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GWM100-01X1-SLSAM IXYS


GWM100-01X1.pdf Виробник: IXYS
Description: MOSFET 6N-CH 100V 90A ISOPLUS
Packaging: Tube
Package / Case: 17-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 90A
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 80A, 10V
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: ISOPLUS-DIL™
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Технічний опис GWM100-01X1-SLSAM IXYS

Description: MOSFET 6N-CH 100V 90A ISOPLUS, Packaging: Tube, Package / Case: 17-SMD, Flat Leads, Mounting Type: Surface Mount, Configuration: 6 N-Channel (3-Phase Bridge), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 90A, Rds On (Max) @ Id, Vgs: 8.5mOhm @ 80A, 10V, Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V, Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: ISOPLUS-DIL™.