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HUFA75639S3ST-F085A HUFA75639S3ST-F085A Fairchild Semiconductor FAIRS31838-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 100V 56A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 56A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
на замовлення 497 шт:
термін постачання 21-31 дні (днів)
270+74.68 грн
Мінімальне замовлення: 270
HUFA76407DK8T-F085 HUFA76407DK8T-F085 onsemi huf76407dk_f085-d.pdf Description: MOSFET 2N-CH 60V 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 60V
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
3+112.81 грн
10+ 90.57 грн
100+ 72.09 грн
500+ 57.25 грн
1000+ 48.57 грн
Мінімальне замовлення: 3
HUFA76407DK8T-F085 HUFA76407DK8T-F085 onsemi / Fairchild HUF76407DK_F085_D-2314593.pdf MOSFET 60V Dual N-Channel LogicLevel PwrMOSFET
на замовлення 2500 шт:
термін постачання 147-156 дні (днів)
3+120.89 грн
10+ 98.54 грн
100+ 68.42 грн
250+ 63.04 грн
500+ 57.59 грн
1000+ 49.29 грн
2500+ 46.83 грн
Мінімальне замовлення: 3
HUFA76645S3ST-F085 HUFA76645S3ST-F085 onsemi / Fairchild HUF76645S_F085_D-2314284.pdf MOSFET 100V 75A 0.015ohm N-CH
на замовлення 8 шт:
термін постачання 21-30 дні (днів)
2+264.26 грн
10+ 218.47 грн
25+ 180.01 грн
100+ 154.11 грн
250+ 145.47 грн
500+ 136.84 грн
800+ 116.91 грн
Мінімальне замовлення: 2
ISL9V3040D3ST-F085C ISL9V3040D3ST-F085C onsemi ISL9V3040_F085C_D-2314506.pdf IGBT Transistors IGBT, N-Channel Ignition, DPAK, 17A, 1.58V, 300mJ EcoSPARK I IGBT, N-Channel Ignition, DPAK, 17A, 1.58V, 300mJ EcoSPARK? I
на замовлення 4647 шт:
термін постачання 21-30 дні (днів)
3+128.64 грн
10+ 106.18 грн
100+ 73.73 грн
250+ 70.41 грн
500+ 61.31 грн
1000+ 52.54 грн
2500+ 49.89 грн
Мінімальне замовлення: 3
ISL9V3040D3ST-F085C ISL9V3040D3ST-F085C onsemi isl9v3040-f085c-d.pdf Description: ECOSPARK1 IGN-IGBT TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Reverse Recovery Time (trr): 7 µs
Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 6A
Supplier Device Package: TO-252 (DPAK)
Td (on/off) @ 25°C: -/4µs
Test Condition: 300V, 1000Ohm, 5V
Gate Charge: 17 nC
Part Status: Active
Current - Collector (Ic) (Max): 21 A
Voltage - Collector Emitter Breakdown (Max): 430 V
Power - Max: 150 W
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+54.36 грн
Мінімальне замовлення: 2500
ISL9V3040D3ST-F085C ISL9V3040D3ST-F085C onsemi isl9v3040-f085c-d.pdf Description: ECOSPARK1 IGN-IGBT TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Reverse Recovery Time (trr): 7 µs
Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 6A
Supplier Device Package: TO-252 (DPAK)
Td (on/off) @ 25°C: -/4µs
Test Condition: 300V, 1000Ohm, 5V
Gate Charge: 17 nC
Part Status: Active
Current - Collector (Ic) (Max): 21 A
Voltage - Collector Emitter Breakdown (Max): 430 V
Power - Max: 150 W
на замовлення 6454 шт:
термін постачання 21-31 дні (днів)
3+120.72 грн
10+ 96.39 грн
100+ 76.75 грн
500+ 60.94 грн
1000+ 51.71 грн
Мінімальне замовлення: 3
ISL9V3040S3ST-F085C ISL9V3040S3ST-F085C onsemi ISL9V3040_F085C_D-2314506.pdf IGBT Transistors ECOSPARK1 IGN-IGBT
на замовлення 3104 шт:
термін постачання 21-30 дні (днів)
2+199.94 грн
10+ 158.13 грн
100+ 112.92 грн
500+ 109.6 грн
800+ 81.7 грн
2400+ 77.05 грн
4800+ 73.07 грн
Мінімальне замовлення: 2
