AS3D020120C ANBON SEMICONDUCTOR (INT'L) LIMITED
Виробник: ANBON SEMICONDUCTOR (INT'L) LIMITEDDescription: 1200V,20A SILICON CARBIDE SCHOTT
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1280pF @ 0V, 1MHz
Current - Average Rectified (Io): 51A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 431.09 грн |
| 10+ | 356.01 грн |
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Технічний опис AS3D020120C ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: 1200V,20A SILICON CARBIDE SCHOTT, Packaging: Tube, Package / Case: TO-247-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 1280pF @ 0V, 1MHz, Current - Average Rectified (Io): 51A, Supplier Device Package: TO-247-2, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A, Current - Reverse Leakage @ Vr: 20 µA @ 1200 V.