GPI65060DFN GaNPower
Виробник: GaNPowerDescription: GANFET N-CH 650V 60A DFN8X8
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A
Vgs(th) (Max) @ Id: 1.2V @ 3.5mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7.5V, -12V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 400 V
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Технічний опис GPI65060DFN GaNPower
Description: GANFET N-CH 650V 60A DFN8X8, Packaging: Tape & Reel (TR), Package / Case: Die, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A, Vgs(th) (Max) @ Id: 1.2V @ 3.5mA, Supplier Device Package: Die, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, Vgs (Max): +7.5V, -12V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 6 V, Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 400 V.