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S4DTaiwan SemiconductorRectifiers 4A, 200V, Standard Recovery Rectifier
на замовлення 1698 шт:
термін постачання 21-30 дні (днів)
9+37.6 грн
11+ 28.49 грн
100+ 14.85 грн
500+ 13.78 грн
1000+ 9.39 грн
3000+ 8.26 грн
9000+ 7.39 грн
Мінімальне замовлення: 9
S4D M6GTaiwan Semiconductor CorporationDescription: DIODE GEN PURP 200V 4A DO214AB
товар відсутній
S4D R6Taiwan SemiconductorRectifiers 4A, 200V, GLASS PASSIVATED SMD RECTIFIER
товар відсутній
S4D R6GTaiwan SemiconductorRectifiers 4A, 200V, GLASS PASSIVATED SMD RECTIFIER
товар відсутній
S4D R7Taiwan SemiconductorRectifiers 4A 200V Standard Rec overy Rectifier
на замовлення 1056 шт:
термін постачання 21-30 дні (днів)
10+34.34 грн
11+ 29.18 грн
100+ 18.91 грн
500+ 14.92 грн
850+ 11.45 грн
1700+ 10.46 грн
4250+ 9.79 грн
Мінімальне замовлення: 10
S4D R7GTaiwan Semiconductor CorporationDescription: DIODE GEN PURP 200V 4A DO214AB
на замовлення 3343 шт:
термін постачання 21-31 дні (днів)
S4D R7GTaiwan Semiconductor CorporationDescription: DIODE GEN PURP 200V 4A DO214AB
на замовлення 2550 шт:
термін постачання 21-31 дні (днів)
S4D R7GTaiwan SemiconductorRectifiers 4A, 200V, Standard Recovery Rectifier
на замовлення 16 шт:
термін постачання 21-30 дні (днів)
10+32.55 грн
12+ 26.11 грн
100+ 13.72 грн
850+ 13.65 грн
1700+ 12.19 грн
9350+ 10.79 грн
24650+ 10.52 грн
Мінімальне замовлення: 10
S4D V6GTAIWAN SEMICONDUCTORCategory: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 4A; 1.5us; SMC; Ufmax: 1.15V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 4A
Reverse recovery time: 1.5µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 60pF
Case: SMC
Max. forward voltage: 1.15V
Max. forward impulse current: 100A
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 15 шт:
термін постачання 7-14 дні (днів)
7+40.34 грн
14+ 19.36 грн
25+ 15.73 грн
90+ 10.9 грн
247+ 10.32 грн
Мінімальне замовлення: 7
S4D V6GTAIWAN SEMICONDUCTORCategory: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 4A; 1.5us; SMC; Ufmax: 1.15V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 4A
Reverse recovery time: 1.5µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 60pF
Case: SMC
Max. forward voltage: 1.15V
Max. forward impulse current: 100A
Kind of package: reel; tape
на замовлення 15 шт:
термін постачання 21-30 дні (днів)
12+33.62 грн
15+ 22.89 грн
Мінімальне замовлення: 12
S4D V7GTaiwan Semiconductor CorporationDescription: DIODE GEN PURP 200V 4A DO214AB
на замовлення 830 шт:
термін постачання 21-31 дні (днів)
S4D015MAGLITECategory: Torches
Description: Torch: standard; Colour: black
Body material: aluminium
Body colour: black
Power supply: battery LR20 D 1,5V x4
Type of torch: standard
Light source features: luminous flux adjustment; self-cleaning switching contacts; spare bulb in rear cap; switch button in housing recess
на замовлення 3 шт:
термін постачання 21-30 дні (днів)
1+3777.05 грн
S4D015MAGLITECategory: Torches
Description: Torch: standard; Colour: black
Body material: aluminium
Body colour: black
Power supply: battery LR20 D 1,5V x4
Type of torch: standard
Light source features: luminous flux adjustment; self-cleaning switching contacts; spare bulb in rear cap; switch button in housing recess
кількість в упаковці: 1 шт
на замовлення 3 шт:
термін постачання 7-14 дні (днів)
1+4532.46 грн
5+ 4202.02 грн
S4D02120ASMC DIODE SOLUTIONSCategory: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; TO220AC; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 3V
Max. forward impulse current: 44A
Technology: SiC
Kind of package: tube
товар відсутній
S4D02120ASMC DIODE SOLUTIONSCategory: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; TO220AC; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 3V
Max. forward impulse current: 44A
Technology: SiC
Kind of package: tube
кількість в упаковці: 1 шт
товар відсутній
S4D02120ASMC Diode SolutionsDescription: DIODE SIL CARB 1.2KV 2A TO220AC
на замовлення 1999 шт:
термін постачання 21-31 дні (днів)
3+123.18 грн
10+ 106.34 грн
100+ 85.48 грн
500+ 65.9 грн
1000+ 54.84 грн
Мінімальне замовлення: 3
S4D02120ESMC Diode SolutionsDescription: DIODE SIL CARBIDE 1.2KV 2A DPAK
на замовлення 2231 шт:
термін постачання 21-31 дні (днів)
3+115.26 грн
10+ 99.68 грн
100+ 80.14 грн
500+ 61.8 грн
1000+ 51.42 грн
Мінімальне замовлення: 3
S4D02120ESMC Diode SolutionsDescription: DIODE SIL CARBIDE 1.2KV 2A DPAK
товар відсутній
S4D02120ETRSMC DIODE SOLUTIONSCategory: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 2A; DPAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Max. forward impulse current: 44A
Max. forward voltage: 3V
товар відсутній
