BAV103-IR08

BAV103-IR08 Vishay General Semiconductor - Diodes Division


Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 200V 250MA SOD80
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-80 MiniMELF
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
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Технічний опис BAV103-IR08 Vishay General Semiconductor - Diodes Division

Description: DIODE GP 200V 250MA SOD80, Packaging: Tape & Reel (TR), Package / Case: DO-213AC, MINI-MELF, SOD-80, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 50 ns, Technology: Standard, Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz, Current - Average Rectified (Io): 250mA, Supplier Device Package: SOD-80 MiniMELF, Operating Temperature - Junction: 175°C (Max), Part Status: Obsolete, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA, Current - Reverse Leakage @ Vr: 100 nA @ 200 V, Grade: Automotive, Qualification: AEC-Q101.