ISL9V5045S3ST-F085 ISL9V5045S3ST-F085 onsemi isl9v5045s-f085-d.pdf Description: IGBT 480V 51A 300W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 10A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: -/10.8µs
Test Condition: 300V, 1kOhm, 5V
Gate Charge: 32 nC
Part Status: Active
Current - Collector (Ic) (Max): 51 A
Voltage - Collector Emitter Breakdown (Max): 480 V
Power - Max: 300 W
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
800+192.27 грн
1600+ 158.54 грн
Мінімальне замовлення: 800
ISL9V5045S3ST-F085 ISL9V5045S3ST-F085 onsemi / Fairchild ISL9V5045S_F085_D-2314597.pdf IGBT Transistors 500mJ, 450V EcoSPARK N-Chan Ignition IGBT
на замовлення 6254 шт:
термін постачання 21-30 дні (днів)
1+340.99 грн
10+ 282.64 грн
100+ 198.61 грн
800+ 150.79 грн
ISL9V5045S3ST-F085 ISL9V5045S3ST-F085 onsemi isl9v5045s-f085-d.pdf Description: IGBT 480V 51A 300W D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 10A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: -/10.8µs
Test Condition: 300V, 1kOhm, 5V
Gate Charge: 32 nC
Part Status: Active
Current - Collector (Ic) (Max): 51 A
Voltage - Collector Emitter Breakdown (Max): 480 V
Power - Max: 300 W
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1743 шт:
термін постачання 21-31 дні (днів)
1+318.32 грн
10+ 257.47 грн
100+ 208.29 грн
ISL9V5045S3ST-F085C onsemi ISL9V5045S3ST_F085C_D-3150123.pdf IGBT Transistors IGBT, 450V, 43A, 1.25V, 500mJ, D2PAKEcoSPARK I, N-Channel Ignition 450V 500mJ EcoSPARK 1 Ignition IGBT
на замовлення 800 шт:
термін постачання 280-289 дні (днів)
2+255.74 грн
10+ 211.6 грн
25+ 173.37 грн
100+ 148.79 грн
250+ 140.16 грн
500+ 132.19 грн
800+ 112.92 грн
Мінімальне замовлення: 2
ISL9V3040D3ST-F085C ON Semiconductor isl9v3040-f085c-d.pdf
на замовлення 4720 шт:
термін постачання 14-28 дні (днів)
HUF76633S3ST-F085
Код товару: 132414 		HUF76633S3ST_F085.pdf Транзистори > Польові N-канальні
товар відсутній
HUF76419S3ST-F085 HUF76419S3ST-F085 ON Semiconductor huf76419s_f085-d.pdf Trans MOSFET N-CH 60V 29A Automotive 3-Pin(2+Tab) D2PAK T/R
товар відсутній
HUF76419S3ST-F085 HUF76419S3ST-F085 onsemi Description: MOSFET N-CH 60V 29A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 29A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
Qualification: AEC-Q101
товар відсутній
HUF76629D3ST-F085 HUF76629D3ST-F085 onsemi huf76629d3s-d.pdf Description: MOSFET N-CH 100V 20A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
HUF76629D3ST-F085 HUF76629D3ST-F085 ON Semiconductor huf76629d_f085.pdf Trans MOSFET N-CH 100V 20A Automotive 3-Pin(2+Tab) D2PAK T/R
товар відсутній
HUF76633S3ST-F085 HUF76633S3ST-F085 ON Semiconductor 2huf76633s_f085.pdf Trans MOSFET N-CH 100V 39A Automotive 3-Pin(2+Tab) D2PAK T/R
товар відсутній
HUF76633S3ST-F085 HUF76633S3ST-F085 onsemi HUF76633S3ST_F085.pdf Description: MOSFET N-CH 100V 39A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 39A, 10V
Power Dissipation (Max): 183W (Tj)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 25 V
Qualification: AEC-Q101
товар відсутній
HUF76633S3ST-F085 HUF76633S3ST-F085 onsemi HUF76633S3ST_F085.pdf Description: MOSFET N-CH 100V 39A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 39A, 10V
Power Dissipation (Max): 183W (Tj)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 25 V
Qualification: AEC-Q101
товар відсутній
