GT090N06S Goford Semiconductor

Виробник: Goford Semiconductor
Description: N60V,14A,RD<8M@10V,VTH1.0V~2.4V,
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 8A, 10V
Power Dissipation (Max): 3.1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1378 pF @ 30 V