S4D02120ETRSMC DIODE SOLUTIONSCategory: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 2A; DPAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Max. forward impulse current: 44A
Max. forward voltage: 3V
кількість в упаковці: 1 шт
товар відсутній
S4D04120ASMC DIODE SOLUTIONSCategory: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 4A; TO220AC; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 4A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 3V
Max. forward impulse current: 46A
Technology: SiC
Kind of package: tube
товар відсутній
S4D04120ASMC DIODE SOLUTIONSCategory: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 4A; TO220AC; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 4A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 3V
Max. forward impulse current: 46A
Technology: SiC
Kind of package: tube
кількість в упаковці: 1 шт
товар відсутній
S4D04120ETRSMC DIODE SOLUTIONSCategory: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 4A; DPAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 4A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Max. forward impulse current: 46A
Max. forward voltage: 3V
кількість в упаковці: 1 шт
товар відсутній
S4D04120ETRSMC DIODE SOLUTIONSCategory: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 4A; DPAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 4A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Max. forward impulse current: 46A
Max. forward voltage: 3V
товар відсутній
S4D05120ASMC Diode SolutionsDescription: DIODE SIL CARB 1.2KV 5A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 302pF @ 0V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-220AC (TO-220-2)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
на замовлення 855 шт:
термін постачання 21-31 дні (днів)
2+195.94 грн
50+ 151.71 грн
100+ 124.83 грн
500+ 99.12 грн
Мінімальне замовлення: 2
S4D05120ASMC DIODE SOLUTIONSCategory: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 46A
Max. forward voltage: 3V
товар відсутній
S4D05120ASMC DIODE SOLUTIONSCategory: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 46A
Max. forward voltage: 3V
кількість в упаковці: 1 шт
товар відсутній
S4D05120ESMC Diode SolutionsDescription: DIODE SIL CARBIDE 1.2KV 5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 302pF @ 0V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DPAK
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
на замовлення 2628 шт:
термін постачання 21-31 дні (днів)
2+187.29 грн
10+ 150.11 грн
100+ 119.51 грн
500+ 94.91 грн
1000+ 80.53 грн
Мінімальне замовлення: 2
S4D05120ESMC Diode SolutionsDescription: DIODE SIL CARBIDE 1.2KV 5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 302pF @ 0V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DPAK
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
товар відсутній
S4D05120E1SMC DIODE SOLUTIONSCategory: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 5A; DPAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Max. load current: 5A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Max. forward impulse current: 46A
Max. forward voltage: 3V
Leakage current: 0.2mA
товар відсутній
S4D05120E1SMC DIODE SOLUTIONSCategory: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 5A; DPAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Max. load current: 5A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Max. forward impulse current: 46A
Max. forward voltage: 3V
Leakage current: 0.2mA
кількість в упаковці: 2500 шт
товар відсутній
S4D05120E1SMC Diode SolutionsDescription: 1200V, 5A, DPAK, SIC SCHOTTKY DI
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 302pF @ 0V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DPAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 1.2 kV
товар відсутній
S4D05120E1SMC Diode SolutionsDescription: 1200V, 5A, DPAK, SIC SCHOTTKY DI
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 302pF @ 0V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DPAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 1.2 kV
товар відсутній
S4D05120ETRSMC DIODE SOLUTIONSCategory: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 5A; DPAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Max. forward impulse current: 46A
Max. forward voltage: 3V
товар відсутній
S4D05120ETRSMC DIODE SOLUTIONSCategory: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 5A; DPAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Max. forward impulse current: 46A
Max. forward voltage: 3V
кількість в упаковці: 1 шт
товар відсутній
S4D05120GSMC Diode SolutionsDescription: DIODE SIL CARBIDE 1.2KV 5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 302pF @ 0V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