HUF76639S3ST-F085 HUF76639S3ST-F085 onsemi huf76639s3s-d.pdf Description: MOSFET N CH 100V 51A TO-263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 51A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
товар відсутній
HUF76639S3ST-F085 HUF76639S3ST-F085 onsemi huf76639s3s-d.pdf Description: MOSFET N CH 100V 51A TO-263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 51A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
товар відсутній
HUFA75639S3ST-F085A HUFA75639S3ST-F085A onsemi hufa75639s3s-d.pdf Description: MOSFET N-CH 100V 56A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 56A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Qualification: AEC-Q101
товар відсутній
HUFA76407DK8T-F085 HUFA76407DK8T-F085 ON Semiconductor huf76407dk_f085-d.pdf Trans MOSFET N-CH 60V 3.8A Automotive 8-Pin SOIC T/R
товар відсутній
HUFA76407DK8T-F085 HUFA76407DK8T-F085 onsemi huf76407dk_f085-d.pdf Description: MOSFET 2N-CH 60V 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 60V
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
HUFA76407DK8TF085P HUFA76407DK8TF085P onsemi Description: MOSFET 2N-CH 60V 3.8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.8A, 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
товар відсутній
HUFA76413DK8T-F085 HUFA76413DK8T-F085 ON Semiconductor huf76413dk_f085-d.pdf Trans MOSFET N-CH Si 60V 5.1A Automotive 8-Pin SOIC T/R
товар відсутній
HUFA76413DK8T-F085 HUFA76413DK8T-F085 onsemi HUFA76413DK8T-F085.pdf Description: MOSFET 2N-CH 60V 5.1A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.1A
Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V
Rds On (Max) @ Id, Vgs: 49mOhm @ 5.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
HUFA76413DK8T-F085 ON Semiconductor huf76413dk_f085-d.pdf Trans MOSFET N-CH Si 60V 5.1A Automotive 8-Pin SOIC T/R
товар відсутній
HUFA76413DK8T-F085P HUFA76413DK8T-F085P onsemi Description: MOSFET 2N-CH 60V 5.1A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V
Rds On (Max) @ Id, Vgs: 49mOhm @ 5.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
HUFA76429D3ST-F085 HUFA76429D3ST-F085 ON Semiconductor huf76429d-f085jp-d.pdf Trans MOSFET N-CH 60V 20A Automotive 3-Pin(2+Tab) DPAK T/R
товар відсутній
HUFA76429D3ST-F085 HUFA76429D3ST-F085 onsemi Description: MOSFET N-CH 60V 20A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 25 V
товар відсутній
HUFA76645S3ST-F085 HUFA76645S3ST-F085 ON Semiconductor huf76645s-f085jp-d.pdf Trans MOSFET N-CH 100V 75A Automotive 3-Pin(2+Tab) D2PAK T/R
товар відсутній
HUFA76645S3ST-F085 HUFA76645S3ST-F085 onsemi huf76645s-f085-d.pdf Description: MOSFET N-CH 100V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 75A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
Qualification: AEC-Q101
товар відсутній
ISL9V2040S3ST-F085C ISL9V2040S3ST-F085C onsemi ISL9V3040_F085C_D-3235522.pdf IGBT Transistors ECOSPARK1 IGN-IGBT TO263
товар відсутній
ISL9V3036S3ST-F085C ISL9V3036S3ST-F085C onsemi Description: IGBT 360V 21A TO263
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Reverse Recovery Time (trr): 2.1 µs
Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 6A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 700ns/4.8µs
Gate Charge: 17 nC
Grade: Automotive
Current - Collector (Ic) (Max): 21 A
Voltage - Collector Emitter Breakdown (Max): 360 V
Power - Max: 150 W
Qualification: AEC-Q101
товар відсутній
ISL9V3040D3ST-F085C ISL9V3040D3ST-F085C ON Semiconductor isl9v3040-f085c-d.pdf IGBT Chip, N-Channel Ignition
