NX3008NBKT115 NXP USA Inc.
Виробник: NXP USA Inc.Description: SMALL SIGNAL FET
Packaging: Bulk
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 350mA, 4.5V
Power Dissipation (Max): 250mW (Ta), 770mW (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SC-75
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.68 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V
на замовлення 217719 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9616+ | 2.02 грн |
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Технічний опис NX3008NBKT115 NXP USA Inc.
Description: SMALL SIGNAL FET, Packaging: Bulk, Package / Case: SC-75, SOT-416, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 350mA (Ta), Rds On (Max) @ Id, Vgs: 1.4Ohm @ 350mA, 4.5V, Power Dissipation (Max): 250mW (Ta), 770mW (Tc), Vgs(th) (Max) @ Id: 1.1V @ 250µA, Supplier Device Package: SC-75, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 0.68 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V.