RMD1N25ES9 Rectron USA
Виробник: Rectron USA
Description: MOSFET N-CHANNEL 25V 1.1A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 500mA, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-363-6L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 25 V
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 10 V
Description: MOSFET N-CHANNEL 25V 1.1A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 500mA, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-363-6L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 25 V
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 10 V
товар відсутній
Відгуки про товар
Написати відгук
Технічний опис RMD1N25ES9 Rectron USA
Description: MOSFET N-CHANNEL 25V 1.1A SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), Rds On (Max) @ Id, Vgs: 600mOhm @ 500mA, 4.5V, Power Dissipation (Max): 800mW (Ta), Vgs(th) (Max) @ Id: 1.1V @ 250µA, Supplier Device Package: SOT-363-6L, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 25 V, Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 10 V.