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CP147-MJ11016-CT Central Semiconductor Corp

CP147-MJ11016_Feb4%2C2016.pdf Виробник: Central Semiconductor Corp
Description: TRANS NPN DARL 120V 30A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 300mA, 30A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 20A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: Die
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 200 W
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Технічний опис CP147-MJ11016-CT Central Semiconductor Corp

Description: TRANS NPN DARL 120V 30A DIE, Packaging: Tape & Reel (TR), Package / Case: Die, Mounting Type: Surface Mount, Transistor Type: NPN - Darlington, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 4V @ 300mA, 30A, Current - Collector Cutoff (Max): 1mA, DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 20A, 5V, Frequency - Transition: 4MHz, Supplier Device Package: Die, Part Status: Obsolete, Current - Collector (Ic) (Max): 30 A, Voltage - Collector Emitter Breakdown (Max): 120 V, Power - Max: 200 W.