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SVC236-TB-E-ON onsemi

en6800-d.pdf Виробник: onsemi
Description: DIFFUSED JUNCTION TYPE SILICON V
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: 1 Pair Common Cathode
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 16.84pF @ 6.5V, 1MHz
Q @ Vr, F: 70 @ 3V, 100MHz
Capacitance Ratio Condition: C1/C6.5
Supplier Device Package: SC-59-3/CP3
Voltage - Peak Reverse (Max): 16 V
Capacitance Ratio: 5
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Технічний опис SVC236-TB-E-ON onsemi

Description: DIFFUSED JUNCTION TYPE SILICON V, Packaging: Bulk, Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Diode Type: 1 Pair Common Cathode, Operating Temperature: 125°C (TJ), Capacitance @ Vr, F: 16.84pF @ 6.5V, 1MHz, Q @ Vr, F: 70 @ 3V, 100MHz, Capacitance Ratio Condition: C1/C6.5, Supplier Device Package: SC-59-3/CP3, Voltage - Peak Reverse (Max): 16 V, Capacitance Ratio: 5.