товар відсутній
ISL9V3040S3ST-F085C ISL9V3040S3ST-F085C onsemi isl9v3040-f085c-d.pdf Description: ECOSPARK1 IGN-IGBT TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Logic
Reverse Recovery Time (trr): 2.1 µs
Vce(on) (Max) @ Vge, Ic: 1.65V @ 4V, 6A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 700ns/4.8µs
Test Condition: 14V, 1Ohm
Gate Charge: 17 nC
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 21 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 150 W
Qualification: AEC-Q101
товар відсутній
ISL9V3040S3ST-F085C ISL9V3040S3ST-F085C onsemi isl9v3040-f085c-d.pdf Description: ECOSPARK1 IGN-IGBT TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Logic
Reverse Recovery Time (trr): 2.1 µs
Vce(on) (Max) @ Vge, Ic: 1.65V @ 4V, 6A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 700ns/4.8µs
Test Condition: 14V, 1Ohm
Gate Charge: 17 nC
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 21 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 150 W
Qualification: AEC-Q101
товар відсутній
ISL9V3040S3ST-F085C ISL9V3040S3ST-F085C ON Semiconductor isl9v3040-f085c-d.pdf IGBT Chip, N-Channel Ignition
товар відсутній
ISL9V5045S3ST-F085 ISL9V5045S3ST-F085 ON Semiconductor isl9v5045s-f085jp-d.pdf Trans IGBT Chip N-CH 445V 51A 300000mW Automotive 3-Pin(2+Tab) D2PAK T/R
товар відсутній
ISL9V5045S3ST-F085C ISL9V5045S3ST-F085C onsemi isl9v5045s3st-f085c-d.pdf Description: ECOSPARK1 IGN-IGBT TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 10A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: -/10.8µs
Gate Charge: 32 nC
Part Status: Active
Current - Collector (Ic) (Max): 51 A
Voltage - Collector Emitter Breakdown (Max): 480 V
Power - Max: 300 W
товар відсутній
ISL9V5045S3ST-F085C ISL9V5045S3ST-F085C onsemi isl9v5045s3st-f085c-d.pdf Description: ECOSPARK1 IGN-IGBT TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 10A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: -/10.8µs
Gate Charge: 32 nC
Current - Collector (Ic) (Max): 51 A
Voltage - Collector Emitter Breakdown (Max): 480 V
Power - Max: 300 W
товар відсутній
ISL9V5045S3ST-F085C ON Semiconductor isl9v5045s3st-f085c-d.pdf IGBT, 450V, 43A, 1.25V, 500mJ Automotive AEC-Q101
товар відсутній
FDD4243-F085 FDD4243-F085 onsemi fdd4243_f085-d.pdf Description: MOSFET P-CH 40V 6.7A/14A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta), 14A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 6.7A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
FDD4243-F085 FDD4243-F085 onsemi fdd4243_f085-d.pdf Description: MOSFET P-CH 40V 6.7A/14A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta), 14A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 6.7A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 20 V
Qualification: AEC-Q101
товар відсутній
FDS2672-F085 FDS2672-F085 onsemi fds2672_f085-d.pdf Description: MOSFET N-CH 200V 3.9A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.9A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2535 pF @ 100 V
Qualification: AEC-Q101
товар відсутній
HUFA75639S3ST-F085A FAIRS31838-1.pdf?t.download=true&u=5oefqw
HUFA75639S3ST-F085A
Виробник: Fairchild Semiconductor
Description: MOSFET N-CH 100V 56A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 56A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
