Результат пошуку "566480" : 15
Вид перегляду :
Мінімальне замовлення: 5000
Мінімальне замовлення: 67
Мінімальне замовлення: 2
Мінімальне замовлення: 7
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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SP001566480 | Infineon |
на замовлення 1750 шт: термін постачання 14-28 дні (днів) |
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ERA6AEB332V | PANASONIC |
Description: PANASONIC - ERA6AEB332V - Chipwiderstand, Oberflächenmontage, 3.3 kohm, ± 0.1%, 125 mW, 0805 [Metrisch 2012] tariffCode: 85332100 rohsCompliant: Y-EX Bauform/Gehäuse des Widerstands: 0805 [Metrisch 2012] Widerstandstechnologie: Metallfolie (Dünnschicht) hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q200 Nennleistung: 125mW Widerstandstyp: Hohe Zuverlässigkeit Widerstand: 3.3kohm usEccn: EAR99 Betriebstemperatur, min.: -55°C Widerstandstoleranz: 0 Temperaturkoeffizient: 0 Produktlänge: 2.01mm euEccn: NLR Produktpalette: ERA A Series productTraceability: Yes-Date/Lot Code Nennspannung: 100V Betriebstemperatur, max.: 155°C Produktbreite: 1.25mm SVHC: No SVHC (23-Jan-2024) |
на замовлення 35000 шт: термін постачання 21-31 дні (днів) |
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ERA6AEB332V | PANASONIC |
Description: PANASONIC - ERA6AEB332V - Chipwiderstand, Oberflächenmontage, 3.3 kohm, ± 0.1%, 125 mW, 0805 [Metrisch 2012] tariffCode: 85332100 rohsCompliant: Y-EX Bauform/Gehäuse des Widerstands: 0 Widerstandstechnologie: Metallfolie (Dünnschicht) hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q200 Nennleistung: 125mW Widerstandstyp: Hohe Zuverlässigkeit Widerstand: 3.3kohm usEccn: EAR99 Betriebstemperatur, min.: -55°C Widerstandstoleranz: 0 Temperaturkoeffizient: 0 Produktlänge: 2.01mm euEccn: NLR Produktpalette: ERA A Series productTraceability: Yes-Date/Lot Code Nennspannung: 100V Betriebstemperatur, max.: 155°C Produktbreite: 1.25mm SVHC: No SVHC (23-Jan-2024) |
на замовлення 40583 шт: термін постачання 21-31 дні (днів) |
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IRFB3206PBF | Infineon Technologies |
Description: MOSFET N-CH 60V 120A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 75A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 150µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6540 pF @ 50 V |
на замовлення 25707 шт: термін постачання 21-31 дні (днів) |
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IRFB3206PBF | Infineon Technologies | Trans MOSFET N-CH Si 60V 210A 3-Pin(3+Tab) TO-220AB Tube |
на замовлення 4312 шт: термін постачання 21-31 дні (днів) |
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S29PL064J60BFI070 | Infineon Technologies |
Description: IC FLASH 64MBIT PARALLEL 48VFBGA Packaging: Tray Package / Case: 48-VFBGA Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 48-VFBGA (8.15x6.15) Part Status: Active Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 60 ns Memory Organization: 4M x 16 DigiKey Programmable: Not Verified |
на замовлення 3380 шт: термін постачання 21-31 дні (днів) |
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3758/20-275 | 3M Electronic Solutions Division | Flat Cables 20C .050" STANDARD 26 AWG STRANDED |
товар відсутній |
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S29PL064J60BFA073 | Infineon Technologies |
Description: IC FLASH 64MBIT CFI 48FBGA Packaging: Tape & Reel (TR) Package / Case: 48-VFBGA Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Memory Format: FLASH Supplier Device Package: 48-FBGA (8.15x6.15) Part Status: Active Write Cycle Time - Word, Page: 60ns Memory Interface: CFI Access Time: 60 ns Memory Organization: 4M x 16 DigiKey Programmable: Not Verified |
товар відсутній |
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S29PL064J60BFA073 | Infineon Technologies | 64M bit 3V CMOS Flash Memory |
товар відсутній |
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S29PL064J60BFI070 | Infineon Technologies | 64M bit 3V CMOS Flash Memory |
товар відсутній |
