FDU8778

FDU8778 Fairchild Semiconductor


FAIR-S-A0002365596-1.pdf?t.download=true&u=5oefqw Виробник: Fairchild Semiconductor
Description: MOSFET N-CH 25V 35A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 35A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: I-PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 845 pF @ 13 V
на замовлення 17805 шт:

термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
634+31.18 грн
Мінімальне замовлення: 634
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Технічний опис FDU8778 Fairchild Semiconductor

Description: MOSFET N-CH 25V 35A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Rds On (Max) @ Id, Vgs: 14mOhm @ 35A, 10V, Power Dissipation (Max): 39W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: I-PAK, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 845 pF @ 13 V.