на замовлення 497 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
270+74.68 грн
Мінімальне замовлення: 270
HUFA76407DK8T-F085 huf76407dk_f085-d.pdf
HUFA76407DK8T-F085
Виробник: onsemi
Description: MOSFET 2N-CH 60V 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 60V
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+112.81 грн
10+ 90.57 грн
100+ 72.09 грн
500+ 57.25 грн
1000+ 48.57 грн
Мінімальне замовлення: 3
HUFA76407DK8T-F085 HUF76407DK_F085_D-2314593.pdf
HUFA76407DK8T-F085
Виробник: onsemi / Fairchild
MOSFET 60V Dual N-Channel LogicLevel PwrMOSFET
на замовлення 2500 шт:
термін постачання 147-156 дні (днів)
Кількість Ціна без ПДВ
3+120.89 грн
10+ 98.54 грн
100+ 68.42 грн
250+ 63.04 грн
500+ 57.59 грн
1000+ 49.29 грн
2500+ 46.83 грн
Мінімальне замовлення: 3
HUFA76645S3ST-F085 HUF76645S_F085_D-2314284.pdf
HUFA76645S3ST-F085
Виробник: onsemi / Fairchild
MOSFET 100V 75A 0.015ohm N-CH
на замовлення 8 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+264.26 грн
10+ 218.47 грн
25+ 180.01 грн
100+ 154.11 грн
250+ 145.47 грн
500+ 136.84 грн
800+ 116.91 грн
Мінімальне замовлення: 2
ISL9V3040D3ST-F085C ISL9V3040_F085C_D-2314506.pdf
ISL9V3040D3ST-F085C
Виробник: onsemi
IGBT Transistors IGBT, N-Channel Ignition, DPAK, 17A, 1.58V, 300mJ EcoSPARK I IGBT, N-Channel Ignition, DPAK, 17A, 1.58V, 300mJ EcoSPARK? I
на замовлення 4647 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
3+128.64 грн
10+ 106.18 грн
100+ 73.73 грн
250+ 70.41 грн
500+ 61.31 грн
1000+ 52.54 грн
2500+ 49.89 грн
Мінімальне замовлення: 3
ISL9V3040D3ST-F085C isl9v3040-f085c-d.pdf
ISL9V3040D3ST-F085C
Виробник: onsemi
Description: ECOSPARK1 IGN-IGBT TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Reverse Recovery Time (trr): 7 µs
Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 6A
Supplier Device Package: TO-252 (DPAK)
Td (on/off) @ 25°C: -/4µs
Test Condition: 300V, 1000Ohm, 5V
Gate Charge: 17 nC
Part Status: Active
Current - Collector (Ic) (Max): 21 A
Voltage - Collector Emitter Breakdown (Max): 430 V
Power - Max: 150 W
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+54.36 грн
Мінімальне замовлення: 2500
ISL9V3040D3ST-F085C isl9v3040-f085c-d.pdf
ISL9V3040D3ST-F085C
Виробник: onsemi
Description: ECOSPARK1 IGN-IGBT TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Reverse Recovery Time (trr): 7 µs
Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 6A
Supplier Device Package: TO-252 (DPAK)
Td (on/off) @ 25°C: -/4µs
Test Condition: 300V, 1000Ohm, 5V
Gate Charge: 17 nC
Part Status: Active
Current - Collector (Ic) (Max): 21 A
Voltage - Collector Emitter Breakdown (Max): 430 V
Power - Max: 150 W
на замовлення 6454 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+120.72 грн
10+ 96.39 грн
100+ 76.75 грн
500+ 60.94 грн
1000+ 51.71 грн
Мінімальне замовлення: 3
ISL9V3040S3ST-F085C ISL9V3040_F085C_D-2314506.pdf
ISL9V3040S3ST-F085C
Виробник: onsemi
IGBT Transistors ECOSPARK1 IGN-IGBT
на замовлення 3104 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+199.94 грн
10+ 158.13 грн
100+ 112.92 грн
500+ 109.6 грн
800+ 81.7 грн
2400+ 77.05 грн
4800+ 73.07 грн
Мінімальне замовлення: 2
ISL9V5045S3ST-F085 isl9v5045s-f085-d.pdf
ISL9V5045S3ST-F085
Виробник: onsemi
Description: IGBT 480V 51A 300W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 10A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: -/10.8µs
