Продукція > GANPOWER > GPI65008DF68

GPI65008DF68 GaNPower

GPI65008DF68_V1.2.pdf Виробник: GaNPower
Description: GaNFET N-CH 650V 8A DFN6x8
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A
Vgs(th) (Max) @ Id: 1.7V @ 3.5mA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7.5V, -12V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 63 pF @ 400 V
на замовлення 990 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+288.15 грн
Відгуки про товар
Написати відгук

Технічний опис GPI65008DF68 GaNPower

Description: GaNFET N-CH 650V 8A DFN6x8, Packaging: Tape & Reel (TR), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A, Vgs(th) (Max) @ Id: 1.7V @ 3.5mA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, Vgs (Max): +7.5V, -12V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 6 V, Input Capacitance (Ciss) (Max) @ Vds: 63 pF @ 400 V.