PH1225AL,115 NXP USA Inc.
Виробник: NXP USA Inc.Description: MOSFET N-CH 25V 100A LFPAK56
Packaging: Bulk
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56; Power-SO8
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6380 pF @ 12 V
на замовлення 24733 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1268+ | 15.76 грн |
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Технічний опис PH1225AL,115 NXP USA Inc.
Description: MOSFET N-CH 25V 100A LFPAK56, Packaging: Bulk, Package / Case: SOT-1023, 4-LFPAK, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 1.2mOhm @ 15A, 10V, Vgs(th) (Max) @ Id: 2.15V @ 1mA, Supplier Device Package: LFPAK56; Power-SO8, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6380 pF @ 12 V.