BSL214NL6327HTSA1

BSL214NL6327HTSA1 Infineon Technologies


BSL214N_Rev2.1.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a30431add1d95011afc5baa4504c2 Виробник: Infineon Technologies
Description: MOSFET 2N-CH 20V 1.5A TSOP6-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V
Rds On (Max) @ Id, Vgs: 140mOhm @ 1.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 3.7µA
Supplier Device Package: PG-TSOP6-6
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Технічний опис BSL214NL6327HTSA1 Infineon Technologies

Description: MOSFET 2N-CH 20V 1.5A TSOP6-6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 500mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 1.5A, Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V, Rds On (Max) @ Id, Vgs: 140mOhm @ 1.5A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.2V @ 3.7µA, Supplier Device Package: PG-TSOP6-6.