NC1M120C12HTNG NextGen Components
Виробник: NextGen ComponentsDescription: SiC MOSFET N 1200V 12mohm 214A
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 214A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 100A, 20V
Power Dissipation (Max): 938W (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 40mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Input Capacitance (Ciss) (Max) @ Vds: 8330 pF @ 1000 V
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 100+ | 5708.9 грн |
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Технічний опис NC1M120C12HTNG NextGen Components
Description: SiC MOSFET N 1200V 12mohm 214A, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 214A (Tc), Rds On (Max) @ Id, Vgs: 20mOhm @ 100A, 20V, Power Dissipation (Max): 938W (Ta), Vgs(th) (Max) @ Id: 3.5V @ 40mA, Supplier Device Package: TO-247-4L, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +20V, -5V, Drain to Source Voltage (Vdss): 1200 V, Input Capacitance (Ciss) (Max) @ Vds: 8330 pF @ 1000 V.