BY25Q16ESSIG(T) BYTe Semiconductor
Виробник: BYTe SemiconductorDescription: 16 MBIT, 3.0V (2.7V TO 3.6V), -4
Packaging: Tube
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 50µs, 2.4ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 7 ns
Memory Organization: 2M x 8
на замовлення 19000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 36.83 грн |
| 10+ | 30.74 грн |
| 95+ | 22.93 грн |
| 285+ | 19.98 грн |
| 570+ | 16.9 грн |
| 1045+ | 13.06 грн |
| 2565+ | 11.71 грн |
| 5035+ | 10.96 грн |
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Технічний опис BY25Q16ESSIG(T) BYTe Semiconductor
Description: 16 MBIT, 3.0V (2.7V TO 3.6V), -4, Packaging: Tube, Package / Case: 8-SOIC (0.209", 5.30mm Width), Mounting Type: Surface Mount, Memory Size: 16Mbit, Memory Type: Non-Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 2.7V ~ 3.6V, Technology: FLASH - NOR (SLC), Clock Frequency: 108 MHz, Memory Format: FLASH, Supplier Device Package: 8-SOP, Write Cycle Time - Word, Page: 50µs, 2.4ms, Memory Interface: SPI - Quad I/O, QPI, Access Time: 7 ns, Memory Organization: 2M x 8.