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S29PL064J60BFW073 | Infineon Technologies |
Description: IC FLASH 64MBIT PARALLEL 56FBGA Packaging: Tape & Reel (TR) Package / Case: 56-VFBGA Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -25°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 56-FBGA (9x7) Part Status: Active Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 60 ns Memory Organization: 4M x 16 DigiKey Programmable: Not Verified |
товар відсутній |
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S29PL064J60BFW073 | Infineon Technologies | 64M bit 3V CMOS Flash Memory |
товар відсутній |
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S29PL064J70BFI070 | Infineon Technologies | S29PL064J70BFI070 |
товар відсутній |
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S29PL064J70BFI070 | Infineon Technologies | NOR Flash Parallel 3V/3.3V 64M-bit 4M x 16 70ns 48-Pin FBGA |
товар відсутній |
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S29PL064J70BFI070 | Infineon Technologies |
Description: IC FLASH 64MBIT PARALLEL 48VFBGA Packaging: Tray Package / Case: 48-VFBGA Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 48-VFBGA (8.15x6.15) Part Status: Active Write Cycle Time - Word, Page: 70ns Memory Interface: Parallel Access Time: 70 ns Memory Organization: 4M x 16 DigiKey Programmable: Not Verified |
товар відсутній |
ERA6AEB332V |
Виробник: PANASONIC
Description: PANASONIC - ERA6AEB332V - Chipwiderstand, Oberflächenmontage, 3.3 kohm, ± 0.1%, 125 mW, 0805 [Metrisch 2012]
tariffCode: 85332100
rohsCompliant: Y-EX
Bauform/Gehäuse des Widerstands: 0805 [Metrisch 2012]
Widerstandstechnologie: Metallfolie (Dünnschicht)
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q200
Nennleistung: 125mW
Widerstandstyp: Hohe Zuverlässigkeit
Widerstand: 3.3kohm
usEccn: EAR99
Betriebstemperatur, min.: -55°C
Widerstandstoleranz: 0
Temperaturkoeffizient: 0
Produktlänge: 2.01mm
euEccn: NLR
Produktpalette: ERA A Series
productTraceability: Yes-Date/Lot Code
Nennspannung: 100V
Betriebstemperatur, max.: 155°C
Produktbreite: 1.25mm
SVHC: No SVHC (23-Jan-2024)
Description: PANASONIC - ERA6AEB332V - Chipwiderstand, Oberflächenmontage, 3.3 kohm, ± 0.1%, 125 mW, 0805 [Metrisch 2012]
tariffCode: 85332100
rohsCompliant: Y-EX
Bauform/Gehäuse des Widerstands: 0805 [Metrisch 2012]
Widerstandstechnologie: Metallfolie (Dünnschicht)
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q200
Nennleistung: 125mW
Widerstandstyp: Hohe Zuverlässigkeit
Widerstand: 3.3kohm
usEccn: EAR99
Betriebstemperatur, min.: -55°C
Widerstandstoleranz: 0
Temperaturkoeffizient: 0
Produktlänge: 2.01mm
euEccn: NLR
Produktpalette: ERA A Series
productTraceability: Yes-Date/Lot Code
Nennspannung: 100V
Betriebstemperatur, max.: 155°C
Produktbreite: 1.25mm
SVHC: No SVHC (23-Jan-2024)
на замовлення 35000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5000+ | 2.47 грн |
25000+ | 2.42 грн |
ERA6AEB332V |
Виробник: PANASONIC
Description: PANASONIC - ERA6AEB332V - Chipwiderstand, Oberflächenmontage, 3.3 kohm, ± 0.1%, 125 mW, 0805 [Metrisch 2012]
tariffCode: 85332100
rohsCompliant: Y-EX
Bauform/Gehäuse des Widerstands: 0
Widerstandstechnologie: Metallfolie (Dünnschicht)
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q200
Nennleistung: 125mW
Widerstandstyp: Hohe Zuverlässigkeit
Widerstand: 3.3kohm
usEccn: EAR99
Betriebstemperatur, min.: -55°C
Widerstandstoleranz: 0
Temperaturkoeffizient: 0
Produktlänge: 2.01mm
euEccn: NLR
Produktpalette: ERA A Series
productTraceability: Yes-Date/Lot Code
Nennspannung: 100V
Betriebstemperatur, max.: 155°C
Produktbreite: 1.25mm
SVHC: No SVHC (23-Jan-2024)
Description: PANASONIC - ERA6AEB332V - Chipwiderstand, Oberflächenmontage, 3.3 kohm, ± 0.1%, 125 mW, 0805 [Metrisch 2012]
tariffCode: 85332100
rohsCompliant: Y-EX
Bauform/Gehäuse des Widerstands: 0
Widerstandstechnologie: Metallfolie (Dünnschicht)
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q200
Nennleistung: 125mW
Widerstandstyp: Hohe Zuverlässigkeit
Widerstand: 3.3kohm
usEccn: EAR99
