SGB06N60ATMA1

SGB06N60ATMA1 Infineon Technologies


SGB06N60.pdf Виробник: Infineon Technologies
Description: IGBT 600V 12A 68W TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 6A
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Td (on/off) @ 25°C: 25ns/220ns
Switching Energy: 215µJ
Test Condition: 400V, 6A, 50Ohm, 15V
Gate Charge: 32 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 68 W
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Технічний опис SGB06N60ATMA1 Infineon Technologies

Description: IGBT 600V 12A 68W TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 6A, Supplier Device Package: PG-TO263-3-2, IGBT Type: NPT, Td (on/off) @ 25°C: 25ns/220ns, Switching Energy: 215µJ, Test Condition: 400V, 6A, 50Ohm, 15V, Gate Charge: 32 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 12 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 24 A, Power - Max: 68 W.