P1H06300D8 PN Junction Semiconductor
Виробник: PN Junction SemiconductorDescription: GANFET N-CH 650V 10A DFN 8X8
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A
Power Dissipation (Max): 55.5W
Supplier Device Package: DFN8*8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 650 V
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Технічний опис P1H06300D8 PN Junction Semiconductor
Description: GANFET N-CH 650V 10A DFN 8X8, Packaging: Tape & Reel (TR), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A, Power Dissipation (Max): 55.5W, Supplier Device Package: DFN8*8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, Vgs (Max): +10V, -20V, Drain to Source Voltage (Vdss): 650 V.