Test Condition: 300V, 1kOhm, 5V
Gate Charge: 32 nC
Part Status: Active
Current - Collector (Ic) (Max): 51 A
Voltage - Collector Emitter Breakdown (Max): 480 V
Power - Max: 300 W
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
800+192.27 грн
1600+ 158.54 грн
Мінімальне замовлення: 800
ISL9V5045S3ST-F085 ISL9V5045S_F085_D-2314597.pdf
ISL9V5045S3ST-F085
Виробник: onsemi / Fairchild
IGBT Transistors 500mJ, 450V EcoSPARK N-Chan Ignition IGBT
на замовлення 6254 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+340.99 грн
10+ 282.64 грн
100+ 198.61 грн
800+ 150.79 грн
ISL9V5045S3ST-F085 isl9v5045s-f085-d.pdf
ISL9V5045S3ST-F085
Виробник: onsemi
Description: IGBT 480V 51A 300W D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 10A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: -/10.8µs
Test Condition: 300V, 1kOhm, 5V
Gate Charge: 32 nC
Part Status: Active
Current - Collector (Ic) (Max): 51 A
Voltage - Collector Emitter Breakdown (Max): 480 V
Power - Max: 300 W
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1743 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+318.32 грн
10+ 257.47 грн
100+ 208.29 грн
ISL9V5045S3ST-F085C ISL9V5045S3ST_F085C_D-3150123.pdf
Виробник: onsemi
IGBT Transistors IGBT, 450V, 43A, 1.25V, 500mJ, D2PAKEcoSPARK I, N-Channel Ignition 450V 500mJ EcoSPARK 1 Ignition IGBT
на замовлення 800 шт:
термін постачання 280-289 дні (днів)
Кількість Ціна без ПДВ
2+255.74 грн
10+ 211.6 грн
25+ 173.37 грн
100+ 148.79 грн
250+ 140.16 грн
500+ 132.19 грн
800+ 112.92 грн
Мінімальне замовлення: 2
ISL9V3040D3ST-F085C isl9v3040-f085c-d.pdf
Виробник: ON Semiconductor
на замовлення 4720 шт:
термін постачання 14-28 дні (днів)
HUF76633S3ST-F085
Код товару: 132414		 HUF76633S3ST_F085.pdf
Транзистори > Польові N-канальні
товар відсутній
HUF76419S3ST-F085 huf76419s_f085-d.pdf
HUF76419S3ST-F085
Виробник: ON Semiconductor
Trans MOSFET N-CH 60V 29A Automotive 3-Pin(2+Tab) D2PAK T/R
товар відсутній
HUF76419S3ST-F085
HUF76419S3ST-F085
Виробник: onsemi
Description: MOSFET N-CH 60V 29A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 29A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
Qualification: AEC-Q101
товар відсутній
HUF76629D3ST-F085 huf76629d3s-d.pdf
HUF76629D3ST-F085
Виробник: onsemi
Description: MOSFET N-CH 100V 20A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
HUF76629D3ST-F085 huf76629d_f085.pdf
HUF76629D3ST-F085
Виробник: ON Semiconductor
Trans MOSFET N-CH 100V 20A Automotive 3-Pin(2+Tab) D2PAK T/R
товар відсутній
HUF76633S3ST-F085 2huf76633s_f085.pdf
HUF76633S3ST-F085
Виробник: ON Semiconductor
Trans MOSFET N-CH 100V 39A Automotive 3-Pin(2+Tab) D2PAK T/R
товар відсутній
HUF76633S3ST-F085 HUF76633S3ST_F085.pdf
HUF76633S3ST-F085
Виробник: onsemi
Description: MOSFET N-CH 100V 39A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 39A, 10V
Power Dissipation (Max): 183W (Tj)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 25 V
Qualification: AEC-Q101
товар відсутній
HUF76633S3ST-F085 HUF76633S3ST_F085.pdf
HUF76633S3ST-F085
Виробник: onsemi
Description: MOSFET N-CH 100V 39A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 39A, 10V
Power Dissipation (Max): 183W (Tj)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 25 V
Qualification: AEC-Q101
товар відсутній
HUF76639S3ST-F085 huf76639s3s-d.pdf
HUF76639S3ST-F085
Виробник: onsemi
