FF100R12YT3B60BOMA1 Infineon Technologies


Виробник: Infineon Technologies
Description: FF100R12YT3B60BO- IGBT MOD 1.2kV
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 100A
NTC Thermistor: Yes
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1650 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
на замовлення 32 шт:

термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
6+3709.51 грн
Мінімальне замовлення: 6
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Технічний опис FF100R12YT3B60BOMA1 Infineon Technologies

Description: FF100R12YT3B60BO- IGBT MOD 1.2kV, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: -40°C ~ 125°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 100A, NTC Thermistor: Yes, IGBT Type: Trench, Part Status: Active, Current - Collector (Ic) (Max): 140 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 1650 W, Current - Collector Cutoff (Max): 3 mA, Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V.