товар відсутній
S4D05120GSMC Diode SolutionsDescription: DIODE SIL CARBIDE 1.2KV 5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 302pF @ 0V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
на замовлення 752 шт:
термін постачання 21-31 дні (днів)
2+177.93 грн
10+ 143.94 грн
100+ 116.45 грн
Мінімальне замовлення: 2
S4D05120GTRSMC DIODE SOLUTIONSCategory: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 5A; D2PAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Case: D2PAK
Kind of package: reel; tape
Max. forward impulse current: 46A
Max. forward voltage: 3V
товар відсутній
S4D05120GTRSMC DIODE SOLUTIONSCategory: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 5A; D2PAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Case: D2PAK
Kind of package: reel; tape
Max. forward impulse current: 46A
Max. forward voltage: 3V
кількість в упаковці: 1 шт
товар відсутній
S4D08120ASMC DIODE SOLUTIONSCategory: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8A; TO220AC; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 3V
Max. forward impulse current: 64A
Technology: SiC
Kind of package: tube
кількість в упаковці: 1 шт
товар відсутній
S4D08120ASMC Diode SolutionsDescription: DIODE SIL CARB 1.2KV 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 560pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC (TO-220-2)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 15 µA @ 1200 V
на замовлення 274 шт:
термін постачання 21-31 дні (днів)
2+263.65 грн
10+ 212.96 грн
100+ 172.29 грн
Мінімальне замовлення: 2
S4D08120ASMC DIODE SOLUTIONSCategory: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8A; TO220AC; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 3V
Max. forward impulse current: 64A
Technology: SiC
Kind of package: tube
товар відсутній
S4D08120ESMC Diode SolutionsDescription: DIODE SIL CARBIDE 1.2KV 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 560pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DPAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 15 µA @ 1200 V
на замовлення 1367 шт:
термін постачання 21-31 дні (днів)
2+256.45 грн
10+ 207.48 грн
100+ 167.82 грн
500+ 140 грн
1000+ 119.87 грн
Мінімальне замовлення: 2
S4D08120ESMC Diode SolutionsDescription: DIODE SIL CARBIDE 1.2KV 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 560pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DPAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 15 µA @ 1200 V
товар відсутній
S4D08120ETRSMC DIODE SOLUTIONSCategory: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 8A; DPAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Max. forward impulse current: 64A
Max. forward voltage: 3V
товар відсутній
S4D08120ETRSMC DIODE SOLUTIONSCategory: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 8A; DPAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Max. forward impulse current: 64A
Max. forward voltage: 3V
кількість в упаковці: 1 шт
товар відсутній
S4D10120ASMC Diode SolutionsDescription: DIODE SIL CARB 1.2KV 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 772pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC (TO-220-2)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 30 µA @ 1200 V
на замовлення 260 шт:
термін постачання 21-31 дні (днів)
1+403.4 грн
10+ 326.1 грн
100+ 263.81 грн
S4D10120ASMC DIODE SOLUTIONSCategory: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220AC; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 3V
Max. forward impulse current: 620A
Technology: SiC
Kind of package: tube
товар відсутній
S4D10120ASMC DIODE SOLUTIONSCategory: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220AC; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 3V
Max. forward impulse current: 620A
Technology: SiC
Kind of package: tube
кількість в упаковці: 1 шт
товар відсутній
S4D10120DSMC Diode SolutionsDescription: DIODE SCHOTTKY SILICON CARBIDE S
на замовлення 146 шт:
термін постачання 21-31 дні (днів)
1+304.71 грн
10+ 263.32 грн
100+ 215.78 грн
S4D10120DSMC DIODE SOLUTIONSCategory: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A x2
Max. load current: 10A
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 3V
Max. forward impulse current: 46A
Technology: SiC
Kind of package: tube
товар відсутній
S4D10120DSMC DIODE SOLUTIONSCategory: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A x2
Max. load current: 10A
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 3V
Max. forward impulse current: 46A
Technology: SiC
Kind of package: tube
кількість в упаковці: 1 шт
товар відсутній
S4D10120ESMC Diode SolutionsDescription: DIODE SIL CARBIDE 1.2KV 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 772pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DPAK
