PMN27UP,115-NXP NXP USA Inc.
Виробник: NXP USA Inc.Description: MOSFET P-CH 20V 5.7A 6TSOP
Packaging: Bulk
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 2.4A, 4.5V
Power Dissipation (Max): 540mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 10 V
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Технічний опис PMN27UP,115-NXP NXP USA Inc.
Description: MOSFET P-CH 20V 5.7A 6TSOP, Packaging: Bulk, Package / Case: SC-74, SOT-457, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), Rds On (Max) @ Id, Vgs: 32mOhm @ 2.4A, 4.5V, Power Dissipation (Max): 540mW (Ta), 6.25W (Tc), Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: 6-TSOP, Part Status: Active, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 10 V.