G3S06006J Global Power Technology Co. Ltd
Виробник: Global Power Technology Co. Ltd
Description: DIODE SIC 600V 21.5A TO220ISO
Packaging: Bulk
Package / Case: TO-220-2 Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 424pF @ 0V, 1MHz
Current - Average Rectified (Io): 21.5A
Supplier Device Package: TO-220ISO
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Description: DIODE SIC 600V 21.5A TO220ISO
Packaging: Bulk
Package / Case: TO-220-2 Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 424pF @ 0V, 1MHz
Current - Average Rectified (Io): 21.5A
Supplier Device Package: TO-220ISO
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
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Технічний опис G3S06006J Global Power Technology Co. Ltd
Description: DIODE SIC 600V 21.5A TO220ISO, Packaging: Bulk, Package / Case: TO-220-2 Isolated Tab, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 424pF @ 0V, 1MHz, Current - Average Rectified (Io): 21.5A, Supplier Device Package: TO-220ISO, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A, Current - Reverse Leakage @ Vr: 50 µA @ 600 V.