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 30 µA @ 1200 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+204.97 грн
Мінімальне замовлення: 1000
S4D10120ESMC Diode SolutionsDescription: DIODE SIL CARBIDE 1.2KV 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 772pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DPAK
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 30 µA @ 1200 V
на замовлення 1286 шт:
термін постачання 21-31 дні (днів)
1+396.2 грн
10+ 320.62 грн
100+ 259.33 грн
500+ 216.33 грн
S4D10120ETRSMC DIODE SOLUTIONSCategory: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 10A; DPAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Max. forward impulse current: 620A
Max. forward voltage: 3V
товар відсутній
S4D10120ETRSMC Diode SolutionsDescription: DIODE SCHOTTKY SILICON CARBIDE S
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
S4D10120ETRSMC DIODE SOLUTIONSCategory: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 10A; DPAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Max. forward impulse current: 620A
Max. forward voltage: 3V
кількість в упаковці: 1 шт
товар відсутній
S4D10120FSMC Diode SolutionsDescription: DIODE SIC 1.2KV 10A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 772pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
товар відсутній
S4D10120FSMC DIODE SOLUTIONSCategory: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; ITO220AC; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: ITO220AC
Max. forward voltage: 3V
Max. forward impulse current: 620A
Technology: SiC
Kind of package: tube
кількість в упаковці: 1 шт
товар відсутній
S4D10120FSMC DIODE SOLUTIONSCategory: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; ITO220AC; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: ITO220AC
Max. forward voltage: 3V
Max. forward impulse current: 620A
Technology: SiC
Kind of package: tube
товар відсутній
S4D10120HSMC DIODE SOLUTIONSCategory: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2,TO247AC
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO247-2; TO247AC
Max. forward voltage: 3V
Max. forward impulse current: 620A
Technology: SiC
Kind of package: tube
товар відсутній
S4D10120HSMC Diode SolutionsDescription: DIODE SIL CARB 1.2KV 10A TO247AC
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 772pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 30 µA @ 1200 V
на замовлення 532 шт:
термін постачання 21-31 дні (днів)
1+435.82 грн
25+ 332.44 грн
100+ 284.95 грн
500+ 237.7 грн
S4D10120HSMC DIODE SOLUTIONSCategory: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2,TO247AC
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO247-2; TO247AC
Max. forward voltage: 3V
Max. forward impulse current: 620A
Technology: SiC
Kind of package: tube
кількість в упаковці: 1 шт
товар відсутній
S4D10120L1SMC Diode SolutionsDescription: DIODE SIL CARBIDE 1.2KV 10A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 772pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: 5-DFN (8x8)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 30 µA @ 1200 V
товар відсутній
S4D10120L1SMC Diode SolutionsDescription: DIODE SIL CARBIDE 1.2KV 10A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 772pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: 5-DFN (8x8)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 30 µA @ 1200 V
товар відсутній
S4D10120L1TRSMC DIODE SOLUTIONSCategory: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 10A; DFN8x8; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 10A
Max. load current: 27A
Semiconductor structure: single diode
Case: DFN8x8
Max. forward voltage: 3V
Max. forward impulse current: 105A
Leakage current: 30µA
Power dissipation: 107.1W
Technology: SiC
Kind of package: reel; tape
товар відсутній
S4D10120L1TRSMC DIODE SOLUTIONSCategory: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 10A; DFN8x8; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 10A
Max. load current: 27A
Semiconductor structure: single diode
Case: DFN8x8
Max. forward voltage: 3V
Max. forward impulse current: 105A
Leakage current: 30µA
Power dissipation: 107.1W
Technology: SiC
Kind of package: reel; tape
кількість в упаковці: 3000 шт
товар відсутній
S4D15120ASMC Diode SolutionsDescription: DIODE SIL CARB 1.2KV 15A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1200pF @ 0V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220AC (TO-220-2)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Current - Reverse Leakage @ Vr: 35 µA @ 1200 V
на замовлення 278 шт:
термін постачання 21-31 дні (днів)
1+490.57 грн
10+ 426.68 грн
100+ 353.27 грн