Description: MOSFET N CH 100V 51A TO-263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 51A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
товар відсутній
HUF76639S3ST-F085 huf76639s3s-d.pdf
HUF76639S3ST-F085
Виробник: onsemi
Description: MOSFET N CH 100V 51A TO-263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 51A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
товар відсутній
HUFA75639S3ST-F085A hufa75639s3s-d.pdf
HUFA75639S3ST-F085A
Виробник: onsemi
Description: MOSFET N-CH 100V 56A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 56A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Qualification: AEC-Q101
товар відсутній
HUFA76407DK8T-F085 huf76407dk_f085-d.pdf
HUFA76407DK8T-F085
Виробник: ON Semiconductor
Trans MOSFET N-CH 60V 3.8A Automotive 8-Pin SOIC T/R
товар відсутній
HUFA76407DK8T-F085 huf76407dk_f085-d.pdf
HUFA76407DK8T-F085
Виробник: onsemi
Description: MOSFET 2N-CH 60V 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 60V
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
HUFA76407DK8TF085P
HUFA76407DK8TF085P
Виробник: onsemi
Description: MOSFET 2N-CH 60V 3.8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.8A, 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
товар відсутній
HUFA76413DK8T-F085 huf76413dk_f085-d.pdf
HUFA76413DK8T-F085
Виробник: ON Semiconductor
Trans MOSFET N-CH Si 60V 5.1A Automotive 8-Pin SOIC T/R
товар відсутній
HUFA76413DK8T-F085 HUFA76413DK8T-F085.pdf
HUFA76413DK8T-F085
Виробник: onsemi
Description: MOSFET 2N-CH 60V 5.1A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.1A
Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V
Rds On (Max) @ Id, Vgs: 49mOhm @ 5.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
HUFA76413DK8T-F085 huf76413dk_f085-d.pdf
Виробник: ON Semiconductor
Trans MOSFET N-CH Si 60V 5.1A Automotive 8-Pin SOIC T/R
товар відсутній
HUFA76413DK8T-F085P
HUFA76413DK8T-F085P
Виробник: onsemi
Description: MOSFET 2N-CH 60V 5.1A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V
Rds On (Max) @ Id, Vgs: 49mOhm @ 5.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
HUFA76429D3ST-F085 huf76429d-f085jp-d.pdf
HUFA76429D3ST-F085
Виробник: ON Semiconductor
Trans MOSFET N-CH 60V 20A Automotive 3-Pin(2+Tab) DPAK T/R
товар відсутній
HUFA76429D3ST-F085
HUFA76429D3ST-F085
Виробник: onsemi
Description: MOSFET N-CH 60V 20A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 25 V
товар відсутній
HUFA76645S3ST-F085 huf76645s-f085jp-d.pdf
HUFA76645S3ST-F085
Виробник: ON Semiconductor
Trans MOSFET N-CH 100V 75A Automotive 3-Pin(2+Tab) D2PAK T/R
товар відсутній
HUFA76645S3ST-F085 huf76645s-f085-d.pdf
HUFA76645S3ST-F085
Виробник: onsemi
Description: MOSFET N-CH 100V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 75A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
Qualification: AEC-Q101
товар відсутній
ISL9V2040S3ST-F085C ISL9V3040_F085C_D-3235522.pdf
ISL9V2040S3ST-F085C
Виробник: onsemi
IGBT Transistors ECOSPARK1 IGN-IGBT TO263
товар відсутній
ISL9V3036S3ST-F085C
ISL9V3036S3ST-F085C
Виробник: onsemi
Description: IGBT 360V 21A TO263
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Reverse Recovery Time (trr): 2.1 µs
Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 6A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 700ns/4.8µs
Gate Charge: 17 nC
Grade: Automotive
Current - Collector (Ic) (Max): 21 A