Betriebstemperatur, min.: -55°C
Widerstandstoleranz: 0
Temperaturkoeffizient: 0
Produktlänge: 2.01mm
euEccn: NLR
Produktpalette: ERA A Series
productTraceability: Yes-Date/Lot Code
Nennspannung: 100V
Betriebstemperatur, max.: 155°C
Produktbreite: 1.25mm
SVHC: No SVHC (23-Jan-2024)
на замовлення 40583 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
67+ | 11.31 грн |
152+ | 4.94 грн |
500+ | 4.04 грн |
1000+ | 2.92 грн |
2500+ | 2.63 грн |
IRFB3206PBF |
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6540 pF @ 50 V
Description: MOSFET N-CH 60V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6540 pF @ 50 V
на замовлення 25707 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 151.66 грн |
50+ | 117.11 грн |
100+ | 96.36 грн |
500+ | 76.52 грн |
1000+ | 64.92 грн |
2000+ | 61.68 грн |
5000+ | 58.39 грн |
10000+ | 56.45 грн |
IRFB3206PBF |
Виробник: Infineon Technologies
Trans MOSFET N-CH Si 60V 210A 3-Pin(3+Tab) TO-220AB Tube
Trans MOSFET N-CH Si 60V 210A 3-Pin(3+Tab) TO-220AB Tube
на замовлення 4312 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 49.61 грн |
S29PL064J60BFI070 |
Виробник: Infineon Technologies
Description: IC FLASH 64MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-VFBGA (8.15x6.15)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 60 ns
Memory Organization: 4M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 64MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-VFBGA (8.15x6.15)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 60 ns
Memory Organization: 4M x 16
DigiKey Programmable: Not Verified
на замовлення 3380 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 545.24 грн |
10+ | 482.7 грн |
25+ | 472.64 грн |
40+ | 442.05 грн |
80+ | 396.63 грн |
338+ | 384.65 грн |
676+ | 359.77 грн |
1014+ | 347.23 грн |
3758/20-275 |
Виробник: 3M Electronic Solutions Division
Flat Cables 20C .050" STANDARD 26 AWG STRANDED
Flat Cables 20C .050" STANDARD 26 AWG STRANDED
товар відсутній
S29PL064J60BFA073 |
Виробник: Infineon Technologies
Description: IC FLASH 64MBIT CFI 48FBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Memory Format: FLASH
Supplier Device Package: 48-FBGA (8.15x6.15)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: CFI
Access Time: 60 ns
Memory Organization: 4M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 64MBIT CFI 48FBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Memory Format: FLASH
Supplier Device Package: 48-FBGA (8.15x6.15)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: CFI
Access Time: 60 ns
Memory Organization: 4M x 16
DigiKey Programmable: Not Verified
товар відсутній
S29PL064J60BFW073 |
Виробник: Infineon Technologies
Description: IC FLASH 64MBIT PARALLEL 56FBGA
Packaging: Tape & Reel (TR)
Package / Case: 56-VFBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -25°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-FBGA (9x7)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 60 ns
Memory Organization: 4M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 64MBIT PARALLEL 56FBGA
Packaging: Tape & Reel (TR)
Package / Case: 56-VFBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -25°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-FBGA (9x7)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 60 ns
Memory Organization: 4M x 16
DigiKey Programmable: Not Verified
товар відсутній
S29PL064J70BFI070 |
Виробник: Infineon Technologies
NOR Flash Parallel 3V/3.3V 64M-bit 4M x 16 70ns 48-Pin FBGA
NOR Flash Parallel 3V/3.3V 64M-bit 4M x 16 70ns 48-Pin FBGA
товар відсутній
S29PL064J70BFI070 |
Виробник: Infineon Technologies
Description: IC FLASH 64MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-VFBGA (8.15x6.15)
Part Status: Active
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 4M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 64MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-VFBGA (8.15x6.15)
Part Status: Active
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 4M x 16
DigiKey Programmable: Not Verified
товар відсутній