SIGC61T60NCX7SA1 Infineon Technologies
Виробник: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 75A
Supplier Device Package: Die
IGBT Type: NPT
Td (on/off) @ 25°C: 65ns/170ns
Test Condition: 300V, 75A, 3Ohm, 15V
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 225 A
Description: IGBT 3 CHIP 600V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 75A
Supplier Device Package: Die
IGBT Type: NPT
Td (on/off) @ 25°C: 65ns/170ns
Test Condition: 300V, 75A, 3Ohm, 15V
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 225 A
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Технічний опис SIGC61T60NCX7SA1 Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER, Packaging: Bulk, Package / Case: Die, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 75A, Supplier Device Package: Die, IGBT Type: NPT, Td (on/off) @ 25°C: 65ns/170ns, Test Condition: 300V, 75A, 3Ohm, 15V, Current - Collector (Ic) (Max): 75 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 225 A.