MB85R256GPF-G-BNDE1 Kaga FEI America, Inc.
Виробник: Kaga FEI America, Inc.
Description: IC FRAM 256KBIT PARALLEL
Packaging: Tray
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Memory Format: FRAM
Part Status: Obsolete
Write Cycle Time - Word, Page: 150ns
Memory Interface: Parallel
Access Time: 150 ns
Memory Organization: 32K x 8
Description: IC FRAM 256KBIT PARALLEL
Packaging: Tray
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Memory Format: FRAM
Part Status: Obsolete
Write Cycle Time - Word, Page: 150ns
Memory Interface: Parallel
Access Time: 150 ns
Memory Organization: 32K x 8
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Технічний опис MB85R256GPF-G-BNDE1 Kaga FEI America, Inc.
Description: IC FRAM 256KBIT PARALLEL, Packaging: Tray, Memory Size: 256Kbit, Memory Type: Non-Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 2.7V ~ 3.6V, Technology: FRAM (Ferroelectric RAM), Memory Format: FRAM, Part Status: Obsolete, Write Cycle Time - Word, Page: 150ns, Memory Interface: Parallel, Access Time: 150 ns, Memory Organization: 32K x 8.