CPD65-BAV45-WN Central Semiconductor Corp
Виробник: Central Semiconductor CorpDescription: DIODE GEN PURP 20V 50MA DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 600 ns
Technology: Standard
Capacitance @ Vr, F: 1.3pF @ 0V, 1MHz
Current - Average Rectified (Io): 50mA
Supplier Device Package: Die
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 10 pA @ 20 V
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Технічний опис CPD65-BAV45-WN Central Semiconductor Corp
Description: DIODE GEN PURP 20V 50MA DIE, Packaging: Bulk, Package / Case: Die, Mounting Type: Surface Mount, Speed: Small Signal =< 200mA (Io), Any Speed, Reverse Recovery Time (trr): 600 ns, Technology: Standard, Capacitance @ Vr, F: 1.3pF @ 0V, 1MHz, Current - Average Rectified (Io): 50mA, Supplier Device Package: Die, Operating Temperature - Junction: -65°C ~ 125°C, Voltage - DC Reverse (Vr) (Max): 20 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA, Current - Reverse Leakage @ Vr: 10 pA @ 20 V.