PAA12400BM3

PAA12400BM3 PN Junction Semiconductor


PAA12400BM3.pdf Виробник: PN Junction Semiconductor
Description: 1200V HALF-BRIDGE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 350A
Input Capacitance (Ciss) (Max) @ Vds: 29.5pF @ 1000V
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 300A, 20V
Vgs(th) (Max) @ Id: 5V @ 100mA
Supplier Device Package: Module
Part Status: Active
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Технічний опис PAA12400BM3 PN Junction Semiconductor

Description: 1200V HALF-BRIDGE, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 350A, Input Capacitance (Ciss) (Max) @ Vds: 29.5pF @ 1000V, Rds On (Max) @ Id, Vgs: 7.3mOhm @ 300A, 20V, Vgs(th) (Max) @ Id: 5V @ 100mA, Supplier Device Package: Module, Part Status: Active.