CLS03(TE16L,PSD,Q) Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and StorageDescription: DIODE SCHOTTKY 60V 10A L-FLAT
Packaging: Bulk
Package / Case: L-FLAT™
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 345pF @ 10V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: L-FLAT™ (4x5.5)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
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Технічний опис CLS03(TE16L,PSD,Q) Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 60V 10A L-FLAT, Packaging: Bulk, Package / Case: L-FLAT™, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 345pF @ 10V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: L-FLAT™ (4x5.5), Operating Temperature - Junction: -40°C ~ 125°C, Part Status: Obsolete, Voltage - DC Reverse (Vr) (Max): 60 V, Voltage - Forward (Vf) (Max) @ If: 580 mV @ 10 A, Current - Reverse Leakage @ Vr: 1 mA @ 60 V.