NE3516S02-A CEL
Виробник: CEL
Description: RF MOSFET GAAS HJ-FET 2V S02
Packaging: Bulk
Package / Case: 4-SMD, Flat Leads
Current Rating (Amps): 60mA
Frequency: 12GHz
Configuration: N-Channel
Power - Output: 165mW
Gain: 14dB
Technology: GaAs HJ-FET
Noise Figure: 0.35dB
Supplier Device Package: S02
Voltage - Rated: 4 V
Voltage - Test: 2 V
Current - Test: 10 mA
Description: RF MOSFET GAAS HJ-FET 2V S02
Packaging: Bulk
Package / Case: 4-SMD, Flat Leads
Current Rating (Amps): 60mA
Frequency: 12GHz
Configuration: N-Channel
Power - Output: 165mW
Gain: 14dB
Technology: GaAs HJ-FET
Noise Figure: 0.35dB
Supplier Device Package: S02
Voltage - Rated: 4 V
Voltage - Test: 2 V
Current - Test: 10 mA
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Технічний опис NE3516S02-A CEL
Description: RF MOSFET GAAS HJ-FET 2V S02, Packaging: Bulk, Package / Case: 4-SMD, Flat Leads, Current Rating (Amps): 60mA, Frequency: 12GHz, Configuration: N-Channel, Power - Output: 165mW, Gain: 14dB, Technology: GaAs HJ-FET, Noise Figure: 0.35dB, Supplier Device Package: S02, Voltage - Rated: 4 V, Voltage - Test: 2 V, Current - Test: 10 mA.