DD435N34KHPSA1

DD435N34KHPSA1 Infineon Technologies


Infineon-DD435N-DS-v03_00-EN.pdf?fileId=db3a304412b407950112b4301f7e4f16 Виробник: Infineon Technologies
Description: DIODE MODULE GP 3400V 573A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 573A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 3400 V
Voltage - Forward (Vf) (Max) @ If: 1.71 V @ 1200 A
Current - Reverse Leakage @ Vr: 50 mA @ 3400 V
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Технічний опис DD435N34KHPSA1 Infineon Technologies

Description: DIODE MODULE GP 3400V 573A, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Diode Configuration: 1 Pair Series Connection, Current - Average Rectified (Io) (per Diode): 573A, Supplier Device Package: Module, Operating Temperature - Junction: -40°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 3400 V, Voltage - Forward (Vf) (Max) @ If: 1.71 V @ 1200 A, Current - Reverse Leakage @ Vr: 50 mA @ 3400 V.