S4D15120ASMC DIODE SOLUTIONSCategory: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO220AC; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 3V
Max. forward impulse current: 100A
Technology: SiC
Kind of package: tube
товар відсутній
S4D15120ASMC DIODE SOLUTIONSCategory: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO220AC; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 3V
Max. forward impulse current: 100A
Technology: SiC
Kind of package: tube
кількість в упаковці: 1 шт
товар відсутній
S4D15120DSMC DIODE SOLUTIONSCategory: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 7.5Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 7.5A x2
Max. load current: 15A
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 3V
Max. forward impulse current: 66A
Technology: SiC
Kind of package: tube
товар відсутній
S4D15120DSMC DIODE SOLUTIONSCategory: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 7.5Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 7.5A x2
Max. load current: 15A
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 3V
Max. forward impulse current: 66A
Technology: SiC
Kind of package: tube
кількість в упаковці: 1 шт
товар відсутній
S4D15120DSMC Diode SolutionsDescription: DIODE SCHOTTKY SILICON CARBIDE S
на замовлення 299 шт:
термін постачання 21-31 дні (днів)
1+555.4 грн
10+ 483.36 грн
100+ 400.15 грн
S4D15120GSMC DIODE SOLUTIONSCategory: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 15A; D2PAK; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 15A
Max. load current: 46A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 3V
Max. forward impulse current: 130A
Leakage current: 40µA
Power dissipation: 178.6W
Technology: SiC
Kind of package: reel; tape
товар відсутній
S4D15120GSMC DIODE SOLUTIONSCategory: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 15A; D2PAK; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 15A
Max. load current: 46A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 3V
Max. forward impulse current: 130A
Leakage current: 40µA
Power dissipation: 178.6W
Technology: SiC
Kind of package: reel; tape
кількість в упаковці: 800 шт
товар відсутній
S4D15120HSMC DIODE SOLUTIONSCategory: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO247-2,TO247AC
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A
Semiconductor structure: single diode
Case: TO247-2; TO247AC
Max. forward voltage: 3V
Max. forward impulse current: 100A
Technology: SiC
Kind of package: tube
товар відсутній
S4D15120HSMC DIODE SOLUTIONSCategory: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO247-2,TO247AC
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A
Semiconductor structure: single diode
Case: TO247-2; TO247AC
Max. forward voltage: 3V
Max. forward impulse current: 100A
Technology: SiC
Kind of package: tube
кількість в упаковці: 1 шт
товар відсутній
S4D20120ASMC DIODE SOLUTIONSCategory: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 162A
Max. forward voltage: 3V
товар відсутній
S4D20120ASMC DIODE SOLUTIONSCategory: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 162A
Max. forward voltage: 3V
кількість в упаковці: 1 шт
товар відсутній
S4D20120ASMC Diode SolutionsDescription: DIODE SIL CARB 1.2KV 20A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 721pF @ 0V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AC (TO-220-2)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
на замовлення 1044 шт:
термін постачання 21-31 дні (днів)
1+653.37 грн
50+ 502.32 грн
100+ 449.45 грн
500+ 372.17 грн
1000+ 334.96 грн
S4D20120DSMC Diode SolutionsDescription: DIODE ARR SIC 1200V 10A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 30 µA @ 1200 V
на замовлення 711 шт:
термін постачання 21-31 дні (днів)
1+729.01 грн
25+ 560.38 грн
100+ 501.39 грн
500+ 415.18 грн
S4D20120DSMC DIODE SOLUTIONSCategory: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Max. load current: 20A
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 105A
Max. forward voltage: 3V
товар відсутній
S4D20120DSMC DIODE SOLUTIONSCategory: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Max. load current: 20A
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 105A
Max. forward voltage: 3V
кількість в упаковці: 1 шт
товар відсутній
S4D20120GSMC Diode SolutionsDescription: DIODE SIL CARB 1.2KV 20A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 721pF @ 0V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
товар відсутній
S4D20120GSMC Diode SolutionsDescription: DIODE SIL CARB 1.2KV 20A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 721pF @ 0V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
товар відсутній
