CPD93V-1N3600-CT Central Semiconductor Corp
Виробник: Central Semiconductor CorpDescription: DIODE GEN PURP 50V 200MA DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: Die
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
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Технічний опис CPD93V-1N3600-CT Central Semiconductor Corp
Description: DIODE GEN PURP 50V 200MA DIE, Packaging: Bulk, Package / Case: Die, Mounting Type: Surface Mount, Speed: Small Signal =< 200mA (Io), Any Speed, Reverse Recovery Time (trr): 6 ns, Technology: Standard, Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz, Current - Average Rectified (Io): 200mA, Supplier Device Package: Die, Operating Temperature - Junction: -65°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 50 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA, Current - Reverse Leakage @ Vr: 100 nA @ 50 V.