BY550-1000G EIC SEMICONDUCTOR INC.
Виробник: EIC SEMICONDUCTOR INC.Description: DIODE GEN PURP 1KV 5A DO201AD
Packaging: Bag
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 20 µA @ 1000 V
на замовлення 5050 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 65.72 грн |
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Технічний опис BY550-1000G EIC SEMICONDUCTOR INC.
Description: DIODE GEN PURP 1KV 5A DO201AD, Packaging: Bag, Package / Case: DO-201AD, Axial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Capacitance @ Vr, F: 50pF @ 4V, 1MHz, Current - Average Rectified (Io): 5A, Supplier Device Package: DO-201AD, Operating Temperature - Junction: -65°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A, Current - Reverse Leakage @ Vr: 20 µA @ 1000 V.