BSB280N15NZ3G Infineon Technologies

Description: BSB280N15 - 12V-300V N-CHANNEL P, Packaging: Bulk, Package / Case: DirectFET™ Isometric MX, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 30A (Tc), Rds On (Max) @ Id, Vgs: 28mOhm @ 30A, 10V, Power Dissipation (Max): 2.8W (Ta), 57W (Tc), Vgs(th) (Max) @ Id: 4V @ 60µA, Supplier Device Package: MG-WDSON-2-5, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 75 V.