S4D20120GTRSMC DIODE SOLUTIONSCategory: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 20A; D2PAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: D2PAK
Kind of package: reel; tape
Max. forward impulse current: 162A
Max. forward voltage: 3V
товар відсутній
S4D20120GTRSMC DIODE SOLUTIONSCategory: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 20A; D2PAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: D2PAK
Kind of package: reel; tape
Max. forward impulse current: 162A
Max. forward voltage: 3V
кількість в упаковці: 1 шт
товар відсутній
S4D20120GTRSMC Diode SolutionsDescription: DIODE SCHOTTKY SILICON CARBIDE S
на замовлення 440 шт:
термін постачання 21-31 дні (днів)
1+512.9 грн
10+ 443.26 грн
100+ 363.16 грн
S4D20120HSMC Diode SolutionsDescription: DIODE SIL CARB 1.2KV 20A TO247AC
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 721pF @ 0V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
1+682.18 грн
10+ 563.27 грн
300+ 441.82 грн
S4D20120HSMC DIODE SOLUTIONSCategory: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2,TO247AC
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2; TO247AC
Kind of package: tube
Max. forward impulse current: 162A
Max. forward voltage: 3V
товар відсутній
S4D20120HSMC DIODE SOLUTIONSCategory: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2,TO247AC
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2; TO247AC
Kind of package: tube
Max. forward impulse current: 162A
Max. forward voltage: 3V
кількість в упаковці: 1 шт
товар відсутній
S4D26CSF372PJM
на замовлення 1958 шт:
термін постачання 14-28 дні (днів)
S4D26CSF49PJMTI
на замовлення 197 шт:
термін постачання 14-28 дні (днів)
S4D26SF129PJMR
на замовлення 400 шт:
термін постачання 14-28 дні (днів)
S4D26SF144PJM
на замовлення 259 шт:
термін постачання 14-28 дні (днів)
S4D26SF191PJM
на замовлення 90 шт:
термін постачання 14-28 дні (днів)
S4D26SF214PJM
на замовлення 319 шт:
термін постачання 14-28 дні (днів)
S4D26SF321PJM
на замовлення 169 шт:
термін постачання 14-28 дні (днів)
S4D26SF323PJM
на замовлення 158 шт:
термін постачання 14-28 дні (днів)
S4D26SF327PJM
на замовлення 205 шт:
термін постачання 14-28 дні (днів)
S4D26SF374PJM
на замовлення 63 шт:
термін постачання 14-28 дні (днів)
S4D27F56PJM
на замовлення 1430 шт:
термін постачання 14-28 дні (днів)
S4D27RF231PJMR
на замовлення 400 шт:
термін постачання 14-28 дні (днів)
S4D300-AR34-17ebm-papst Inc.Description: FAN AXIAL
товар відсутній
S4D30120DSMC DIODE SOLUTIONSCategory: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A x2
Max. load current: 30A
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 100A
Max. forward voltage: 3V
товар відсутній
S4D30120DSMC DIODE SOLUTIONSCategory: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A x2
Max. load current: 30A
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 100A
Max. forward voltage: 3V
кількість в упаковці: 1 шт
товар відсутній
S4D30120DSMC Diode SolutionsDescription: DIODE ARR SIC 1200V 15A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
1+636.08 грн
10+ 524.84 грн
300+ 411.68 грн
S4D30120FSMC Diode SolutionsDescription: 1200V, 30A, ITO-220AC, SIC SCHOT
Packaging: Tube
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
1+577.73 грн
10+ 476.42 грн
100+ 397.06 грн
S4D30120GSMC Diode SolutionsDescription: 1200V, 30A, D2PAK, SIC SCHOTTKY
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2581pF @ 1V, 1MHz
Current - Average Rectified (Io): 94A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 20 µA
на замовлення 96 шт:
термін постачання 21-31 дні (днів)
1+578.45 грн
10+ 477.53 грн
S4D30120GSMC Diode SolutionsDescription: 1200V, 30A, D2PAK, SIC SCHOTTKY
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2581pF @ 1V, 1MHz
Current - Average Rectified (Io): 94A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 20 µA
товар відсутній
S4D30120G0SMC DIODE SOLUTIONSCategory: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 30A; D2PAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 30A
Max. load current: 94A
Power dissipation: 441W
Semiconductor structure: single diode
Case: D2PAK
Kind of package: reel; tape
Max. forward impulse current: 300A
Max. forward voltage: 3V
Leakage current: 20µA
товар відсутній
S4D30120G0SMC DIODE SOLUTIONSCategory: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 30A; D2PAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 30A
Max. load current: 94A
Power dissipation: 441W
Semiconductor structure: single diode
Case: D2PAK
Kind of package: reel; tape
Max. forward impulse current: 300A
Max. forward voltage: 3V
Leakage current: 20µA
кількість в упаковці: 800 шт
товар відсутній
S4D30120GTRSMC DIODE SOLUTIONSCategory: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 30A; D2PAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 30A
