PTAB182002TCV2R250XTMA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: IC RF FET LDMOS 190W H-49248H-4
Packaging: Tape & Reel (TR)
Package / Case: H-49248H-4
Current Rating (Amps): 10µA
Mounting Type: Surface Mount
Frequency: 1.805GHz ~ 1.88GHz
Power - Output: 29W
Gain: 14.8dB
Technology: LDMOS
Supplier Device Package: H-49248H-4
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 520 mA
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Технічний опис PTAB182002TCV2R250XTMA1 Infineon Technologies
Description: IC RF FET LDMOS 190W H-49248H-4, Packaging: Tape & Reel (TR), Package / Case: H-49248H-4, Current Rating (Amps): 10µA, Mounting Type: Surface Mount, Frequency: 1.805GHz ~ 1.88GHz, Power - Output: 29W, Gain: 14.8dB, Technology: LDMOS, Supplier Device Package: H-49248H-4, Part Status: Obsolete, Voltage - Rated: 65 V, Voltage - Test: 28 V, Current - Test: 520 mA.