Mobile LPDDR4 Clock Frequency: 1.2 GHz Memory Format: DRAM Supplier Device Package: 200-FBGA (10x14.5) Write Cycle Time - Word, Page: 18ns Memory Interface: LVSTL Access Time: 3.5 ns Memory Organization: 128M x 32 | товар відсутній | |||||||||
| NLQ43PFS-8NET TR | Insignis Technology Corporation | Description: LPDDR4 4GB X32 2400MHZ CL16 10X1 Packaging: Tape & Reel (TR) Package / Case: 200-WFBGA Mounting Type: Surface Mount Memory Size: 4Gbit Memory Type: Volatile Operating Temperature: 0°C ~ 85°C (TC) Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V Technology: SDRAM - Mobile LPDDR4 Clock Frequency: 1.2 GHz Memory Format: DRAM Supplier Device Package: 200-FBGA (10x14.5) Write Cycle Time - Word, Page: 18ns Memory Interface: LVSTL Access Time: 3.5 ns Memory Organization: 128M x 32 | товар відсутній | |||||||||
| NLQ43PFS-8NIT | Insignis Technology Corporation | Description: LPDDR4 4GB X32 2400MHZ CL16 10X1 Packaging: Tray Package / Case: 200-WFBGA Mounting Type: Surface Mount Memory Size: 4Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TC) Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V Technology: SDRAM - Mobile LPDDR4 Clock Frequency: 1.2 GHz Memory Format: DRAM Supplier Device Package: 200-FBGA (10x14.5) Memory Interface: LVSTL Memory Organization: 128M x 32 | товар відсутній | |||||||||
| NLQ43PFS-8NIT TR | Insignis Technology Corporation | Description: LPDDR4 4GB X32 2400MHZ CL16 10X1 Packaging: Cut Tape (CT) Package / Case: 200-WFBGA Mounting Type: Surface Mount Memory Size: 4Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TC) Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V Technology: SDRAM - Mobile LPDDR4 Clock Frequency: 1.2 GHz Memory Format: DRAM Supplier Device Package: 200-FBGA (10x14.5) Write Cycle Time - Word, Page: 18ns Memory Interface: LVSTL Access Time: 3.5 ns Memory Organization: 128M x 32 | товар відсутній | |||||||||
| NLQ43PFS-8NIT TR | Insignis Technology Corporation | Description: LPDDR4 4GB X32 2400MHZ CL16 10X1 Packaging: Tape & Reel (TR) Package / Case: 200-WFBGA Mounting Type: Surface Mount Memory Size: 4Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TC) Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V Technology: SDRAM - Mobile LPDDR4 Clock Frequency: 1.2 GHz Memory Format: DRAM Supplier Device Package: 200-FBGA (10x14.5) Write Cycle Time - Word, Page: 18ns Memory Interface: LVSTL Access Time: 3.5 ns Memory Organization: 128M x 32 | товар відсутній | |||||||||
| NLQ45K101TRF | NIC Components | Inductor Power Chip Unshielded Wirewound 100uH 10% 1MHz 0.19A 2.2Ohm DCR 1812 T/R | на замовлення 250 шт: термін постачання 21-31 дні (днів) |
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| NLQ45K101TRF | NIC Components | Inductor Power Chip Unshielded Wirewound 100uH 10% 1MHz 0.19A 2.2Ohm DCR 1812 T/R | на замовлення 250 шт: термін постачання 21-31 дні (днів) | |||||||||
| NLQ45K101TRF | NIC Components | Inductor Power Chip Unshielded Wirewound 100uH 10% 1MHz 0.19A 2.2Ohm DCR 1812 T/R | на замовлення 3500 шт: термін постачання 21-31 дні (днів) |
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| NLQ45K101TRF | NIC Components | Inductor Power Chip Unshielded Wirewound 100uH 10% 1MHz 0.19A 2.2Ohm DCR 1812 T/R | на замовлення 250 шт: термін постачання 21-31 дні (днів) |
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| NLQ45K101TRF | NIC Components | Inductor Power Chip Unshielded Wirewound 100uH 10% 1MHz 0.19A 2.2Ohm DCR 1812 T/R | товар відсутній | |||||||||
| NLQ45K101TRF | NIC Components | Inductor Power Chip Unshielded Wirewound 100uH 10% 1MHz 0.19A 2.2Ohm DCR 1812 T/R | на замовлення 250 шт: термін постачання 21-31 дні (днів) |