Max. load current: 94A
Power dissipation: 441W
Semiconductor structure: single diode
Case: D2PAK
Kind of package: reel; tape
Max. forward impulse current: 300A
Max. forward voltage: 3V
Leakage current: 20µA
товар відсутній
S4D30120GTRSMC DIODE SOLUTIONSCategory: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 30A; D2PAK; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 30A
Max. load current: 94A
Power dissipation: 441W
Semiconductor structure: single diode
Case: D2PAK
Kind of package: reel; tape
Max. forward impulse current: 300A
Max. forward voltage: 3V
Leakage current: 20µA
кількість в упаковці: 800 шт
товар відсутній
S4D30120HSMC Diode SolutionsDescription: DIODE SIL CARB 1.2KV 94A TO247AC
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2581pF @ 0V, 1MHz
Current - Average Rectified (Io): 94A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
на замовлення 916 шт:
термін постачання 21-31 дні (днів)
1+674.98 грн
10+ 557.51 грн
300+ 437.29 грн
600+ 384.73 грн
S4D30120HSMC DIODE SOLUTIONSCategory: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; TO247-2,TO247AC
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Case: TO247-2; TO247AC
Kind of package: tube
Max. forward impulse current: 246A
Max. forward voltage: 3V
товар відсутній
S4D30120HSMC DIODE SOLUTIONSCategory: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; TO247-2,TO247AC
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Case: TO247-2; TO247AC
Kind of package: tube
Max. forward impulse current: 246A
Max. forward voltage: 3V
кількість в упаковці: 1 шт
товар відсутній
S4D30120H2SMC DIODE SOLUTIONSCategory: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; 441W; TO247AC
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Max. load current: 88A
Power dissipation: 441W
Semiconductor structure: single diode
Case: TO247AC
Kind of package: tube
Max. forward impulse current: 233A
Max. forward voltage: 3V
Leakage current: 25µA
кількість в упаковці: 1 шт
на замовлення 25 шт:
термін постачання 7-14 дні (днів)
1+677.72 грн
3+ 458.15 грн
6+ 417.04 грн
300+ 407.05 грн
S4D30120H2SMC Diode SolutionsDescription: 1200V, 30A, TO-247AC, SIC SCHOTT
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2581pF @ 0V, 1MHz
Current - Average Rectified (Io): 94A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 1.2 kV
на замовлення 222 шт:
термін постачання 21-31 дні (днів)
1+533.79 грн
10+ 441.11 грн
S4D30120H2SMC DIODE SOLUTIONSCategory: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; 441W; TO247AC
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Max. load current: 88A
Power dissipation: 441W
Semiconductor structure: single diode
Case: TO247AC
Kind of package: tube
Max. forward impulse current: 233A
Max. forward voltage: 3V
Leakage current: 25µA
на замовлення 25 шт:
термін постачання 21-30 дні (днів)
1+564.76 грн
3+ 367.65 грн
6+ 347.54 грн
S4D350-AN22-67ebm-papstAC Fans AC Axial Fan, 350mm, 400VAC
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+42947.62 грн
10+ 39055.58 грн
25+ 33442.61 грн
50+ 33186.89 грн
100+ 32726.07 грн
250+ 32725.4 грн
1000+ 32724.74 грн
S4D350-BA06-08ebm-papst Inc.Description: FAN AXIAL
Power (Watts): 190W
Features: Dual Voltage
Packaging: Bulk
Voltage - Rated: 230/400VAC
Size / Dimension: Round - 422mm Dia
Bearing Type: Ball
RPM: 1620 RPM
Air Flow: 1186.8 CFM (33.23m³/min)
Width: 167.0mm
Operating Temperature: -13 ~ 122°F (-25 ~ 50°C)
Termination: 7 Wire Leads with Splice Terminals
Approval Agency: CCC
Ingress Protection: IP44
Fan Type: Tubeaxial, 3 Phase
Static Pressure: 0.602 in H2O (150.0 Pa)
Part Status: Active
на замовлення 16 шт:
термін постачання 21-31 дні (днів)
1+29966.38 грн
10+ 26621.05 грн
S4D350-BA06-08ebm-papstAC Fans AC Axial Fan, 3-Phase, 230/400VAC
товар відсутній
S4D37RF187PJM
на замовлення 143 шт:
термін постачання 14-28 дні (днів)
S4D400-AP12-77ebm-papstAC Fans AC Axial Fan
товар відсутній
S4D40120DSMC DIODE SOLUTIONSCategory: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A x2
Max. load current: 40A
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 162A
Max. forward voltage: 3V
кількість в упаковці: 1 шт
товар відсутній
S4D40120DSMC DIODE SOLUTIONSCategory: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A x2
Max. load current: 40A
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 162A
Max. forward voltage: 3V
товар відсутній
S4D40120DSMC Diode SolutionsDescription: DIODE SCHOTTKY SILICON CARBIDE S
на замовлення 290 шт:
термін постачання 21-31 дні (днів)
1+1332.67 грн
10+ 1179.54 грн
100+ 996.18 грн
S4D40120HSMC Diode SolutionsDescription: DIODE SIC 1.2KV 128A TO247AC
