GPIRGIC15DFV GaNPower
Виробник: GaNPowerDescription: Power IC based on Power GaN HEMT
Packaging: Bag
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 2.5A, 0V
Supplier Device Package: 8-DFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 8V
Drain to Source Voltage (Vdss): 900 V
на замовлення 424 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 674.26 грн |
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Технічний опис GPIRGIC15DFV GaNPower
Description: Power IC based on Power GaN HEMT, Packaging: Bag, Package / Case: 8-WDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc), Rds On (Max) @ Id, Vgs: 105mOhm @ 2.5A, 0V, Supplier Device Package: 8-DFN (8x8), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, 8V, Drain to Source Voltage (Vdss): 900 V.