P3M12080G7 PN Junction Semiconductor

Description: SICFET N-CH 1200V 32A TO-263-7, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 32A, Rds On (Max) @ Id, Vgs: 96mOhm @ 20A, 15V, Power Dissipation (Max): 136W, Vgs(th) (Max) @ Id: 2.2V @ 30mA (Typ), Supplier Device Package: D2PAK-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +19V, -8V, Drain to Source Voltage (Vdss): 1200 V.