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 3.227nF @ 0V, 1MHz
Current - Average Rectified (Io): 128A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 40 A
Current - Reverse Leakage @ Vr: 30 µA @ 1200 V
на замовлення 551 шт:
термін постачання 21-31 дні (днів)
1+1084.15 грн
10+ 959.78 грн
100+ 810.58 грн
500+ 679.64 грн
S4D40120HSMC DIODE SOLUTIONSCategory: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 41A; TO247-2,TO247AC
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 41A
Semiconductor structure: single diode
Case: TO247-2; TO247AC
Kind of package: tube
Max. forward impulse current: 245A
Max. forward voltage: 3V
кількість в упаковці: 1 шт
товар відсутній
S4D40120HSMC DIODE SOLUTIONSCategory: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 41A; TO247-2,TO247AC
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 41A
Semiconductor structure: single diode
Case: TO247-2; TO247AC
Kind of package: tube
Max. forward impulse current: 245A
Max. forward voltage: 3V
товар відсутній
S4D41M
на замовлення 10200 шт:
термін постачання 14-28 дні (днів)
S4D450-AO14-01EBM-PAPSTCategory: AC 400V Fans
Description: Fan: AC; axial; 400VAC; ball bearing; 1360rpm; IP54; Kind: 3-phase
Type of fan: AC
Kind of fan: axial
Supply voltage: 400V AC
Power consumption: 480W
Current rating: 0.98A
Kind of Bearing: ball bearing
Rotational rate/speed: 1360rpm
Frequency: 50Hz
Impeller material: plastic
Enclosure material: steel
Insulation class: F
IP rating: IP54
Leads: connectors 2,8x0,5mm
Operating temperature: -40...65°C
Fan motor: M4D094-HA
Kind of motor: 3-phase
Protection class: I
кількість в упаковці: 1 шт
товар відсутній
S4D450-AO14-01EBM-PAPSTCategory: AC 400V Fans
Description: Fan: AC; axial; 400VAC; ball bearing; 1360rpm; IP54; Kind: 3-phase
Type of fan: AC
Kind of fan: axial
Supply voltage: 400V AC
Power consumption: 480W
Current rating: 0.98A
Kind of Bearing: ball bearing
Rotational rate/speed: 1360rpm
Frequency: 50Hz
Impeller material: plastic
Enclosure material: steel
Insulation class: F
IP rating: IP54
Leads: connectors 2,8x0,5mm
Operating temperature: -40...65°C
Fan motor: M4D094-HA
Kind of motor: 3-phase
Protection class: I
товар відсутній
S4D450-AP03-10ebm-papstAC Fans AC Axial Fan, 450mm Round, 3240CFM
товар відсутній
S4D450-AP03-10ebm-papst Inc.Description: FAN AXIAL
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
S4D450-AP03-10EBM-PAPSTDescription: EBM-PAPST - S4D450-AP03-10 - AXIAL FAN, 450MM, 460VAC, 3266.6CFM
tariffCode: 84145925
Stromanschluss: Terminals
rohsCompliant: Y-EX
hazardous: false
rohsPhthalatesCompliant: YES
Art des Lagers: Ball Bearing
Nennleistung: 380W
IP-Schutzart: IP44
usEccn: EAR99
Luftstrom - m3/min: 92.5m³/min
Nennstrom: 600mA
AC-Nennspannung: 460V
Außentiefe: 174.5mm
Geräuschentwicklung: -
euEccn: NLR
Luftstrom - CFM: 3266.6cu.ft/min
Lüfterrahmen: Circular
Produktpalette: S4D450 Series
productTraceability: No
Rahmengröße: 450mm
Nenndrehzahl: 1460rpm
directShipCharge: 25
SVHC: Lead
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+50508.32 грн
S4D450-AU01-01ebm-papstAC Fans AC Axial Fan
товар відсутній
S4D450-HA14-01ebm-papstAC Fans Axial, 450mm, 400V, 585/660W, 1.1/1.16A, 1330/1540RPM, w/Guard for Full Nozzle
товар відсутній
S4D47F311PJM
на замовлення 4469 шт:
термін постачання 14-28 дні (днів)
S4D80120S2SMC DIODE SOLUTIONSCategory: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 41Ax2; SOT227B; screw
Case: SOT227B
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Technology: SiC
Features of semiconductor devices: Schottky
Max. off-state voltage: 1.2kV
Max. load current: 82A
Load current: 41A x2
Semiconductor structure: double independent
Max. forward impulse current: 245A
на замовлення 12 шт:
термін постачання 21-30 дні (днів)
1+2079.02 грн
2+ 1825.08 грн
S4D80120S2SMC DIODE SOLUTIONSCategory: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 41Ax2; SOT227B; screw
Case: SOT227B
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Technology: SiC
Features of semiconductor devices: Schottky
Max. off-state voltage: 1.2kV
Max. load current: 82A
Load current: 41A x2
Semiconductor structure: double independent
Max. forward impulse current: 245A
кількість в упаковці: 1 шт
на замовлення 12 шт:
термін постачання 7-14 дні (днів)
1+2494.82 грн
2+ 2274.33 грн
120+ 2124.33 грн
S4D80120S2SMC Diode SolutionsDescription: 1200V, 80A, SOT-227, SIC SCHOTTK
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 128A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 40 A
Current - Reverse Leakage @ Vr: 30 µA @ 1200 V
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термін постачання 21-31 дні (днів)
1+2339.74 грн
10+ 2002.25 грн
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