GPI6TIC15DFV GaNPower
Виробник: GaNPowerDescription: Power IC based on Power GaN HEMT
Packaging: Tube
Package / Case: 8-WDFN Exposed Pad
Configuration: N-Channel
Technology: GaNFET (Gallium Nitride)
Supplier Device Package: 8-DFN (8x8)
Part Status: Active
Voltage - Rated: 900 V
Voltage - Test: 6.5 V
Current - Test: 2.5 A
Mounting Type: Surface Mount
Rds On (Max) @ Id, Vgs: 105mOhm @ 2.5A, 0V
Drain to Source Voltage (Vdss): 900 V
на замовлення 226 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 674.26 грн |
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Технічний опис GPI6TIC15DFV GaNPower
Description: Power IC based on Power GaN HEMT, Packaging: Tube, Package / Case: 8-WDFN Exposed Pad, Configuration: N-Channel, Technology: GaNFET (Gallium Nitride), Supplier Device Package: 8-DFN (8x8), Part Status: Active, Voltage - Rated: 900 V, Voltage - Test: 6.5 V, Current - Test: 2.5 A, Mounting Type: Surface Mount, Rds On (Max) @ Id, Vgs: 105mOhm @ 2.5A, 0V, Drain to Source Voltage (Vdss): 900 V.