Voltage - Collector Emitter Breakdown (Max): 360 V
Power - Max: 150 W
Qualification: AEC-Q101
товар відсутній
ISL9V3040D3ST-F085C isl9v3040-f085c-d.pdf
ISL9V3040D3ST-F085C
Виробник: ON Semiconductor
IGBT Chip, N-Channel Ignition
товар відсутній
ISL9V3040S3ST-F085C isl9v3040-f085c-d.pdf
ISL9V3040S3ST-F085C
Виробник: onsemi
Description: ECOSPARK1 IGN-IGBT TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Logic
Reverse Recovery Time (trr): 2.1 µs
Vce(on) (Max) @ Vge, Ic: 1.65V @ 4V, 6A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 700ns/4.8µs
Test Condition: 14V, 1Ohm
Gate Charge: 17 nC
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 21 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 150 W
Qualification: AEC-Q101
товар відсутній
ISL9V3040S3ST-F085C isl9v3040-f085c-d.pdf
ISL9V3040S3ST-F085C
Виробник: onsemi
Description: ECOSPARK1 IGN-IGBT TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Logic
Reverse Recovery Time (trr): 2.1 µs
Vce(on) (Max) @ Vge, Ic: 1.65V @ 4V, 6A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 700ns/4.8µs
Test Condition: 14V, 1Ohm
Gate Charge: 17 nC
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 21 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 150 W
Qualification: AEC-Q101
товар відсутній
ISL9V3040S3ST-F085C isl9v3040-f085c-d.pdf
ISL9V3040S3ST-F085C
Виробник: ON Semiconductor
IGBT Chip, N-Channel Ignition
товар відсутній
ISL9V5045S3ST-F085 isl9v5045s-f085jp-d.pdf
ISL9V5045S3ST-F085
Виробник: ON Semiconductor
Trans IGBT Chip N-CH 445V 51A 300000mW Automotive 3-Pin(2+Tab) D2PAK T/R
товар відсутній
ISL9V5045S3ST-F085C isl9v5045s3st-f085c-d.pdf
ISL9V5045S3ST-F085C
Виробник: onsemi
Description: ECOSPARK1 IGN-IGBT TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 10A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: -/10.8µs
Gate Charge: 32 nC
Part Status: Active
Current - Collector (Ic) (Max): 51 A
Voltage - Collector Emitter Breakdown (Max): 480 V
Power - Max: 300 W
товар відсутній
ISL9V5045S3ST-F085C isl9v5045s3st-f085c-d.pdf
ISL9V5045S3ST-F085C
Виробник: onsemi
Description: ECOSPARK1 IGN-IGBT TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 10A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: -/10.8µs
Gate Charge: 32 nC
Current - Collector (Ic) (Max): 51 A
Voltage - Collector Emitter Breakdown (Max): 480 V
Power - Max: 300 W
товар відсутній
ISL9V5045S3ST-F085C isl9v5045s3st-f085c-d.pdf
Виробник: ON Semiconductor
IGBT, 450V, 43A, 1.25V, 500mJ Automotive AEC-Q101
товар відсутній
FDD4243-F085 fdd4243_f085-d.pdf
FDD4243-F085
Виробник: onsemi
Description: MOSFET P-CH 40V 6.7A/14A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta), 14A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 6.7A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
FDD4243-F085 fdd4243_f085-d.pdf
FDD4243-F085
Виробник: onsemi
Description: MOSFET P-CH 40V 6.7A/14A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta), 14A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 6.7A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 20 V
Qualification: AEC-Q101
товар відсутній
FDS2672-F085 fds2672_f085-d.pdf
FDS2672-F085
Виробник: onsemi
Description: MOSFET N-CH 200V 3.9A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.9A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2535 pF @ 100 V
Qualification: AEC-Q101
товар відсутній