BS108/01,126 NXP USA Inc.

Description: MOSFET N-CH 200V 300MA TO92-3, Packaging: Tape & Box (TB), Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 300mA (Ta), Rds On (Max) @ Id, Vgs: 5Ohm @ 100mA, 2.8V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 1.8V @ 1mA, Supplier Device Package: TO-92-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 2.8V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 25 V.