BSF050N03LQ3G Infineon Technologies

Description: N-CHANNEL POWER MOSFET, Packaging: Bulk, Package / Case: DirectFET™ Isometric MX, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 60A (Tc), Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V, Power Dissipation (Max): 2.2W (Ta), 28W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: MG-WDSON-2, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 15 V.