FP75R07N2E4BOSA1

FP75R07N2E4BOSA1 Infineon Technologies


Infineon-FP75R07N2E4-DS-v03_00-EN.pdf?fileId=db3a3043315daf440131612c3f1341df Виробник: Infineon Technologies
Description: IGBT MODULE 650V 95A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.6 nF @ 25 V
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Технічний опис FP75R07N2E4BOSA1 Infineon Technologies

Description: IGBT MODULE 650V 95A, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Phase Inverter, Operating Temperature: -40°C ~ 150°C, Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 75A, NTC Thermistor: Yes, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 95 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 4.6 nF @ 25 V.