FF150R12KE3B8BDLA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: AG-62MM
Part Status: Active
Current - Collector (Ic) (Max): 225 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
на замовлення 37 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 5897.97 грн |
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Технічний опис FF150R12KE3B8BDLA1 Infineon Technologies
Description: IGBT MODULE, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: -40°C ~ 125°C (TJ), Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 150A, NTC Thermistor: No, Supplier Device Package: AG-62MM, Part Status: Active, Current - Collector (Ic) (Max): 225 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 1250 W, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 11 nF @ 25 V.