BAP1321LX,315 NXP USA Inc.
Виробник: NXP USA Inc.Description: RF DIODE PIN 60V 130MW 2DFN
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Diode Type: PIN - Single
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Vr, F: 0.28pF @ 20V, 1MHz
Resistance @ If, F: 1.3Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 60V
Supplier Device Package: DFN1006D-2
Current - Max: 100 mA
Power Dissipation (Max): 130 mW
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Технічний опис BAP1321LX,315 NXP USA Inc.
Description: RF DIODE PIN 60V 130MW 2DFN, Packaging: Tape & Reel (TR), Package / Case: 2-XDFN, Diode Type: PIN - Single, Operating Temperature: -65°C ~ 150°C (TJ), Capacitance @ Vr, F: 0.28pF @ 20V, 1MHz, Resistance @ If, F: 1.3Ohm @ 100mA, 100MHz, Voltage - Peak Reverse (Max): 60V, Supplier Device Package: DFN1006D-2, Current - Max: 100 mA, Power Dissipation (Max): 130 mW.