BYV10X-600P127 NXP USA Inc.
Виробник: NXP USA Inc.Description: DIODE GEN PURP 600V 10A TO220F
Packaging: Bulk
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220F
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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Технічний опис BYV10X-600P127 NXP USA Inc.
Description: DIODE GEN PURP 600V 10A TO220F, Packaging: Bulk, Package / Case: TO-220-2 Full Pack, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 50 ns, Technology: Standard, Current - Average Rectified (Io): 10A, Supplier Device Package: TO-220F, Operating Temperature - Junction: 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 2 V @ 10 A, Current - Reverse Leakage @ Vr: 10 µA @ 600 V.