FGB40N6S2T Fairchild Semiconductor
Виробник: Fairchild SemiconductorDescription: N-CHANNEL IGBT
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 20A
Supplier Device Package: D2PAK (TO-263)
Td (on/off) @ 25°C: 8ns/35ns
Switching Energy: 115µJ (on), 195µJ (off)
Test Condition: 390V, 20A, 3Ohm, 15V
Gate Charge: 35 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 290 W
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термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 81+ | 269.37 грн |
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Технічний опис FGB40N6S2T Fairchild Semiconductor
Description: N-CHANNEL IGBT, Packaging: Bulk, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 20A, Supplier Device Package: D2PAK (TO-263), Td (on/off) @ 25°C: 8ns/35ns, Switching Energy: 115µJ (on), 195µJ (off), Test Condition: 390V, 20A, 3Ohm, 15V, Gate Charge: 35 nC, Current - Collector (Ic) (Max): 75 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 180 A, Power - Max: 290 W.